Philips PH3830L User Manual

M3D748

1. Product proﬁle

1.1 Description

1.2 Features

1.3 Applications

PH3830L

N-channel TrenchMOS™ logic level FET

Rev. 03 — 2 March 2004 Product data

N-channel enhancement mode ﬁeld-effect powertransistorinaplasticpackage using TrenchMOS™ technology.

■ Low thermal resistance ■ SO8 equivalent area footprint

■ Logic level gate drive ■ Low on-state resistance.

■ DC-to-DC converters ■ Switched-mode power supplies

■ Portable appliances ■ Notebook computers.

1.4 Quick reference data

■ VDS≤ 30 V ■ ID≤ 98 A

■ P

≤ 62.5 W ■ R

tot

DSon

2. Pinning information

Table 1: Pinning - SOT669 (LFPAK), simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1,2,3 source (s) 4 gate (g) mb mounting base;

connected to drain (d)

1

23mb4

Top view

SOT669 (LFPAK)

MBL286

≤ 3.8 mΩ

MBB076

d

g

s

Philips Semiconductors

PH3830L

N-channel TrenchMOS™ logic level FET

3. Ordering information

Table 2: Ordering information

Type number Package

Name Description Version

PH3830L LFPAK Plastic single-ended surface mounted package; 4 leads SOT669

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

Avalanche ruggedness

E

DS(AL)S

drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C - 30 V gate-source voltage - ±20 V drain current (DC) Tmb=25°C; VGS=10V;Figure 2 and 3 -98A

= 100 °C; VGS=10V;Figure 2 -62A

T

mb

peak drain current Tmb=25°C; pulsed; tp≤ 10 µs; Figure 3 - 290 A total power dissipation Tmb=25°C; Figure 1 - 62.5 W storage temperature −55 +150 °C junction temperature −55 +150 °C

source (diode forward) current (DC) Tmb=25°C - 52 A peak source (diode forward) current Tmb=25°C; pulsed; tp≤ 10 µs - 150 A

non-repetitive drain-source avalanche energy

unclamped inductive load; ID= 70.7 A;

= 0.1 ms; VDD≤ 30 V; VGS=10V;

t

p

starting T

=25°C

j

- 250 mJ

9397 750 12945

Product data Rev. 03 — 2 March 2004 2 of 12

Philips Semiconductors

PH3830L

N-channel TrenchMOS™ logic level FET

120

P

der

(%)

80

40

0

0 50 100 150 200

P

der

tot

-----------------------

P

tot 25 C°()

100%×=

03aa15

Tmb (°C)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

120

I

der

(%)

80

40

0

0 50 100 150 200

03aa23

Tmb (°C)

VGS≥ 10 V

I

der

D

-------------------

I

°

D25C

()

100%×=

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

µ

003aaa377

s

VDS (V)

10

I

D

(A)

10

1

10

3

Limit R

2

-1

10

DSon

= V

/ I

DS

D

tp = 10 µs

100 1 ms

DC

1 10 10

10 ms

100 ms

Tmb=25°C; IDM is single pulse; VGS=10V

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

2

9397 750 12945

Product data Rev. 03 — 2 March 2004 3 of 12

Philips Semiconductors

PH3830L

N-channel TrenchMOS™ logic level FET

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-mb)

thermal resistance from junction to mounting base Figure 4 --2K/W

5.1 Transient thermal impedance

003aaa378

δ =

t

p

T

tp (s)

Z

th(j-mb) (K/W)

10

1

10

δ = 0.5

0.2

0.1

0.02

0.05 single pulse

-1

-4

10

-3

10

-2

10

-1

10

P

1 10

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

t

p

T

t

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Product data Rev. 03 — 2 March 2004 4 of 12

Philips Semiconductors

PH3830L

N-channel TrenchMOS™ logic level FET

6. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

Dynamic characteristics

Q

g(tot)

Q

gs

Q

gd

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Source-drain diode

V

SD

t

rr

drain-source breakdown voltage ID= 250 µA; VGS=0V 30--V gate-source threshold voltage ID= 1 mA; VDS=VGS; Figure 9

=25°C 1 1.5 2 V

T

j

= 150 °C 0.65 - - V

T

j

drain-source leakage current VDS=30V; VGS=0V; Tj=25°C - 0.06 1 µA gate-source leakage current VGS= ±15 V; VDS= 0 V - 20 100 nA drain-source on-state resistance VGS=10V; ID=25A;Figure 7 and 8

=25°C - 3.2 3.8 mΩ

T

j

= 150 °C - 5.4 6.5 mΩ

T

j

=5V; ID=25A;Figure 7 - 4 4.9 mΩ

V

GS

total gate charge ID= 20 A; VDD=10V; VGS=5V;Figure 13 -33-nC gate-source charge - 11 - nC gate-drain (Miller) charge - 11 - nC input capacitance VGS=0V; VDS= 10 V; f = 1 MHz; Figure 11 -3190-pF output capacitance - 1050 - pF reverse transfer capacitance - 457 - pF turn-on delay time VDD=15V; ID= 20 A; VGS= 4.5 V; RG= 4.7 Ω -30-ns rise time -88-ns turn-off delay time - 58 - ns fall time -57-ns

source-drain (diode forward) voltage IS= 25 A; VGS=0V;Figure 12 - 0.85 1.2 V reverse recovery time IS= 20 A; dIS/dt = −100 A/µs; VGS=0V - 42 - ns

