Philips PH5416 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
PH5416
PNP high-voltage transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 22
Philips Semiconductors Product specification
PNP high-voltage transistor PH5416
FEATURES
• High current (max. 1 A)
• High voltage (max. 300 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector
• Telephony applications.
DESCRIPTION
PNP high-voltage transistor in a TO-92; SOT54 plastic
package.
handbook, halfpage
1
2
3
2
MAM281
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
I
CM
P
tot
h
FE
f
T
collector-base voltage open emitter −−350 V
collector-emitter voltage open base −−300 V
peak collector current −−1A
total power dissipation T
≤ 25 °C − 500 mW
amb
DC current gain IC= −50 mA; VCE= −10 V 30 120
transition frequency IC= −10 mA; VCE= −10 V; f = 100 MHz 15 − MHz
3
1
1997 Apr 22 2
Philips Semiconductors Product specification
PNP high-voltage transistor PH5416
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−350 V
collector-emitter voltage open base −−300 V
emitter-base voltage open collector −−6V
collector current (DC) −−1A
peak collector current −−1A
peak base current −−500 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
storage temperature −65 150 °C
junction temperature − 150 °C
operating ambient temperature −65 150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
collector cut-off current IE= 0; VCB= −280 V −−100 nA
emitter cut-off current IC= 0; VEB= −6V −−100 nA
DC current gain IC= −50 mA; VCE= −10 V 30 120
collector-emitter saturation voltage IC= −50 mA; IB= −5mA −−800 mV
base-emitter saturation voltage IC= −50 mA; IB= −5mA −−1V
collector capacitance IE=ie= 0; VCB= −10 V;
− 15 pF
f = 1 MHz
C
e
emitter capacitance IC=ic= 0; VEB= −5V;
− 75 pF
f = 1 MHz
f
T
transition frequency IC= −10 mA; VCE= −10 V;
15 − MHz
f = 100 MHz
1997 Apr 22 3
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