Philips PESDxV4UG Technical data
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PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
in SOT353 package
Rev. 02 — 7 April 2005 Product data sheet
1. Product profile
1.1 General description
Very low capacitance quadruple ElectroStatic Discharge (ESD) protection diode arrays in
very small SOT353 (SC-88A) plastic package designed to protect up to four signal lines
from the damage caused by ESD and other transients.
1.2 Features
■ ESD protection of up to four lines ■ Ultra low leakage current: IRM = 3 nA
■ Very low diode capacitance ■ ESD protection up to 12 kV
■ Low clamping voltage ■ IEC 61000-4-2; level 4 (ESD)
1.3 Applications
■ Computers and peripherals ■ Communication systems
■ Audio and video equipment ■ Portable electronics
■ Cellular handsets and accessories ■ Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
C
RWM
d
reverse stand-off voltage
PESD3V3V4UG - - 3.3 V
PESD5V0V4UG - - 5.0 V
diode capacitance f = 1 MHz; VR=0V;
see
Figure 5
PESD3V3V4UG - 15 18 pF
PESD5V0V4UG - 12 15 pF
Philips Semiconductors
2. Pinning information
Table 2: Pinning
Pin Description Simplified outline Symbol
1 cathode 1
2 common anode
3 cathode 2
4 cathode 3
5 cathode 4
3. Ordering information
Table 3: Ordering information
Type number Package
PESD3V3V4UG SC-88A plastic surface mounted package; 5 leads SOT353
PESD5V0V4UG
PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
45
132
Name Description Version
1
3
4
5
2
sym050
4. Marking
Table 4: Marking codes
Type number Marking code
PESD3V3V4UG V1*
PESD5V0V4UG V2*
[1] * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
PP
I
PP
[1]
peak pulse power 8/20 µs
[1] [2]
PESD3V3V4UG - 16 W
PESD5V0V4UG - 16 W
peak pulse current 8/20 µs
[1] [2]
PESD3V3V4UG - 1.5 A
PESD5V0V4UG - 1.5 A
9397 750 14479 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 7 April 2005 2 of 11
Philips Semiconductors
PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
Table 5: Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
j
T
amb
T
stg
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5; see
Figure 1.
[2] Measured from pin 1, 3, 4 or 5 to 2.
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
Table 6: ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
V
ESD
electrostatic discharge voltage IEC 61000-4-2
[1] [2]
(contact discharge)
PESD3V3V4UG - 12 kV
PESD5V0V4UG - 12 kV
PESDxV4UG series HBM MIL-STD-883 - 10 kV
[1] Device stressed with ten non-repetitive ESD pulses; see Figure 2.
[2] Measured from pin 1, 3, 4 or 5 to 2.
120
I
PP
(%)
80
40
0
0403010 20
Table 7: ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD); see
Figure 2 > 8 kV (contact)
HBM MIL-STD-883; class 3 > 4 kV
I
PP
100 %
90 %
10 %
100 % IPP; 8 µs
−t
e
50 % I
PP
; 20 µs
001aaa630
t (µs)
tr = 0.7 ns to 1 ns
30 ns
60 ns
001aaa631
t
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
9397 750 14479 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 7 April 2005 3 of 11
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
Philips Semiconductors
PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
6. Characteristics
Table 8: Characteristics
T
= 25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
I
V
C
V
r
RWM
RM
BR
d
CL
dif
reverse stand-off voltage
PESD3V3V4UG - - 3.3 V
PESD5V0V4UG - - 5.0 V
reverse leakage current see Figure 6;
PESD3V3V4UG V
PESD5V0V4UG V
= 3.3 V - 40 300 nA
RWM
= 5.0 V - 3 25 nA
RWM
breakdown voltage IR = 1 mA
PESD3V3V4UG 5.3 5.6 5.9 V
PESD5V0V4UG 6.4 6.8 7.2 V
diode capacitance f = 1 MHz; see Figure 5;
PESD3V3V4UG V
PESD5V0V4UG V
clamping voltage
= 0 V - 15 18 pF
R
= 3.3 V - 9 12 pF
V
R
= 0 V - 12 15 pF
R
= 5 V - 6 9 pF
V
R
[1] [2]
PESD3V3V4UG IPP = 1 A - - 9 V
= 2 A - - 11 V
I
PP
PESD5V0V4UG I
= 1 A - - 11 V
PP
= 1.7 A - - 13 V
I
PP
differential resistance IR = 1 mA
PESD3V3V4UG - - 200 Ω
PESD5V0V4UG - - 100 Ω
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5; see Figure 1.
[2] Measured from pin 1, 3, 4 or 5 to 2.
9397 750 14479 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 7 April 2005 4 of 11
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