Datasheet PESDxS2UT Datasheet (Philips)

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DATA SH EET

PESDxS2UT series

Double ESD protection diodes in
SOT23 package

Product specification
Supersedes data of 2003 Aug 20

2004 Apr 15

Philips Semiconductors Product specification

Double ESD protection diodes
in SOT23 package

FEATURES

• Uni-directional ESD protection of up to two lines

• Max. peak pulse power: Ppp= 330 W at tp= 8/20 µs

• Low clamping voltage: V

• Ultra-low reverse leakage current: IRM< 700 nA

• ESD protection > 23 kV

• IEC 61000-4-2; level 4 (ESD)

• IEC 61000-4-5 (surge); Ipp= 18 A at tp= 8/20 µs.

APPLICATIONS

• Computers and peripherals

• Communication systems

• Audio and video equipment

• High speed data lines

• Parallel ports.

= 20 V at Ipp=18A

(CL)R

PESDxS2UT series

QUICK REFERENCE DATA

SYMBOL PARAMETER VALUE UNIT

V

RWM

C

d

PINNING

reverse stand-off
voltage

diode capacitance
VR=0V;

3.3, 5.2, 12, 15
and 24

207,152,38,32
and 23

f = 1 MHz
number of

2

protected lines

PIN DESCRIPTION

1 cathode 1
2 cathode 2
3 common anode

V

pF

DESCRIPTION

Uni-directional double ESD protection diodes in a SOT23
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.

MARKING

TYPE NUMBER MARKING CODE

(1)

PESD3V3S2UT *U9
PESD5V2S2UT *U1
PESD12VS2UT *U2
PESD15VS2UT *U3
PESD24VS2UT *U4

Note

1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.

1

3

2

001aaa490

1

2

sym022

Fig.1 Simplified outline (SOT23) and symbol.

3

2004 Apr 15 2

Philips Semiconductors Product specification

Double ESD protection diodes

PESDxS2UT series

in SOT23 package

ORDERING INFORMATION

TYPE NUMBER

PESD3V3S2UT − plastic surface mounted package; 3 leads SOT23
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

P

pp

I

pp

T

j

T

amb

T

stg

peak pulse power 8/20 µs pulse; notes 1 and 2

PESD3V3S2UT − 330 W
PESD5V2S2UT − 260 W
PESD12VS2UT − 180 W
PESD15VS2UT − 160 W
PESD24VS2UT − 160 W

peak pulse current 8/20 µs pulse; notes 1 and 2

PESD3V3S2UT − 18 A
PESD5V2S2UT − 15 A
PESD12VS2UT − 5A
PESD15VS2UT − 5A

PESD24VS2UT − 3A
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
storage temperature −65 +150 °C

NAME DESCRIPTION VERSION

PACKAGE

Notes

1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.

2. Measured across either pins 1 and 3 or pins 2 and 3.

2004 Apr 15 3

Philips Semiconductors Product specification

Double ESD protection diodes

PESDxS2UT series

in SOT23 package

ESD maximum ratings

SYMBOL PARAMETER CONDITIONS VALUE UNIT

ESD electrostatic discharge

capability

Notes

1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3.

2. Measured across either pins 1 and 3 or pins 2 and 3.

ESD standards compliance

IEC 61000-4-2 (contact discharge);
notes 1 and 2

PESD3V3S2UT 30 kV
PESD5V2S2UT 30 kV
PESD12VS2UT 30 kV
PESD15VS2UT 30 kV
PESD24VS2UT 23 kV

HBM MIL-Std 883

PESDxS2UT series 10 kV

ESD STANDARD CONDITIONS

IEC 61000-4-2; level 4 (ESD); see Fig.3 >15 kV (air); > 8 kV (contact)
HBM MIL-Std 883; class 3 >4 kV

120

handbook, halfpage

I

pp

(%)

80

40

0

010

100 % Ipp; 8 µs

−t

e

20

MLE218

50 % Ipp; 20 µs

30

t (µs)

40

100 %

90 %

10 %

I

pp

tr = 0.7 to 1 ns

30 ns

001aaa191

t

60 ns

Fig.2 8/20 µs pulse waveform according to

IEC 61000-4-5.

2004 Apr 15 4

Fig.3 ElectroStatic Discharge (ESD) pulse

waveform according to IEC 61000-4-2.

