Philips PHB47NQ10T, PHP47NQ10T Datasheet

1. Description

2. Features

PHP47NQ10T; PHB47NQ10T

N-channel enhancement mode ﬁeld-effect transistor

Rev. 01 — 16 May 2001 Product data

N-channel enhancement mode ﬁeld-effect powertransistorina plastic package using TrenchMOS™1 technology.

Product availability:

PHP47NQ10T in SOT78 (TO-220AB) PHB47NQ10T in SOT404 (D2-PAK).

■ Fast switching

■ Very low on-state resistance.

3. Applications

■ DC to DC converters

■ Switched mode power supplies.

c

4. Pinning information

Table 1: Pinning - SOT78 and SOT404, simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g) 2 drain (d) 3 source (s) mb mounting base;

[1] It is not possible to make connection to pin 2 of the SOT404 package.

c

connected to drain (d)

[1]

12mb3

SOT78 (TO-220AB)

MBK106

mb

2

13

SOT404 (D

MBK116

2

-PAK)

g

MBB076

d

s

1. TrenchMOS is a trademark of Royal Philips Electronics.

Philips Semiconductors

PHP47NQ10T; PHB47NQ10T

N-channel enhancement mode ﬁeld-effect transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V I P T R

DS

D

tot j DSon

drain-source voltage (DC) Tj=25to175°C − 100 V drain current (DC) Tmb=25°C; VGS=10V − 47 A total power dissipation Tmb=25°C − 166 W junction temperature − 175 °C drain-source on-state resistance Tj=25°C; VGS=10V; ID= 25 A 20 28 mΩ

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

Avalanche ruggedness

E

AS

drain-source voltage (DC) Tj=25to175°C − 100 V drain-gate voltage (DC) Tj=25to175°C; RGS=20kΩ−100 V gate-source voltage (DC) −±20 V drain current (DC) Tmb=25°C; VGS=10V

− 47 A

Figure 2 and 3

T

= 100 °C; VGS=10V

mb

− 33 A

Figure 2

peak drain current Tmb=25°C; pulsed; tp≤ 10 µs;

− 187 A

Figure 3

total power dissipation Tmb=25°C; Figure 1 − 166 W storage temperature −55 175 °C operating junction temperature −55 175 °C

source (diode forward) current

Tmb=25°C − 47 A (DC)

peak source (diode forward)

Tmb=25°C; pulsed; tp≤ 10 µs − 187 A current

non-repetitive avalanche energy unclamped inductive load;

= 30 A; tp= 0.1 ms; VDD≤ 25 V;

I

AS

=50Ω; VGS= 5 V; starting

R

GS

=25°C; Figure 4

T

j

− 45 mJ

9397 750 08243

Product data Rev. 01 — 16 May 2001 2 of 14

Philips Semiconductors

PHP47NQ10T; PHB47NQ10T

N-channel enhancement mode ﬁeld-effect transistor

120

P

der

(%)

100

80

60

40

20

0

0 50 100 150 200

P

der

tot

----------------------

P

tot 25 C°()

100%×=

03aa16

T

(oC)

mb

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

tp = 1 µs

10 µs

100 µs

1 ms

10 ms 100ms

003aaa097

VDS (V)

10

3

10

I

D

R

= VDS / I

DSon

(A)

2

10

1

110102

D

D.C.

120

I

der

(%)

100

80

60

40

20

0

0 50 100 150 200

03aa24

T

(oC)

mb

VGS≥ 10 V

I

der

D

------------------ -

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

1

003aaa098

25 oC

tp (ms)

10

2

10

I

AS (A)

10

Tj prior to avalanche = 150 oC

3

1

-3

10

-2

10

-1

10

Tmb=25°C; IDM is single pulse. Unclamped inductive load; VDD≤ 25 V; RGS=50Ω;

VGS= 5 V; starting Tj=25°C and 150 °C.

Fig 3. Safe operating area; continuous and peak drain

currents as a function of drain-source voltage.

9397 750 08243

Fig 4. Non-repetitive avalanche ruggedness current

as a function of pulse duration.

Product data Rev. 01 — 16 May 2001 3 of 14

Philips Semiconductors

PHP47NQ10T; PHB47NQ10T

N-channel enhancement mode ﬁeld-effect transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-mb)

R

th(j-a)

R

th(j-a)

thermal resistance from junction to mounting base

thermal resistance from junction to ambient SOT78 package; vertical in still air. 60 K/W thermal resistance from junction to ambient SOT404 package; mounted on

7.1 Transient thermal impedance

Figure 5 0.9 K/W

50 K/W printed circuit board; minimum footprint.

003aaa099

t

p

δ =

T

t

p

t

T

101

tp (s)

Z

th (j-mb)

(K/W)

10

1

δ =

0.5

0.2

-1

10

0.1

0.05

0.02

-2

-3

-7

10

Single pulse

-6

10

-4

-5

-3

10

P

-1

-2

10

Fig 5. Transient thermal impedance from junction to mounting base as a function of

pulse duration.

9397 750 08243

Product data Rev. 01 — 16 May 2001 4 of 14

Philips Semiconductors

PHP47NQ10T; PHB47NQ10T

N-channel enhancement mode ﬁeld-effect transistor

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source breakdown voltage

V

I

DSS

I

GSS

R

GS(th)

DSon

gate-source threshold voltage ID= 1 mA; VDS=VGS;

drain-source leakage current VGS=0V; VDS= 100 V

gate-source leakage current VDS=0V; VGS= ±20 V − 2 100 nA drain-source on-state

resistance

Dynamic characteristics

Q Q Q C C C t

d(on)

t

r

t

d(off)

t

f

g(tot) gs

gd iss oss rss

total gate charge ID= 40 A; VDD=80V; gate-source charge − 12 − nC gate-drain (Miller) charge − 21 − nC input capacitance VGS=0V; VDS=25V; output capacitance − 315 378 pF reverse transfer capacitance − 187 256 pF turn-on delay time VDD= 30 V; RD= 1.2 Ω; rise time − 70 105 ns turn-off delay time − 83 116 ns fall time − 45 63 ns

Source-drain diode

V

SD

source-drain (diode forward) voltage

t

rr

Q

r

reverse recovery time IS=47A; recovered charge − 0.24 −µC

ID= 250 µA; VGS=0V 100 −−V

Figure 10

=25°C234V

T

j

= 175 °C1−−V

T

j

=25°C − 0.05 10 µA

T

j

= 175 °C −−500 µA

T

j

VGS=10V; ID=25A;

Figure 8 and 9

=25oC − 20 28 mΩ

T

j

= 175 °C −−76 mΩ

T

j

− 66 − nC

=10V;Figure 15

V

GS

− 2320 3100 pF

f = 1 MHz; Figure 13

− 15 23 ns

=10V; RG=10Ω

V

GS

IS= 25 A; VGS=0V;

− 0.85 1.2 V

Figure 14

− 66 − ns

/dt = −100 A/µs;

dI

S

= -10 V; VR=30V

V

GS

9397 750 08243

Product data Rev. 01 — 16 May 2001 5 of 14