Philips Semiconductors Product specification
N-channel TrenchMOS™ transistor |
PHP12NQ15T, PHB12NQ15T |
|
|||
|
|
|
|
PHD12NQ15T |
|
|
|
|
|
|
|
|
|
|
|
|
|
FEATURES |
SYMBOL |
|
|
QUICK REFERENCE DATA |
|
• 'Trench' technology |
|
|
|
|
|
|
d |
|
VDSS = 150 V |
|
|
• Low on-state resistance |
|
|
|
|
|
• Fast switching |
|
|
|
ID = 12.5 A |
|
• Low thermal resistance |
|
|
|
|
|
|
g |
|
|
RDS(ON) ≤ 200 mΩ |
|
|
|
|
|
|
|
|
|
s |
|
|
|
|
|
|
|
|
|
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB12NQ15T is supplied in the SOT404 (D2PAK) surface mounting package.
The PHD12NQ15T is supplied in the SOT428 (DPAK) surface mounting package.
PINNING |
SOT78 (TO220AB) SOT404 (D2PAK) |
SOT428 (DPAK) |
PIN DESCRIPTION
tab
1gate
2drain 1
3source
1 2 3
tab drain
|
tab |
|
tab |
|
2 |
|
2 |
1 |
3 |
1 |
3 |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
|
|
|
|
|
VDSS |
Drain-source voltage |
Tj = 25 ˚C to 175˚C |
- |
150 |
V |
VDGR |
Drain-gate voltage |
Tj = 25 ˚C to 175˚C; RGS = 20 kΩ |
- |
150 |
V |
VGS |
Gate-source voltage |
|
- |
± 20 |
V |
ID |
Continuous drain current |
Tmb = 25 ˚C; VGS = 10 V |
- |
12.5 |
A |
|
|
Tmb = 100 ˚C; VGS = 10 V |
- |
8.8 |
A |
IDM |
Pulsed drain current |
Tmb = 25 ˚C |
- |
50 |
A |
PD |
Total power dissipation |
Tmb = 25 ˚C |
- |
88 |
W |
Tj, Tstg |
Operating junction and |
|
- 55 |
175 |
˚C |
|
storage temperature |
|
|
|
|
1 It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages.
August 1999 |
1 |
Rev 1.000 |
Philips Semiconductors Product specification
N-channel TrenchMOS™ transistor |
PHP12NQ15T, PHB12NQ15T |
|
||||||||||||
|
|
|
|
|
|
|
PHD12NQ15T |
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|||
AVALANCHE ENERGY LIMITING VALUES |
|
|
|
|
|
|
|
|
|
|
|
|||
Limiting values in accordance with the Absolute Maximum System (IEC 134) |
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
||||||
SYMBOL |
PARAMETER |
CONDITIONS |
|
|
MIN. |
|
MAX. |
|
UNIT |
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|||
EAS |
|
Non-repetitive avalanche |
Unclamped inductive load, IAS = 9.5 A; |
- |
|
|
93 |
|
|
mJ |
|
|||
|
|
energy |
tp = 100 μs; Tj prior to avalanche = 25˚C; |
|
|
|
|
|
|
|
|
|
||
|
|
|
VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer |
|
|
|
|
|
|
|
|
|
||
IAS |
|
Peak non-repetitive |
to fig:15 |
|
|
- |
|
12.5 |
|
|
A |
|
||
|
|
|
|
|
|
|
|
|||||||
|
|
avalanche current |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
THERMAL RESISTANCES |
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
||||||
SYMBOL |
PARAMETER |
CONDITIONS |
|
|
MIN. |
TYP. |
MAX. |
UNIT |
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Rth j-mb |
|
Thermal resistance junction |
|
|
|
- |
- |
|
1.7 |
|
K/W |
|
||
|
|
to mounting base |
|
|
|
|
|
|
|
|
|
|
|
|
Rth j-a |
|
Thermal resistance junction |
SOT78 package, in free air |
|
|
- |
60 |
|
- |
|
|
K/W |
|
|
|
|
to ambient |
SOT404 & SOT428 packages, pcb |
- |
50 |
|
- |
|
|
K/W |
|
|||
|
|
|
mounted, minimum footprint |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ELECTRICAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|||
