Philips PHB10N40E, PHP10N40E, PHW10N40E Datasheet
Philips Semiconductors Product specification
PowerMOS transistors PHP10N40E, PHB10N40E, PHW10N40E
Avalanche energy rated
FEATURES SYMBOL QUICK REFERENCE DATA
• Repetitive Avalanche Rated
• Fast switching V
DSS
= 400 V
• Stable off-state characteristics
• High thermal cycling performance I
D
= 10.6 A
• Low thermal resistance
R
DS(ON)
≤ 0.55 Ω
GENERAL DESCRIPTION
N-channel,enhancementmodefield-effect power transistor, intendedforusein off-line switched mode powersupplies,
T.V.andcomputer monitor powersupplies, d.c. to d.c.converters, motor controlcircuitsand general purpose switching
applications.
The PHP10N40E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHW10N40E is supplied in the SOT429 (TO247) conventional leaded package.
The PHB10N40E is supplied in the SOT404 surface mounting package.
PINNING SOT78 (TO220AB) SOT404 SOT429 (TO247)
PIN DESCRIPTION
1 gate
2 drain
1
3 source
tab drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
Drain-source voltage Tj = 25 ˚C to 150˚C - 400 V
V
DGR
Drain-gate voltage Tj = 25 ˚C to 150˚C; RGS = 20 kΩ - 400 V
V
GS
Gate-source voltage - ± 30 V
I
D
Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 10.6 A
Tmb = 100 ˚C; VGS = 10 V - 6.7 A
I
DM
Pulsed drain current Tmb = 25 ˚C - 42 A
P
D
Total dissipation Tmb = 25 ˚C - 147 W
Tj, T
stg
Operating junction and - 55 150 ˚C
storage temperature range
d
g
s
123
tab
13
tab
2
2
3
1
1 It is not possible to make connection to pin 2 of the SOT404 package.
December 1998 1 Rev 1.200
Philips Semiconductors Product specification
PowerMOS transistors PHP10N40E, PHB10N40E, PHW10N40E
Avalanche energy rated
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
AS
Non-repetitive avalanche Unclamped inductive load, IAS = 8.8 A; - 526 mJ
energy tp = 0.23 ms; Tj prior to avalanche = 25˚C;
VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:17
E
AR
Repetitive avalanche energy2IAR = 10.6 A; tp = 2.5 µs; Tj prior to - 13 mJ
avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V;
refer to fig:18
IAS, I
AR
Repetitive and non-repetitive - 10.6 A
avalanche current
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction - - 0.85 K/W
to mounting base
R
th j-a
Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT429 package, in free air - 45 - K/W
SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
2 pulse width and repetition rate limited by Tj max.
December 1998 2 Rev 1.200
Philips Semiconductors Product specification
PowerMOS transistors PHP10N40E, PHB10N40E, PHW10N40E
Avalanche energy rated
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 400 - - V
voltage
∆V
(BR)DSS
/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.1 - %/K
∆T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance VGS = 10 V; ID = 5.3 A - 0.42 0.55 Ω
V
GS(TO)
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
g
fs
Forward transconductance VDS = 30 V; ID = 5.3 A 3.5 6 - S
I
DSS
Drain-source leakage current VDS = 400 V; VGS = 0 V - 1 25 µA
VDS = 320 V; VGS = 0 V; Tj = 125 ˚C - 30 250 µA
I
GSS
Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 200 nA
Q
g(tot)
Total gate charge ID = 10.6 A; V
DD
= 320 V; VGS = 10 V - 90 110 nC
Q
gs
Gate-source charge - 7 9 nC
Q
gd
Gate-drain (Miller) charge - 49 60 nC
t
d(on)
Turn-on delay time VDD = 200 V; RD = 18 Ω; - 13 - ns
t
r
Turn-on rise time RG = 9.1 Ω -65-ns
t
d(off)
Turn-off delay time - 108 - ns
t
f
Turn-off fall time - 70 - ns
L
d
Internal drain inductance Measured from tab to centre of die - 3.5 - nH
L
d
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
(SOT78 package only)
L
s
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
C
iss
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1080 - pF
C
oss
Output capacitance - 190 - pF
C
rss
Feedback capacitance - 110 - pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
Continuous source current Tmb = 25˚C - - 10.6 A
(body diode)
I
SM
Pulsed source current (body Tmb = 25˚C - - 42 A
diode)
V
SD
Diode forward voltage IS = 10.6 A; VGS = 0 V - - 1.2 V
t
rr
Reverse recovery time IS = 10.6 A; VGS = 0 V; dI/dt = 100 A/µs - 330 - ns
Q
rr
Reverse recovery charge - 4.8 - µC
December 1998 3 Rev 1.200
Loading...