9397 750 12945

Product data Rev. 03 — 2 March 2004 5 of 12

Philips Semiconductors

PH3830L

N-channel TrenchMOS™ logic level FET

60

I

D

(A)

40

20

0

0 0.5 1 1.5 2

10 V

5 V

3.5 V

003aaa379

VGS = 3.1 V

3 V

2.9 V

2.8 V

2.7 V

2.6 V

2.5 V

V

DS

(V)

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

003aaa381

3.1 V

R

DSon

(mΩ)

12

2.9 V

3 V

50

I

D

(A)

40

30

20

10

0

1234

=25°C and 150 °C; VDS> IDxR

j

Tj = 150 °C

25 °C

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

1.8

a

003aaa380

VGS (V)

DSon

03al00

8

VGS = 3.5 V

4 V

4

0

01020304050

5 V

10 V

ID (A)

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

1.2

0.6

0

-60 0 60 120 180

R

DSon

=

a

---------------------------- -

R

DSon 25 C°()

Tj (°C)

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

9397 750 12945

Product data Rev. 03 — 2 March 2004 6 of 12

Philips Semiconductors

PH3830L

N-channel TrenchMOS™ logic level FET

2.5

V

GS(th)

(V)

2

1.5

1

0.5

0

-60 0 60 120 180

ID= 1 mA; VDS=V

GS

max

typ

min

03aa33

Tj (°C)

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

4

10

C

(pF)

-1

10

I

D

(A)

-2

10

-3

10

-4

10

-5

10

-6

10

0123

03aa36

maxtypmin

VGS (V)

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

003aaa382

C

iss

3

10

C

oss

C

rss

2

10

-1

10

1 10 10

VDS (V)

2

VGS= 0 V; f = 1 MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

9397 750 12945

Product data Rev. 03 — 2 March 2004 7 of 12

Philips Semiconductors

PH3830L

N-channel TrenchMOS™ logic level FET

50

I

S

(A)

40

30

20

10

0

0 0.2 0.4 0.6 0.8 1

Tj = 150 °C

003aaa383

25 °C

VSD (V)

10

V

GS

(V)

8

6

4

2

0

0 20406080

Tj=25°C and 150 °C; VGS=0V ID= 20 A; VDD=10V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

values.

003aaa384

QG (nC)

9397 750 12945

Product data Rev. 03 — 2 March 2004 8 of 12

Philips Semiconductors

7. Package outline

PH3830L

N-channel TrenchMOS™ logic level FET

Plastic single-ended surface mounted package (Philips version LFPAK); 4 leads

A

E

b

2

L

1

D

H

L

2

1

234

e

1/2

e

A

c

mounting

base

w

M

b

A

2

C

2

D

1

X

c

SOT669

E

1

b

3

b

4

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

A

1

0.15

1.20

0.00

1.01

OUTLINE VERSION

SOT669 MO-235

A

bcA e

b

2

3

1.10

0.25 4.20 1.27 0.25 0.1

0.95

IEC JEDEC JEITA

0.50

0.35

2

4.41

3.62

3

2.2

2.0

b

4

0.9

0.25

0.7

0.19

REFERENCES

c

0.30

0.24

(1)

D

2

4.10

3.80

A

D

max

C

A

1

detail X

(1)

E

5.0

4.8

(1)

E

1

3.3

3.1

H

6.2

0.85

5.8

0.40

EUROPEAN

PROJECTION

L

1

1.3

0.8

1

L

1.3

0.8

2

(A )

3

θ

yC

wy

ISSUE DATE

03-02-05 03-09-15

θ

8° 0°

Fig 14. SOT669 (LFPAK).

9397 750 12945

Product data Rev. 03 — 2 March 2004 9 of 12

Philips Semiconductors

8. Revision history

Table 6: Revision history

Rev Date CPCN Description

03 20040302 - Product data (9397 750 12945)

Modiﬁcations:

• Table 5 “Characteristics” t

02 20030918 - Product data (9397 750 11776)

Modiﬁcations:

• Section 3 “Ordering information” added.

• Table 5 “Characteristics” Q

• Table 3 “Limiting values” V

• Figure 7 revised.

01 20030502 - Product data (9397 750 11403).

data revised.

r

data revised.

g(tot)

data revised.

GS

PH3830L

N-channel TrenchMOS™ logic level FET

9397 750 12945

Product data Rev. 03 — 2 March 2004 10 of 12

Philips Semiconductors

9. Data sheet status

PH3830L

N-channel TrenchMOS™ logic level FET

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheet containsdatafromthe preliminary speciﬁcation. Supplementary data will bepublished

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

10. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2][3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, andmakes no representations or warrantiesthat these products are free from patent, copyright,or mask work right infringement, unless otherwise speciﬁed.

12. Trademarks

11. Disclaimers

TrenchMOS —is a trademark of Koninklijke Philips Electronics N.V.

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors

Contact information

For additional information, please visit http://www.semiconductors.philips.com. For sales ofﬁce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. Fax: +31 40 27 24825

9397 750 12945

Product data Rev. 03 — 2 March 2004 11 of 12

Philips Semiconductors

Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

5.1 Transient thermal impedance . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

9 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11

10 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

PH3830L

N-channel TrenchMOS™ logic level FET

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Date of release: 2 March 2004 Document order number: 9397 750 12945

Philips PH3830L User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

1.1 Description

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Limiting values

5. Thermal characteristics

5.1 Transient thermal impedance

6. Characteristics

7. Package outline

8. Revision history

9. Data sheet status

12. Trademarks

11. Disclaimers