Tj= 25˚C |
unless otherwise specified |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
SYMBOL |
PARAMETER |
CONDITIONS |
|
|
MIN. |
TYP. |
MAX. |
UNIT |
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
V(BR)DSS |
|
Drain-source breakdown |
VGS = 0 V; ID = 0.25 mA; |
|
|
150 |
- |
|
- |
|
|
V |
|
|
|
|
voltage |
|
Tj = -55˚C |
133 |
- |
|
- |
|
|
V |
|
||
VGS(TO) |
|
Gate threshold voltage |
VDS = VGS; ID = 1 mA |
|
|
2 |
3 |
|
4 |
|
|
V |
|
|
|
|
|
|
Tj |
= 175˚C |
1 |
- |
|
- |
|
|
V |
|
|
|
|
|
|
Tj = -55˚C |
- |
|
|
|
6 |
|
|
V |
|
|
RDS(ON) |
|
Drain-source on-state |
VGS = 10 V; ID = 6 A |
Tj |
|
- |
180 |
|
200 |
|
mΩ |
|
||
|
|
resistance |
VGS = ± 10 V; VDS = 0 V |
= 175˚C |
- |
- |
|
560 |
|
mΩ |
|
|||
IGSS |
|
Gate source leakage current |
|
|
- |
10 |
|
100 |
|
nA |
|
|||
IDSS |
|
Zero gate voltage drain |
VDS = 150 V; VGS = 0 V |
|
|
- |
0.05 |
|
10 |
|
|
μA |
|
|
|
|
current |
|
Tj |
= 175˚C |
- |
- |
|
500 |
|
μA |
|
||
Qg(tot) |
|
Total gate charge |
ID = 12 A; VDD = 120 V; VGS = 10 V |
- |
20 |
|
- |
|
|
nC |
|
|||
Qgs |
|
Gate-source charge |
|
|
|
- |
4.4 |
|
- |
|
|
nC |
|
|
Qgd |
|
Gate-drain (Miller) charge |
|
|
|
- |
8 |
|
- |
|
|
nC |
|
|
td on |
|
Turn-on delay time |
VDD = 75 V; RD = 6.8 Ω; |
|
|
- |
8 |
|
- |
|
|
ns |
|
|
tr |
|
Turn-on rise time |
VGS = 10 V; RG = 5.6 Ω |
|
|
- |
20 |
|
- |
|
|
ns |
|
|
td off |
|
Turn-off delay time |
Resistive load |
|
|
- |
20 |
|
- |
|
|
ns |
|
|
tf |
|
Turn-off fall time |
|
|
|
- |
12 |
|
- |
|
|
ns |
|
|
Ld |
|
Internal drain inductance |
Measured tab to centre of die |
|
|
- |
3.5 |
|
- |
|
|
nH |
|
|
Ld |
|
Internal drain inductance |
Measured from drain lead to centre of die |
- |
4.5 |
|
- |
|
|
nH |
|
|||
|
|
|
(SOT78 package only) |
|
|
|
|
|
|
|
|
|
|
|
Ls |
|
Internal source inductance |
Measured from source lead to source |
- |
7.5 |
|
- |
|
|
nH |
|
|||
|
|
|
bond pad |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Ciss |
|
Input capacitance |
VGS = 0 V; VDS = 25 V; f = 1 MHz |
|
- |
860 |
|
- |
|
|
pF |
|
||
Coss |
|
Output capacitance |
|
|
|
- |
108 |
|
- |
|
|
pF |
|
|
Crss |
|
Feedback capacitance |
|
|
|
- |
57 |
|
- |
|
|
pF |
|
|
August 1999 |
2 |
Rev 1.000 |
Philips Semiconductors Product specification
N-channel TrenchMOS™ transistor |
PHP12NQ15T, PHB12NQ15T |
|
||||||
|
|
|
|
|
PHD12NQ15T |
|
||
|
|
|
|
|
||||
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS |
|
|
|
|
||||
Tj = 25˚C unless otherwise specified |
|
|
|
|
|
|
|
|
SYMBOL |
PARAMETER |
CONDITIONS |
|
MIN. |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
|
|
|
IS |
Continuous source current |
|
|
- |
- |
12.5 |
A |
|
|
(body diode) |
|
|
|
|
|
|
|
ISM |
Pulsed source current (body |
|
|
- |
- |
50 |
A |
|
|
diode) |
|
|
|
|
|
|
|
VSD |
Diode forward voltage |
IF = 12 A; VGS = 0 V |
|
- |
0.86 |
1.2 |
V |
|
trr |
Reverse recovery time |
IF = 12 A; -dIF/dt = 100 A/μs; |
|
- |
95 |
- |
ns |
|
Qrr |
Reverse recovery charge |
VGS = 0 V; VR = 25 V |
|
- |
0.56 |
