Philips PH2222A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
PH2222A
NPN switching transistor
Product specification
Supersedes data of 1997 Sep 04
1999 Apr 27
Philips Semiconductors Product specification
NPN switching transistor PH2222A
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector
• Switching and linear amplification.
DESCRIPTION
NPN switching transistor in a TO-92; SOT54 plastic
handbook, halfpage
1
2
3
2
package. PNP complement: PH2907A.
MAM182
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 75 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6V
collector current (DC) − 600 mA
peak collector current − 800 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
3
1
1999 Apr 27 2
Philips Semiconductors Product specification
NPN switching transistor PH2222A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB=60V − 10 nA
I
= 0; VCB=60V; T
E
= 150 °C − 10 µA
amb
emitter cut-off current IC= 0; VEB=3V − 10 nA
DC current gain IC= 0.1 mA; VCE=10V 35 −
I
= 1 mA; VCE=10V 50 −
C
= 10 mA; VCE=10V 75 −
I
C
I
= 10 mA; VCE=10V; T
C
I
= 150 mA; VCE= 1 V; note 1 50 −
C
I
= 150 mA; VCE= 10 V; note 1 100 300
C
I
= 500 mA; VCE= 10 V; note 1 40 −
C
= −55 °C35 −
amb
collector-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1 − 300 mV
I
= 500 mA; IB= 50 mA; note 1 − 1V
C
base-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1 0.6 1.2 V
I
= 500 mA; IB= 50 mA; note 1 − 2V
C
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 8pF
emitter capacitance IC=ic= 0; VEB= 500 mV; f = 1 MHz − 25 pF
transition frequency IC= 20 mA; VCE= 20 V; f = 100 MHz 300 − MHz
= 200 µA; VCE=5V; RS=2kΩ;
C
− 4db
f = 1 kHz; B = 200 Hz
Switching times (between 10% and 90% levels); see Fig.2
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 15 ns
rise time − 20 ns
turn-off time − 250 ns
storage time − 200 ns
fall time − 60 ns
= 150 mA; I
Con
I
= −15 mA
Boff
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 27 3
=15mA;
Bon
− 35 ns
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