Philips PESDxU1UT Technical data
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PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
Rev. 01 — 11 May 2005 Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23
(TO-236AB) small SMD plastic package designed to protect one high-speed data line
from the damage caused by ESD and other transients.
1.2 Features
■ Unidirectional ESD protection of one line ■ ESD protection > 23 kV
■ Ultra low diode capacitance: Cd = 0.6 pF ■ IEC 61000-4-2; level 4 (ESD)
■ Max. peak pulse power: PPP up to 200 W ■ IEC 61000-4-5; (surge)
■ Low clamping voltage
1.3 Applications
■ 10/100/1000 Ethernet ■ Local Area Network (LAN) equipment
■ FireWire ■ Computers and peripherals
■ Communication systems ■ High-speed datalines
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
C
d
[1] Measured from pin 1 to 2
reverse stand-off voltage
PESD3V3U1UT - - 3.3 V
PESD5V0U1UT - - 5.0 V
PESD12VU1UT - - 12 V
PESD15VU1UT - - 15 V
PESD24VU1UT - - 24 V
diode capacitance f = 1 MHz; VR=0V
[1]
- 0.6 1.5 pF
Philips Semiconductors
2. Pinning information
Table 2: Pinning
Pin Description Simplified outline Symbol
1 cathode ESD protection diode
2 cathode compensation diode
3 common anode
3. Ordering information
Table 3: Ordering information
Type number Package
PESD3V3U1UT - plastic surface mounted package; 3 leads SOT23
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
3
12
Name Description Version
3
12
006aaa441
4. Marking
Table 4: Marking codes
Type number Marking code
PESD3V3U1UT *AP
PESD5V0U1UT *AQ
PESD12VU1UT *AR
PESD15VU1UT *AS
PESD24VU1UT *AT
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
[1]
9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 11 May 2005 2 of 13
Philips Semiconductors
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
PP
I
PP
T
j
T
amb
T
stg
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
peak pulse power 8/20 µs
PESD3V3U1UT - 80 W
PESD5V0U1UT - 80 W
PESD12VU1UT - 200 W
PESD15VU1UT - 200 W
PESD24VU1UT - 200 W
peak pulse current 8/20 µs
PESD3V3U1UT - 5 A
PESD5V0U1UT - 5 A
PESD12VU1UT - 5 A
PESD15VU1UT - 5 A
PESD24VU1UT - 3 A
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
[1]
[1]
9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 11 May 2005 3 of 13
Philips Semiconductors
Table 6: ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
V
ESD
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to 2
Table 7: ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
HBM MIL-STD-883; class 3 > 4 kV
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
PESD3V3U1UT - 30 kV
PESD5V0U1UT - 30 kV
PESD12VU1UT - 30 kV
PESD15VU1UT - 30 kV
PESD24VU1UT - 23 kV
PESDxU1UT HBM MIL-STD-883 - 10 kV
[1] [2]
PP
; 20 µs
001aaa630
t (µs)
120
I
PP
(%)
80
40
0
0403010 20
100 % IPP; 8 µs
−t
e
50 % I
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
I
PP
100 %
90 %
10 %
tr = 0.7 ns to 1 ns
30 ns
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
001aaa631
t
9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 11 May 2005 4 of 13
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