Philips PHB11N06LT, PHD11N06LT, PHP11N06LT Datasheet

Philips Semiconductors Product specification

N-channel TrenchMOS™ transistor		PHP11N06LT, PHB11N06LT
Logic level FET				PHD11N06LT
FEATURES	SYMBOL			QUICK REFERENCE DATA
• 'Trench' technology	d			VDSS = 55 V
• Low on-state resistance				ID = 10.5 A
• Fast switching
• Logic level compatible				RDS(ON) ≤ 150 mΩ (VGS = 5 V)
	g
	s			RDS(ON) ≤ 130 mΩ (VGS = 10 V)

GENERAL DESCRIPTION

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology.

Applications:-

•d.c. to d.c. converters

•switched mode power supplies

The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.

The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting package.

The PHD11N06LT is supplied in the SOT428 (DPAK) surface mounting package.

PINNING

SOT78 (TO220AB) SOT404 (D2PAK)

SOT428 (DPAK)

PIN DESCRIPTION

tab

1gate

2drain 1

3source

1 2 3

tab drain

	tab		tab
	2		2
1	3	1	3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDSS	Drain-source voltage	Tj = 25 ˚C to 175˚C	-	55	V
VDGR	Drain-gate voltage	Tj = 25 ˚C to 175˚C; RGS = 20 kΩ	-	55	V
VGS	Gate-source voltage		-	± 15	V
VGSM	Pulsed gate-source voltage	Tj ≤ 150˚C	-	± 20	V
ID	Continuous drain current	Tmb = 25 ˚C	-	10.3	A
		Tmb = 100 ˚C	-	7.3	A
IDM	Pulsed drain current	Tmb = 25 ˚C	-	41	A
PD	Total power dissipation	Tmb = 25 ˚C	-	33	W
Tj, Tstg	Operating junction and		- 55	175	˚C
	storage temperature

1 It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages.

August 1999

1

Rev 1.000

Philips Semiconductors Product specification

N-channel TrenchMOS™ transistor

PHP11N06LT, PHB11N06LT

Logic level FET

PHD11N06LT

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

EAS

Non-repetitive avalanche

Unclamped inductive load, IAS = 3.3 A;

-

25

mJ

energy

tp = 220 μs; Tj prior to avalanche = 25˚C;

VDD ≤ 25 V; RGS = 50 Ω; VGS = 5 V; refer to

IAS

Peak non-repetitive

fig:15

-

10.3

A

avalanche current

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Rth j-mb

Thermal resistance junction

-

4.5

K/W

to mounting base

Rth j-a

Thermal resistance junction

SOT78 package, in free air

60

-

K/W

to ambient

SOT428 and SOT404 package, pcb

50

-

K/W

mounted, minimum footprint

ELECTRICAL CHARACTERISTICS

Tj= 25˚C

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

Drain-source breakdown

VGS = 0 V; ID = 0.25 mA;

55

-

-

V

voltage

Tj = -55˚C

50

-

-

V

VGS(TO)

Gate threshold voltage

VDS = VGS; ID = 1 mA

1.0

1.5

2.0

V

Tj

= 175˚C

0.5

-

-

V

Tj = -55˚C

-

-

2.3

V

RDS(ON)

Drain-source on-state

VGS = 10 V; ID = 5.5 A

-

100

130

mΩ

resistance

VGS = 5 V; ID = 5.5 A

-

120

150

mΩ

Tj

= 175˚C

-

250

315

mΩ

gfs

Forward transconductance

VDS = 25 V; ID = 5.5 A

4

7

-

S

IGSS

Gate source leakage current

VGS = ±5 V; VDS = 0 V

-

10

100

nA

IDSS

Zero gate voltage drain

VDS = 55 V; VGS = 0 V;

-

0.05

10

μA

current

Tj

= 175˚C

-

-

500

μA

Qg(tot)

Total gate charge

ID = 10 A; VDD = 44 V; VGS = 5 V

-

5.2

-

nC

Qgs

Gate-source charge

-

1.2

-

nC

Qgd

Gate-drain (Miller) charge

-

3.0

-

nC

td on

Turn-on delay time

VDD = 30 V; RD = 2.7 Ω;

