Philips PH5416 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D186

PH5416

PNP high-voltage transistor

Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04

1997 Apr 22

Philips Semiconductors Product specification

PNP high-voltage transistor PH5416

FEATURES

• High current (max. 1 A)

• High voltage (max. 300 V).

PINNING

PIN DESCRIPTION

1 emitter
2 base

APPLICATIONS

3 collector

• Telephony applications.

DESCRIPTION

PNP high-voltage transistor in a TO-92; SOT54 plastic
package.

handbook, halfpage

1

2

3

2

MAM281

Fig.1 Simplified outline (TO-92; SOT54)

and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

I

CM

P

tot

h

FE

f

T

collector-base voltage open emitter −−350 V
collector-emitter voltage open base −−300 V
peak collector current −−1A
total power dissipation T

≤ 25 °C − 500 mW

amb

DC current gain IC= −50 mA; VCE= −10 V 30 120
transition frequency IC= −10 mA; VCE= −10 V; f = 100 MHz 15 − MHz

3

1

1997 Apr 22 2

Philips Semiconductors Product specification

PNP high-voltage transistor PH5416

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

collector-base voltage open emitter −−350 V
collector-emitter voltage open base −−300 V
emitter-base voltage open collector −−6V
collector current (DC) −−1A
peak collector current −−1A
peak base current −−500 mA
total power dissipation T

≤ 25 °C − 500 mW

amb

storage temperature −65 150 °C
junction temperature − 150 °C
operating ambient temperature −65 150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 250 K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

C

c

collector cut-off current IE= 0; VCB= −280 V −−100 nA
emitter cut-off current IC= 0; VEB= −6V −−100 nA
DC current gain IC= −50 mA; VCE= −10 V 30 120
collector-emitter saturation voltage IC= −50 mA; IB= −5mA −−800 mV
base-emitter saturation voltage IC= −50 mA; IB= −5mA −−1V
collector capacitance IE=ie= 0; VCB= −10 V;

− 15 pF

f = 1 MHz

C

e

emitter capacitance IC=ic= 0; VEB= −5V;

− 75 pF

f = 1 MHz

f

T

transition frequency IC= −10 mA; VCE= −10 V;

15 − MHz

f = 100 MHz

1997 Apr 22 3