Philips PHB20N06T, PHP20N06T Datasheet

1. Description

2. Features

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Rev. 01 — 22 February 2001 Product speciﬁcation

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHP20N06T in SOT78 (TO-220AB) PHB20N06T in SOT404 (D

■ Very low on-state resistance

■ Fast switching.

2

-PAK).

3. Applications

■ Switched mode power supplies

■ DC to DC converters.

c

4. Pinning information

Table 1: Pinning - SOT78, SOT404, simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g) 2 drain (d) 3 source (s) mb mounting base;

connected to drain (d)

[1] It is not possible to make connection to pin 2 of the SOT404 package.

c

[1]

MBK106

12mb3

mb

2

13

MBK116

SOT78 (TO-220AB) SOT404 (D2-PAK)

g

MBB076

d

s

1. TrenchMOS is a trademark of Royal Philips Electronics.

Philips Semiconductors

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V I P T R

DS

D

tot j DSon

drain-source voltage (DC) Tj=25to175oC − 55 V drain current (DC) Tmb=25°C; VGS=10V − 20.3 A total power dissipation Tmb=25°C − 62 W junction temperature − 175 °C drain-source on-state resistance VGS= 10 V; ID=10A

=25°C6475mΩ

T

j

= 175 °C − 150 mΩ

T

j

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

DR

I

DRM

Avalanche ruggedness

W

DSS

drain-source voltage (DC) − 55 V drain-gate voltage (DC) RGS=20kΩ−55 V gate-source voltage (DC) −±20 V drain current (DC) Tmb=25°C; VGS=10V;

− 20.3 A

Figure 2 and 3

T

= 100 °C; VGS=10V;Figure 2 − 14.3 A

mb

peak drain current Tmb=25°C; pulsed; tp≤ 10 µs;

− 81 A

Figure 3

total power dissipation Tmb=25°C; Figure 1 − 62 W storage temperature −55 +175 °C operating junction temperature −55 +175 °C

reverse drain current (DC) Tmb=25°C − 20.3 A pulsed reverse drain current Tmb=25°C; pulsed; tp≤ 10 µs − 81 A

non-repetitive avalanche energy unclamped inductive load; ID=11A;

≤ 55 V; VGS= 10 V; RGS=50Ω;

V

DS

starting T

mb

=25°C

− 30.3 mJ

9397 750 07894

Product speciﬁcation Rev. 01 — 22 February 2001 2 of 15

Philips Semiconductors

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

120

P

der

(%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175 200

P

der

tot

----------------------

P

tot 25 C°()

100%×=

03aa16

Tmb (oC)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

3

10

I

D

(A)

2

10

1

R

= VDS/ I

DSon

P

δ =

D

t

p

T

120

I

der (%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175 200

03aa24

Tmb (oC)

VGS≥ 4.5 V

I

der

D

------------------ -

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

003aaa043

tp = 10 us

100 us

D.C.

1 ms

10 ms

t

p

-1

10

1 10

t

T

2

VDS (V)

10

Tmb=25°C; IDM single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 07894

Product speciﬁcation Rev. 01 — 22 February 2001 3 of 15

Philips Semiconductors

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-a)

R

th(j-mb)

thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W

mounted on printed circuit board;

50 K/W minimum footprint; SOT404 package

thermal resistance from junction to mounting

Figure 4 2.4 K/W

base

7.1 Transient thermal impedance

003aaa044

t

p

δ =

T

t

p

-1

10

t

T

1

tp (s)

Z

th(j-mb)

(K/W)

10

1

10

-1

-2 10

δ = 0.5

0.2

0.1

0.05

0.02

Single Pulse

-6

P

-5

10

-4

10

-3

10

-2

10

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

9397 750 07894

Product speciﬁcation Rev. 01 — 22 February 2001 4 of 15

Philips Semiconductors

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source breakdown voltage

V

I

DSS

I

GSS

R

GS(th)

DSon

gate-source threshold voltage ID= 1 mA; VDS=VGS;

drain-source leakage current VDS= 55 V; VGS=0V

gate-source leakage current VGS= ±20 V; VDS=0V − 2 100 nA drain-source on-state

resistance

Dynamic characteristics

Q Q Q C C C t

d(on)

t

r

t

d(off)

t

f

L

g(tot) gs

gd iss oss rss

d

s

total gate charge ID= 25 A; VDD=44V; gate-source charge − 3 − nC gate-drain (Miller) charge − 6 − nC input capacitance VGS=0V; VDS=25V; output capacitance − 92 113 pF reverse transfer capacitance − 64 90 pF turn-on delay time VDD= 30 V; RL= 1.2 Ω; rise time − 50 − ns turn-off delay time − 70 − ns fall time − 40 − ns internal drain inductance from drain lead 6 mm from

internal source inductance from source lead to source

ID= 0.25 mA; VGS=0V

=25°C55−−V

T

j

= −55 °C50−−V

T

j

Figure 9

=25°C234V

T

j

= 175 °C1−−V

T

j

= −55 °C −−4.4 V

T

j

=25°C − 0.05 10 µA

T

j

= 175 °C −−500 µA

T

j

VGS=10V; ID=10A;

Figure 7 and 8

=25°C − 64 75 mΩ

T

j

= 175 °C −−150 mΩ

T

j

− 11 − nC

=10V;Figure 14

V

GS

− 320 483 pF

f = 1 MHz; Figure 12

− 10 − ns

=10V; RG=10Ω;

V

GS

− 4.5 − nH

package to centre of die from contact screw on

− 3.5 − nH mounting base to centre of die SOT78

from upper edge of drain

− 2.5 − nH mounting base to centre of die SOT404

− 7.5 − nH bond pad

9397 750 07894

Product speciﬁcation Rev. 01 — 22 February 2001 5 of 15