Philips PESDxV4UW Technical data
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PESDxV4UW series
Very low capacitance quadruple ESD protection diode arrays
in SOT665 package
Rev. 01 — 22 April 2005 Product data sheet
1. Product profile
1.1 General description
Very low capacitance quadruple ElectroStatic Discharge (ESD) protection diode arrays in
ultra small SOT665 plastic package designed to protect up to four signal lines from the
damage caused by ESD and other transients.
1.2 Features
■ ESD protection of up to four lines ■ Ultra low leakage current: IRM = 3 nA
■ Very low diode capacitance ■ ESD protection up to 12 kV
■ Low clamping voltage ■ IEC 61000-4-2; level 4 (ESD)
1.3 Applications
■ Computers and peripherals ■ Communication systems
■ Audio and video equipment ■ Portable electronics
■ Cellular handsets and accessories ■ Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
C
RWM
d
reverse stand-off voltage
PESD3V3V4UW - - 3.3 V
PESD5V0V4UW - - 5.0 V
diode capacitance f = 1 MHz;
see
Figure 5;
V
=0V
R
PESD3V3V4UW - 15 18 pF
PESD5V0V4UW - 12 15 pF
Philips Semiconductors
2. Pinning information
Table 2: Pinning
Pin Description Simplified outline Symbol
1 cathode 1
2 common anode
3 cathode 2
4 cathode 3
5 cathode 4
3. Ordering information
Table 3: Ordering information
Type number Package
PESD3V3V4UW - plastic surface mounted package; 5 leads SOT665
PESD5V0V4UW
PESDxV4UW series
Very low capacitance quadruple ESD protection diode arrays
45
123
Name Description Version
1
3
4
5
2
sym050
4. Marking
Table 4: Marking codes
Type number Marking code
PESD3V3V4UW W1
PESD5V0V4UW W2
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
PP
I
PP
peak pulse power 8/20 µs
PESD3V3V4UW - 16 W
PESD5V0V4UW - 16 W
peak pulse current 8/20 µs
PESD3V3V4UW - 1.5 A
PESD5V0V4UW - 1.5 A
[1] [2]
[1] [2]
9397 750 14481 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 22 April 2005 2 of 11
Philips Semiconductors
PESDxV4UW series
Very low capacitance quadruple ESD protection diode arrays
Table 5: Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
j
T
amb
T
stg
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5; see
Figure 1.
[2] Measured from pin 1, 3, 4 or 5 to 2.
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
Table 6: ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
V
ESD
electrostatic discharge voltage IEC 61000-4-2
[1] [2]
(contact discharge)
PESD3V3V4UW - 12 kV
PESD5V0V4UW - 12 kV
PESDxV4UW series HBM MIL-STD 883 - 10 kV
[1] Device stressed with ten non-repetitive ESD pulses; see Figure 2.
[2] Measured from pin 1, 3, 4 or 5 to 2.
120
I
PP
(%)
80
40
0
0403010 20
Table 7: ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD); see
Figure 2 > 8 kV (contact)
HBM MIL-STD 883; class 3 > 4 kV
I
PP
100 %
90 %
10 %
100 % IPP; 8 µs
−t
e
50 % I
PP
; 20 µs
001aaa630
t (µs)
tr = 0.7 ns to 1 ns
30 ns
60 ns
001aaa631
t
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
9397 750 14481 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 22 April 2005 3 of 11
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
Philips Semiconductors
PESDxV4UW series
Very low capacitance quadruple ESD protection diode arrays
6. Characteristics
Table 8: Characteristics
T
= 25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
I
V
C
V
r
RWM
RM
BR
d
CL
dif
reverse stand-off voltage
PESD3V3V4UW - - 3.3 V
PESD5V0V4UW - - 5.0 V
reverse leakage current see Figure 6;
PESD3V3V4UW V
PESD5V0V4UW V
= 3.3 V - 40 300 nA
RWM
= 5.0 V - 3 25 nA
RWM
breakdown voltage IR = 1 mA
PESD3V3V4UW 5.3 5.6 5.9 V
PESD5V0V4UW 6.4 6.8 7.2 V
diode capacitance f = 1 MHz; see Figure 5;
PESD3V3V4UW V
PESD5V0V4UW V
clamping voltage
= 0 V - 15 18 pF
R
= 3.3 V - 9 12 pF
V
R
= 0 V - 12 15 pF
R
= 5 V - 6 9 pF
V
R
[1] [2]
PESD3V3V4UW IPP = 1 A - - 9 V
= 2 A - - 11 V
I
PP
PESD5V0V4UW I
= 1 A - - 11 V
PP
= 1.7 A - - 13 V
I
PP
differential resistance IR = 1 mA
PESD3V3V4UW - - 200 Ω
PESD5V0V4UW - - 100 Ω
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5; see Figure 1.
[2] Measured from pin 1, 3, 4 or 5 to 2.
9397 750 14481 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 22 April 2005 4 of 11
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