Philips PH2907A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
PH2907A
PNP switching transistor
Product specification
Supersedes data of 1997 Jun 02
1999 Apr 27
Philips Semiconductors Product specification
PNP switching transistor PH2907A
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 60 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector
• Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a TO-92; SOT54 plastic
package. NPN complement: PH2222A.
handbook, halfpage
1
2
3
2
MAM281
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−60 V
collector-emitter voltage open base −−60 V
emitter-base voltage open collector −−5V
collector current (DC) −−600 mA
peak collector current −−800 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
3
1
1999 Apr 27 2
Philips Semiconductors Product specification
PNP switching transistor PH2907A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB= −50 V −−10 nA
I
= 0; VCB= −50 V; T
E
= 150 °C −−10 µA
amb
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain IC= −0.1 mA; VCE= −10 V 75 −
I
= −1 mA; VCE= −10 V 100 −
C
= −10 mA; VCE= −10 V 100 −
I
C
I
= −150 mA; VCE= −10 V; note 1 100 300
C
I
= −500 mA; VCE= −10 V; note 1 50 −
C
collector-emitter saturation voltage IC= −150 mA; IB= −15 mA; note 1 −−400 mV
I
= −500 mA; IB= −50 mA; note 1 −−1.6 V
C
base-emitter saturation voltage IC= −150 mA; IB= −15 mA; note 1 −−1.3 V
I
= −500 mA; IB= −50 mA; note 1 −−2.6 V
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 100 kHz − 8pF
emitter capacitance IC=ic= 0; VEB= −2 V; f = 100 kHz − 30 pF
transition frequency IC= −50 mA; VCE= −20 V; f = 100 MHz;
200 − MHz
note 1
Switching times (between 10% and 90% levels); see Fig.2
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 12 ns
= −150 mA; I
Con
I
=15mA
Boff
rise time − 30 ns
turn-off time − 365 ns
storage time − 300 ns
fall time − 65 ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 27 3
= −15 mA;
Bon
− 40 ns
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