Philips Semiconductors Product specification
PowerMOS transistors |
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PHP4N60E, PHB4N60E |
Avalanche energy rated |
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FEATURES |
SYMBOL |
QUICK REFERENCE DATA |
•Repetitive Avalanche Rated
•Fast switching
•Stable off-state characteristics
•High thermal cycling performance
•Low thermal resistance
d
VDSS = 600 V
ID = 4.5 A
g
RDS(ON) ≤ 2.5 Ω
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
The PHP4N60E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB4N60E is supplied in the SOT404 surface mounting package.
PINNING |
SOT78 (TO220AB) |
SOT404 |
PIN DESCRIPTION
tab
1gate
2drain 1
3source tab drain
1 2 3
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tab |
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2 |
1 |
3 |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VDSS |
Drain-source voltage |
Tj = 25 ˚C to 150˚C |
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600 |
V |
VDGR |
Drain-gate voltage |
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ |
- |
600 |
V |
VGS |
Gate-source voltage |
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± 30 |
V |
ID |
Continuous drain current |
Tmb = 25 ˚C; VGS = 10 V |
- |
4.5 |
A |
IDM |
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Tmb = 100 ˚C; VGS = 10 V |
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2.9 |
A |
Pulsed drain current |
Tmb = 25 ˚C |
- |
18 |
A |
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PD |
Total dissipation |
Tmb = 25 ˚C |
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125 |
W |
Tj, Tstg |
Operating junction and |
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- 55 |
150 |
˚C |
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storage temperature range |
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December 1998 |
1 |
Rev 1.200 |
Philips Semiconductors Product specification
PowerMOS transistors |
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PHP4N60E, PHB4N60E |
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Avalanche energy rated |
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AVALANCHE ENERGY LIMITING VALUES |
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Limiting values in accordance with the Absolute Maximum System (IEC 134) |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
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MAX. |
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UNIT |
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EAS |
Non-repetitive avalanche |
Unclamped inductive load, IAS = 3.2 A; |
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295 |
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mJ |
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energy |
tp = 0.24 ms; Tj prior to avalanche = 25˚C; |
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VDD ≤ 50 V; RGS = 50 |
Ω; VGS = 10 V; refer |
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to fig:17 |
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E |
Repetitive avalanche energy1 |
I |
= 4.5 A; t = 2.5 μs; T |
prior to |
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9 |
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mJ |
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AR |
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AR |
p |
j |
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avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V; |
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IAS, IAR |
Repetitive and non-repetitive |
refer to fig:18 |
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- |
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4.5 |
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A |
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avalanche current |
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THERMAL RESISTANCES |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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Rth j-mb |
Thermal resistance junction |
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1 |
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K/W |
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to mounting base |
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Rth j-a |
Thermal resistance junction |
SOT78 package, in free air |
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60 |
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K/W |
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to ambient |
SOT404 package, pcb mounted, minimum |
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50 |
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K/W |
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footprint |
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1 pulse width and repetition rate limited by Tj max.
December 1998 |
2 |
Rev 1.200 |
Philips Semiconductors Product specification
PowerMOS transistors |
|
PHP4N60E, PHB4N60E |
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Avalanche energy rated |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise specified |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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V(BR)DSS |
Drain-source breakdown |
VGS = 0 V; ID = 0.25 mA |
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600 |
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V |
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voltage |
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V(BR)DSS / |
Drain-source breakdown |
VDS = VGS; ID = 0.25 mA |
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0.1 |
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%/K |
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Tj |
voltage temperature |
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coefficient |
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Ω |
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RDS(ON) |
Drain-source on resistance |
VGS = 10 V; ID = 2.25 A |
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2.1 |
2.5 |
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VGS(TO) |
Gate threshold voltage |
VDS = VGS; ID = 0.25 mA |
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2.0 |
3.0 |
4.0 |
V |
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gfs |
Forward transconductance |
VDS = 30 V; ID = 2.25 A |
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2 |
3.4 |
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S |
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IDSS |
Drain-source leakage current |
VDS = 600 V; VGS = 0 V |
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2 |
100 |
μA |
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IGSS |
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VDS = 480 V; VGS = 0 V; Tj = 125 ˚C |
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50 |
500 |
μA |
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Gate-source leakage current |
VGS = ±30 V; VDS = 0 V |
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10 |
200 |
nA |
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Qg(tot) |
Total gate charge |
ID = 4.5 A; VDD = 480 V; VGS = 10 V |
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48 |
60 |
nC |
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Qgs |
Gate-source charge |
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4 |
6 |
nC |
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Qgd |
Gate-drain (Miller) charge |
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24 |
30 |
nC |
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td(on) |
Turn-on delay time |
VDD = 300 V; RD = 68 Ω; |
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12 |
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ns |
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tr |
Turn-on rise time |
RG = 12 Ω |
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33 |
- |
ns |
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td(off) |
Turn-off delay time |
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82 |
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ns |
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tf |
Turn-off fall time |
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36 |
- |
ns |
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Ld |
Internal drain inductance |
Measured from tab to centre of die |
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3.5 |
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nH |
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Ld |
Internal drain inductance |
Measured from drain lead to centre of die |
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4.5 |
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nH |
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(SOT78 package only) |
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Ls |
Internal source inductance |
Measured from source lead to source |
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7.5 |
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nH |
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bond pad |
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Ciss |
Input capacitance |
VGS = 0 V; VDS = 25 V; f = 1 MHz |
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600 |
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pF |
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Coss |
Output capacitance |
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80 |
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pF |
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Crss |
Feedback capacitance |
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46 |
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pF |
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SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise specified |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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IS |
Continuous source current |
Tmb = 25˚C |
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- |
- |
4.5 |
A |
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(body diode) |
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ISM |
Pulsed source current (body |
Tmb = 25˚C |
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- |
- |
18 |
A |
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diode) |
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VSD |
Diode forward voltage |
IS = 4.5 A; VGS = 0 V |
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1.2 |
V |
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trr |
Reverse recovery time |
IS = 4.5 A; VGS = 0 V; dI/dt = 100 A/μs |
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480 |
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ns |
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Qrr |
Reverse recovery charge |
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- |
4 |
- |
μC |
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December 1998 |
3 |
Rev 1.200 |
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