Philips PHB160N03T Datasheet

M3D166

1. Description

2. Features

PHB160N03T

N-channel enhancement mode field-effect transistor

Rev. 01 — 13 September 2000 Product specification

N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.

Product availability:

PHB160N03T in SOT404 (D2-PAK).

■ TrenchMOS™ technology

■ Very low on-state resistance.

3. Applications

■ DC to DC converters

■ Switched-mode power supplies

■ General purpose switch.

c

4. Pinning information

Table 1: Pinning - SOT404 (D2-PAK), simplified outline and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 drain (d)
3 source (s)
mb connected to drain (d)

[1] It is not possible to make connection to pin 2 of the SOT404 package.

c

[1]

mb

2

13

SOT404 (D

2

-PAK)

MBK116

g

MBB076

d

s

1. TrenchMOS is a trademark of Royal Philips Electronics.

Philips Semiconductors

PHB160N03T

N-channel enhancement mode field-effect transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I
P
T
R

DS

D

tot
j
DSon

drain-source voltage (DC) Tj=25to175oC − 30 V
drain current (DC) Tmb=25oC; VGS= 10V − 75 A
total power dissipation Tmb=25oC − 230 W
junction temperature − 175 °C
drain-source on-state resistance VGS=10V; ID=25A 4.3 5 mΩ

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

Avalanche ruggedness

E

AS

I

AS

drain-source voltage (DC) Tj=25to175oC − 30 V
drain-gate voltage (DC) Tj=25to175oC; RGS=20kΩ− 30 V
gate-source voltage (DC) −±30 V
drain current (DC) Tmb=25°C; VGS=10V;

− 75 A

Figure 2 and 3

T

= 100 °C; VGS=10V;

mb

− 75 A

Figure 2 and 3

peak drain current Tmb=25°C; pulsed; tp≤ 10 µs − 240 A
total power dissipation Tmb=25°C; Figure 1 − 230 W
storage temperature −55 +175 °C
operating junction temperature −55 +175 °C

source (diode forward) current (DC) Tmb=25°C − 75 A
peak source (diode forward) current Tmb=25°C; pulsed; tp≤ 10 µs − 240 A

non-repetitive avalanche energy unclamped inductive load;

= 75 A; tp= 0.1 ms;

I

D

≤ 25 V; RGS=50Ω;

V

DD

= 10 V; starting Tj=25°C

V

GS

non-repetitive avalanche current unclamped inductive load;

≤ 25 V; RGS=50Ω;

V

DD

= 10 V; starting Tj=25°C

V

GS

− 500 mJ

− 75 A

9397 750 07325

Product specification Rev. 01 — 13 September 2000 2 of 13

© Philips Electronics N.V. 2000. All rights reserved.

Philips Semiconductors

PHB160N03T

N-channel enhancement mode field-effect transistor

120

P

der

(%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175 200

P

P

der

tot

----------------------

P

tot 25 C°()

100%×=

03aa16

Tmb (oC)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

3

10

R

= V

DS

/ I

D

DSon

I

D

(A)

2

10

120

I

der

(%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175 200

03ad31

Tmb (oC)

VGS≥ 10 V

I

I

der

D

------------------ -

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

03ad34

tp = 10 µs
100 µs

1 ms

t

P

10

t

p

1

110

p

δ =

T

t

T

DC

10 ms
100ms

VDS (V)

2

10

Tmb=25°C; IDM is single pulse

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 07325

Product specification Rev. 01 — 13 September 2000 3 of 13

© Philips Electronics N.V. 2000. All rights reserved.

Philips Semiconductors

PHB160N03T

N-channel enhancement mode field-effect transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-mb)

R

th(j-a)

thermal resistance from junction to mounting
base

thermal resistance from junction to ambient Mounted on a printed circuit board;

7.1 Transient thermal impedance

Figure 4 0.65 K/W

50 K/W

minimum footprint

03ad20

t

p

δ

=

T

t

-1

10

tp (s)

Z

th(j-mb)

(K/W)

1

δ = 0.5

-1

10

-2

10

-3

10

-7

10

0.2

0.1

0.05

0.02

single pulse

10

P

t

p

T

-6

-5

10

-4

10

-3

10

-2

10

Fig 4. Transient thermal impedance from junction to mounting base as a function of

pulse duration.

9397 750 07325

© Philips Electronics N.V. 2000. All rights reserved.

Product specification Rev. 01 — 13 September 2000 4 of 13