- |
μC |
|
August 1999 |
3 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
|
N-channel TrenchMOS™ transistor |
PHP12NQ15T, PHB12NQ15T |
|
PHD12NQ15T |
|
|
Normalised Power Derating, PD (%)
100
90
80
70
60
50
40
30
20
10
0
0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
|
|
Mounting Base temperature, Tmb (C) |
|
|
|||
|
Fig.1. |
Normalised power dissipation. |
|
||||
|
PD% = 100×PD/PD 25 ˚C = f(Tmb) |
|
|
||||
Normalised Current Derating, ID (%) |
|
|
|
||||
100 |
|
|
|
|
|
|
|
90 |
|
|
|
|
|
|
|
80 |
|
|
|
|
|
|
|
70 |
|
|
|
|
|
|
|
60 |
|
|
|
|
|
|
|
50 |
|
|
|
|
|
|
|
40 |
|
|
|
|
|
|
|
30 |
|
|
|
|
|
|
|
20 |
|
|
|
|
|
|
|
10 |
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
|
|
Mounting Base temperature, Tmb (C) |
|
|
|||
Fig.2. Normalised continuous drain current. |
|
||||||
|
ID% = 100×ID/ID 25 ˚C = f(Tmb); VGS ³ 10 V |
|
|||||
Peak Pulsed Drain Current, IDM (A)
100 |
|
RDS(on) = VDS/ ID |
|
|
tp = 10 us |
10 |
|
|
100 us |
D.C. |
1 ms |
1 |
10 ms |
|
100 ms |
0.1 |
|
1 |
10 |
100 |
1000 |
Drain-Source Voltage, VDS (V) |
|
||
Fig.3. |
Safe operating area |
|
|
ID & IDM = f(VDS); IDM single pulse; parameter tp
Transient thermal impedance, Zth j-mb (K/W)
10
D = 0.5 |
|
|
|
|
|
|
|
1 |
|
|
|
|
|
|
|
0.2 |
|
|
|
|
|
|
|
0.1 |
|
|
|
|
|
|
|
0.05 |
|
|
|
P |
tp |
D = tp/T |
|
0.1 |
|
|
|
D |
|
|
|
0.02 |
|
|
|
|
|
|
|
|
single pulse |
|
|
T |
|
||
|
|
|
|
|
|
||
0.01 |
|
|
|
|
|
|
|
1E-06 |
1E-05 |
1E-04 |
1E-03 |
1E-02 |
|
1E-01 |
1E+00 |
|
|
Pulse width, tp (s) |
|
|
|
||
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
12 |
Drain Current, ID (A) |
|
|
|
|
|
|
|
||
Tj = 25 C |
|
|
|
|
|
|
VGS = 10V |
|
||
11 |
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
10 |
|
|
|
|
|
|
8 V |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
9 |
|
|
|
|
|
|
|
|
6 V |
|
8 |
|
|
|
|
|
|
|
|
|
|
7 |
|
|
|
|
|
|
|
|
5.5 V |
|
|
|
|
|
|
|
|
|
|
|
|
6 |
|
|
|
|
|
|
|
|
|
|
5 |
|
|
|
|
|
|
|
|
5 V |
|
|
|
|
|
|
|
|
|
|
|
|
4 |
|
|
|
|
|
|
|
|
|
|
3 |
|
|
|
|
|
|
|
|
|
|
2 |
|
|
|
|
|
|
|
|
4.5 V |
|
1 |
|
|
|
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
|
|
|
0 |
0.2 |
0.4 |
0.6 |
0.8 |
1 |
1.2 |
1.4 |
1.6 |
1.8 |
2 |
|
|
|
Drain-Source Voltage, VDS (V) |
|
|
|
||||
Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS)
Drain-Source On Resistance, RDS(on) (Ohms)
0.4 |
|
|
|
|
5 V |
|
|
|
|
Tj = 25 C |
|
|
0.35 |
|
4.4 V |
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
0.3 |
|
|
|
|
|
|
|
|
|
|
|
|
0.25 |
|
|
|
|
|
|
|
5.5 V |
|
|
|
|
|
|
|
|
|
|
|
|
|
6 V |
|
|
|
|
|
|
|
|
|
|
|
|
|
8 V |
|
|
0.2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.15 |
|
|
|
|
|
|
|
|
|
VGS = 10V |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.1 |
|
|
|
|
|
|
|
|
|
|
|
|
0.05 |
|
|
|
|
|
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
|
|
|
|
|
0 |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
9 |
10 |
11 |
12 |
|
|
|
|
Drain Current, ID (A) |
|
|
|
|
|
|||
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID)
August 1999 |
4 |
Rev 1.000 |
Loading...