Philips PHB36N06E Datasheet
Philips Semiconductors Product specification
PowerMOS transistor PHB36N06E
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope suitable for surface V
mount applications. I
The device is intended for use in P
automotive and general purpose T
switching applications. R
DS
D
tot
j
DS(ON)
PINNING - SOT404 PIN CONFIGURATION SYMBOL
Drain-source voltage 60 V
Drain current (DC) 41 A
Total power dissipation 125 W
Junction temperature 175 ˚C
Drain-source on-state 38 mΩ
resistance
PIN DESCRIPTION
mb
d
1 gate
2 drain
3 source
mb drain
2
13
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
DGR
±VGSGate-source voltage - - 30 V
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain-source voltage - - 60 V
Drain-gate voltage RGS = 20 kΩ -60V
Drain current (DC) Tmb = 25 ˚C - 41 A
Drain current (DC) Tmb = 100 ˚C - 29 A
Drain current (pulse peak value) Tmb = 25 ˚C - 164 A
Total power dissipation Tmb = 25 ˚C - 125 W
Storage temperature - - 55 175 ˚C
Junction temperature - - 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-mb
th j-a
Thermal resistance junction to - - 1.2 K/W
mounting base
Thermal resistance junction to minimum footprint, 50 - K/W
ambient FR4 board (see Fig. 18).
August 1996 1 Rev 1.000
Philips Semiconductors Product specification
PowerMOS transistor PHB36N06E
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
DSS
I
GSS
R
DS(ON)
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
s
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 60 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj = 125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; ID = 20 A - 30 38 mΩ
resistance
Forward transconductance VDS = 25 V; ID = 20 A 7 14 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 900 1600 pF
Output capacitance - 420 600 pF
Feedback capacitance - 160 275 pF
Turn-on delay time VDD = 30 V; ID = 3 A; - 15 30 ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 55 90 ns
Turn-off delay time R
Turn-off fall time - 60 100 ns
= 50 Ω - 75 125 ns
gen
Internal drain inductance Measured from upper edge of drain - 2.5 - nH
tab to centre of die
Internal source inductance Measured from source lead - 7.5 - nH
soldering point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
I
DRM
V
t
rr
Q
SD
rr
Continuous reverse drain - - - 41 A
current
Pulsed reverse drain current - - - 164 A
Diode forward voltage IF = 41 A ; VGS = 0 V - 0.95 2.0 V
Reverse recovery time IF = 41 A; -dIF/dt = 100 A/µs; - 60 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.30 - µC
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Drain-source non-repetitive ID = 41 A ; VDD ≤ 25 V ; - - 100 mJ
unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω
energy
August 1996 2 Rev 1.000
Philips Semiconductors Product specification
PowerMOS transistor PHB36N06E
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
= f(Tmb)
D 25 ˚C
Normalised Current Derating
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Tmb); conditions: VGS ≥ 10 V
D 25 ˚C
Zth(j-mb) K/W
10
D =
1
0.5
0.2
0.1
0.1
0.05
0.02
tp / sec
P
D
0.01
0
0.001
1E-07 1E-05 1E-03 1E-01 1E+01
p
t
T
BUK464-60H
p
t
D =
T
t
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
ID / A
80
70
60
50
40
30
20
10
0
20
15
10
0246810
VDS / V
BUK474-60H
VGS / V = 9
8
7
6
5
Fig.5. Typical output characteristics, Tj = 25 ˚C
ID = f(VDS); parameter V
GS
.
1000
100
ID / A
RDS(ON) = VDS/ID
10
1
1
DC
10 100 1000
VDS / V
BUK464-60H
tp =
10 us
100 us
1 ms
10 ms
100 ms
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
RDS(ON) / Ohm
0.2
5
6
0.15
0.1
0.05
0
0 1020304050607080
7
ID / A
Fig.6. Typical on-state resistance, Tj = 25 ˚C
R
p
= f(ID); parameter V
DS(ON)
8
BUK474-60H
VGS / V =
9
10
20
.
GS
August 1996 3 Rev 1.000
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