Philips PH2369 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
PH2369
NPN switching transistor
Product specification
Supersedes data of 1997 May 27
1999 Apr 27
Philips Semiconductors Product specification
NPN switching transistor PH2369
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 15 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector
• High-speed switching.
DESCRIPTION
NPN switching transistor in a TO-92; SOT54 plastic
package.
handbook, halfpage
1
2
3
2
MAM182
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 4.5 V
collector current (DC) − 200 mA
peak collector current − 300 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
3
1
1999 Apr 27 2
Philips Semiconductors Product specification
NPN switching transistor PH2369
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
Switching times (between 10% and 90% levels)
t
on
t
d
t
r
t
off
t
s
t
f
t
on
t
off
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB=20V − 400 nA
I
= 0; VCB=20V; Tj= 125 °C − 30 µA
E
emitter cut-off current IC= 0; VEB=4V − 100 nA
DC current gain IC= 10 mA; VCE= 1 V 40 120
I
= 10 mA; VCE=1V; T
C
= 100 mA; VCE=2V 20 −
I
C
= −55 °C20−
amb
collector-emitter saturation voltage IC= 10 mA; IB=1mA − 250 mV
base-emitter saturation voltage IC= 10 mA; IB= 1 mA 700 850 mV
collector capacitance IE=ie= 0; VCB= 5 V; f = 1 MHz − 4pF
emitter capacitance IC=ic= 0; VEB=1V; f=1MHz − 4.5 pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 500 − MHz
turn-on time I
delay time − 4ns
= 10 mA; I
Con
Bon
= 3 mA; I
see Fig.2 test conditions A
= −1.5 mA;
Boff
− 10 ns
rise time − 6ns
turn-off time − 20 ns
storage time − 10 ns
fall time − 10 ns
turn-on time I
turn-off time − 35 ns
= 100 mA; I
Con
= 40 mA; I
Bon
see Fig.2 test conditions B
= −20 mA;
Boff
− 13 ns
1999 Apr 27 3
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