Philips PHB30NQ15T, PHP30NQ15T Datasheet
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHP30NQ15T, PHB30NQ15T
FEATURES SYMBOL QUICK REFERENCE DATA
• ’Trench’ technology
• Very low on-state resistance V
d
= 150 V
DSS
• Fast switching
• Low thermal resistance I
g
s
R
DS(ON)
= 29 A
D
≤ 63 mΩ
GENERAL DESCRIPTION
N-channelenhancementmode field-effect power transistor in a plastic envelope using ’trench’ technology. The device
hasverylowon-stateresistance.It isintendedforuse indctodc convertersandgeneralpurposeswitchingapplications.
The PHP30NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB30NQ15T is supplied in the SOT404 (D2PAK) surface mounting package.
PINNING SOT78 (TO220AB) SOT404 (D2PAK)
PIN DESCRIPTION
1 gate
2 drain
1
3 source
tab drain
tab
123
tab
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
Tj, T
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999 1 Rev 1.000
Drain-source voltage Tj = 25 ˚C to 175˚C - 150 V
Drain-gate voltage Tj = 25 ˚C to 175˚C; RGS = 20 kΩ - 150 V
Gate-source voltage - ± 20 V
Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 29 A
Tmb = 100 ˚C; VGS = 10 V - 20 A
Pulsed drain current Tmb = 25 ˚C - 116 A
Total power dissipation Tmb = 25 ˚C - 150 W
Operating junction and - 55 175 ˚C
stg
storage temperature
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHP30NQ15T, PHB30NQ15T
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
AS
I
AS
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
Non-repetitive avalanche Unclamped inductive load, IAS = 26 A; - 502 mJ
energy tp = 0.2 ms; Tj prior to avalanche = 25˚C;
VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:15
Non-repetitive avalanche - 29 A
current
Thermal resistance junction - - 1 K/W
to mounting base
Thermal resistance junction SOT78 in free air - 60 - K/W
to ambient SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
R
DS(ON)
I
GSS
I
DSS
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
s
C
iss
C
oss
C
rss
Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 150 - - V
voltage Tj = -55˚C 133 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2 3 4 V
Tj = 175˚C 1 - - V
Tj = -55˚C - - 6 V
Drain-source on-state VGS = 10 V; ID = 15 A - 60 63 mΩ
resistance Tj = 175˚C - - 176 mΩ
Gate source leakage current VGS = ±10 V; VDS = 0 V - 0.02 100 nA
Zero gate voltage drain VDS = 150 V; VGS = 0 V; - 0.05 10 µA
current Tj = 175˚C - - 500 µA
Total gate charge ID = 30 A; V
= 120 V; VGS = 10 V - 55 - nC
DD
Gate-source charge - 10 - nC
Gate-drain (Miller) charge - 20 - nC
Turn-on delay time VDD = 75 V; RD = 2.7 Ω; - 14 - ns
Turn-on rise time VGS = 10 V; RG = 5.6 Ω -50-ns
Turn-off delay time Resistive load - 48 - ns
Turn-off fall time - 38 - ns
Internal drain inductance Measured tab to centre of die - 3.5 - nH
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 2390 - pF
Output capacitance - 240 - pF
Feedback capacitance - 98 - pF
August 1999 2 Rev 1.000
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHP30NQ15T, PHB30NQ15T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current - - 29 A
(body diode)
Pulsed source current (body - - 116 A
diode)
Diode forward voltage IF = 25 A; VGS = 0 V - 0.9 1.2 V
Reverse recovery time IF = 20 A; -dIF/dt = 100 A/µs; - 105 - ns
Reverse recovery charge VGS = 0 V; VR = 25 V - 0.55 - µC
August 1999 3 Rev 1.000
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