-

6

16

ns

tr

Turn-on rise time

RG = 10 Ω; VGS = 5 V

-

64

80

ns

td off

Turn-off delay time

Resistive load

-

20

30

ns

tf

Turn-off fall time

-

26

40

ns

Ld

Internal drain inductance

Measured from tab to centre of die

-

3.5

-

nH

Ld

Internal drain inductance

Measured from drain lead to centre of die

-

4.5

-

nH

(SOT78 package only)

Ls

Internal source inductance

Measured from source lead to source

-

7.5

-

nH

bond pad

Ciss

Input capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz

-

250

330

pF

Coss

Output capacitance

-

55

75

pF

Crss

Feedback capacitance

-

42

55

pF

August 1999

2

Rev 1.000

Philips Semiconductors Product specification

N-channel TrenchMOS™ transistor			PHP11N06LT, PHB11N06LT
Logic level FET					PHD11N06LT
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
IS	Continuous source current			-	-	10.3	A
	(body diode)
ISM	Pulsed source current (body			-	-	41	A
	diode)
VSD	Diode forward voltage	IF = 10 A; VGS = 0 V		-	1.15	1.5	V
trr	Reverse recovery time	IF = 10 A; -dIF/dt = 100 A/μs;		-	35	-	ns
Qrr	Reverse recovery charge	VGS = 0 V; VR = 30 V		-	55	-	nC

August 1999

3

Rev 1.000

Philips Semiconductors	Product specification
N-channel TrenchMOS™ transistor	PHP11N06LT, PHB11N06LT
Logic level FET	PHD11N06LT

100	Normalised Power Derating, PD (%)
90
80
70
60
50
40
30
20
10
0
0	25	50	75	100	125	150	175
		Mounting Base temperature, Tmb (C)
	Fig.1.	Normalised power dissipation.
	PD% = 100×PD/PD 25 ˚C = f(Tmb)

Normalised Current Derating, ID (%)

100

90

80

70

60

50

40

30

20

10

0

0	25	50	75	100	125	150	175
		Mounting Base temperature, Tmb (C)

Fig.2. Normalised continuous drain current.
ID% = 100×ID/ID 25 ˚C = f(Tmb); conditions: VGS ³ 5 V
100	Peak Pulsed Drain Current, IDM (A)
	RDS(on) = VDS/ ID
	tp = 10 us
10
	100 us
	D.C.
1	1 ms
	10 ms
	100 ms
0.1

1	10	100
	Drain-Source Voltage, VDS (V)
Fig.3.	Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter tp

Transient thermal impedance, Zth j-mb (K/W)

10

D = 0.5
0.2
1
0.1
				P	tp	D = tp/T
0.05				D
0.02
	single pulse				T
0.1
1E-06	1E-05	1E-04	1E-03	1E-02	1E-01		1E+00
		Pulse width, tp (s)

	Fig.4. Transient thermal impedance.
	Zth j-mb = f(t); parameter D = tp/T
15	Drain Current, ID (A)
14	Tj = 25 C	VGS = 10V	5 V
13
12
11
10
9			3.4 V
8
7			3.2 V
6
5			3 V
4
			2.8 V
3
			2.6 V
2
1			2.4 V
0

0	0.2	0.4	0.6	0.8		1	1.2	1.4	1.6	1.8	2
			Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, Tj = 25 ˚C.
				ID = f(VDS)
Drain-Source On Resistance, RDS(on) (Ohms)
0.5			2.8V						Tj = 25 C
0.45		2.6 V
	2.4 V				3 V
0.4
0.35						3.2 V
0.3								3.4 V
0.25
0.2										5 V
0.15
0.1
0.05									VGS = 10V
0
0	1	2	3	4	5	6	7	8	9	10	11
			Drain Current, ID (A)
Fig.6.		Typical on-state resistance, Tj = 25 ˚C.
				RDS(ON) = f(ID)

August 1999

4

Rev 1.000