Philips PHB69N03T Datasheet
Philips Semiconductors Product specification
TrenchMOS transistor PHB69N03T
Standard level FET
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope V
suitable for surface mounting using I
’trench’ technology. The device P
featuresverylow on-state resistance T
and has integral zener diodes giving R
DS
D
tot
j
DS(ON)
ESD protection up to 2kV. It is resistance VGS = 10 V
intended for use in DC-DC
converters and general purpose
switching applications.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
Drain-source voltage 30 V
Drain current (DC) 69 A
Total power dissipation 125 W
Junction temperature 175 ˚C
Drain-source on-state 14 mΩ
PIN DESCRIPTION
mb
d
1 gate
2 drain
3 source
mb drain
2
13
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
±V
I
D
I
D
I
DM
P
T
DS
DGR
tot
stg
GS
, T
j
Drain-source voltage - - 30 V
Drain-gate voltage RGS = 20 kΩ -30V
Gate-source voltage - - 20 V
Drain current (DC) Tmb = 25 ˚C - 69 A
Drain current (DC) Tmb = 100 ˚C - 48 A
Drain current (pulse peak value) Tmb = 25 ˚C - 240 A
Total power dissipation Tmb = 25 ˚C - 125 W
Storage & operating temperature - - 55 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to - - 1.2 K/W
mounting base
R
th j-a
Thermal resistance junction to minimum footprint, FR4 50 - K/W
ambient board
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
December 1997 1 Rev 1.200
Electrostatic discharge capacitor Human body model - 2 kV
voltage, all pins (100 pF, 1.5 kΩ)
Philips Semiconductors Product specification
TrenchMOS transistor PHB69N03T
Standard level FET
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
±V
R
DS(ON)
(BR)GSS
Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 30 - - V
voltage Tj = -55˚C 27 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2.0 3.0 4.0 V
Tj = 175˚C 1.0 - - V
Tj = -55˚C - - 4.4 V
Zero gate voltage drain current VDS = 30 V; VGS = 0 V; - 0.05 10 µA
Tj = 175˚C - - 500 µA
Gate source leakage current VGS = ±10 V; VDS = 0 V - 0.02 1 µA
Tj = 175˚C - - 20 µA
Gate-source breakdown IG = ±1 mA; 16 - - V
voltage
Drain-source on-state VGS = 10 V; ID = 25 A - 12 14 mΩ
resistance Tj = 175˚C - - 26 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
Q
Q
Q
C
C
C
t
t
t
t
L
L
fs
g(tot)
gs
gd
iss
oss
rss
d on
r
d off
f
d
d
Forward transconductance VDS = 25 V; ID = 25 A 9 18 - S
Total gate charge ID = 69 A; V
= 24 V; VGS = 10 V - 38 - nC
DD
Gate-source charge - 7 - nC
Gate-drain (Miller) charge - 14 - nC
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1500 2000 pF
Output capacitance - 480 550 pF
Feedback capacitance - 220 300 pF
Turn-on delay time VDD = 25 V; ID = 25 A; - 22 35 ns
Turn-on rise time VGS = 10 V; RG = 5 Ω - 3060ns
Turn-off delay time Resistive load - 40 50 ns
Turn-off fall time - 25 38 ns
Internal drain inductance Measured from tab to centre of die - 3.5 - nH
Internal drain inductance Measured from drain lead solder - 4.5 - nH
point to centre of die
L
s
Internal source inductance Measured from source lead solder - 7.5 - nH
point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
Continuous reverse drain - - 69 A
current
I
DRM
V
SD
Pulsed reverse drain current - - 240 A
Diode forward voltage IF = 25 A; VGS = 0 V - 0.95 1.2 V
IF = 69 A; VGS = 0 V - 1.0 - V
t
rr
Q
rr
Reverse recovery time IF = 69 A; -dIF/dt = 100 A/µs; - 60 - ns
Reverse recovery charge VGS = -10 V; VR = 25 V - 0.1 - µC
December 1997 2 Rev 1.200
Philips Semiconductors Product specification
TrenchMOS transistor PHB69N03T
Standard level FET
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Drain-source non-repetitive ID = 36 A; VDD ≤ 15 V; - - 125 mJ
unclamped inductive turn-off VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C
energy
December 1997 3 Rev 1.200
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