Philips Semiconductors Product specification

Double ESD protection diodes

PESDxS2UT series

in SOT23 package

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

I

V

C

V

RM

RWM

BR

d

(CL)R

reverse stand-off voltage

PESD3V3S2UT −−3.3 V

PESD5V2S2UT −−5.2 V

PESD12VS2UT −−12 V

PESD15VS2UT −−15 V

PESD24VS2UT −−24 V
reverse leakage current

PESD3V3S2UT V

PESD5V2S2UT V

PESD12VS2UT V

PESD15VS2UT V

PESD24VS2UT V

= 3.3 V − 0.7 2 µA

RWM

= 5.2 V − 0.15 1 µA

RWM

= 12 V − <0.02 1 µA

RWM

= 15 V − <0.02 1 µA

RWM

= 24 V − <0.02 1 µA

RWM

breakdown voltage IZ = 5 mA

PESD3V3S2UT 5.2 5.6 6.0 V

PESD5V2S2UT 6.4 6.8 7.2 V

PESD12VS2UT 14.7 15.0 15.3 V

PESD15VS2UT 17.6 18.0 18.4 V

PESD24VS2UT 26.5 27.0 27.5 V
diode capacitance f = 1 MHz; VR=0V

PESD3V3S2UT − 207 300 pF

PESD5V2S2UT − 152 200 pF

PESD12VS2UT − 38 75 pF

PESD15VS2UT − 32 70 pF

PESD24VS2UT − 23 50 pF
clamping voltage notes 1 and 2

PESD3V3S2UT Ipp=1A −−7V

Ipp=18A −−20 V

PESD5V2S2UT Ipp=1A −−9V

Ipp=15A −−20 V

PESD12VS2UT Ipp=1A −−19 V

Ipp=5A −−35 V

PESD15VS2UT Ipp=1A −−23 V

Ipp=5A −−40 V

PESD24VS2UT Ipp=1A −−36 V

Ipp=3A −−70 V

2004 Apr 15 5

Philips Semiconductors Product specification

Double ESD protection diodes

PESDxS2UT series

in SOT23 package

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

diff

Notes

1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.

2. Measured either across pins 1 and 3 or pins 2 and 3.

GRAPHICAL DATA

4

10

differential resistance

PESD3V3S2UT IR=1mA −−400 Ω

PESD5V2S2UT IR=1mA −−80 Ω

PESD12VS2UT IR=1mA −−200 Ω

PESD15VS2UT IR=1mA −−225 Ω

PESD24VS2UT IR= 0.5 mA −−300 Ω

001aaa147

1.2

001aaa193

P

pp

(W)

3

10

2

10

10

110

(1) PESD3V3S2UT and PESD5V2S2UT.
(2) PESD12VS2UT, PESD15VS2UT, PESD24VS2UT

T

=25°C.

amb

tp= 8/20 µs exponential decay waveform; see Fig.2.

10 10

(1)

(2)

2

3

10

t

p

4

(µs)

P

P

pp(25˚C)

pp

0.8

0.4

Fig.5 Relative variation of peak pulse power as a

Fig.4 Peak pulse power dissipation as a function

of pulse time; typical values.

0

0 20015050 100

Tj (°C)

function of junction temperature; typical
values.

2004 Apr 15 6

Philips Semiconductors Product specification

Double ESD protection diodes
in SOT23 package

240

C

d

(pF)

200

160

120

80

40

054231

(1) PESD3V3S2UT; V
(2) PESD5V2S2UT; V

T

= 25 °C; f = 1 MHz.

amb

(1)

(2)

RWM
RWM

= 3.3 V.
=5V.

001aaa148

VR (V)

50

C

d

(pF)

40

30

20

10

0

0252010 155

(1) PESD12VS2UT; V
(2) PESD15VS2UT; V
(3) PESD24VS2UT; V

T

= 25 °C; f = 1 MHz.

amb

PESDxS2UT series

001aaa149

(1)
(2)

(3)

=12V.

RWM

=15V.

RWM

=24V.

RWM

VR (V)

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

Fig.7 Diode capacitance as a function of reverse

voltage; typical values.

2004 Apr 15 7

Philips Semiconductors Product specification

Double ESD protection diodes
in SOT23 package

10

I

R

I

R(25˚C)

1

−1

10

−100 150100050−50

(1) PESD3V3S2UT; V

PESD5V2S2UT; V

RWM
RWM

(1)

= 3.3 V.
=5V.

001aaa270

Tj (°C)

PESDxS2UT series

IR is less than 10 nA at 150 °C for:
PESD12V52UT; V
PESD15VS2UT; V
PESD24VS2UT; V

RWM

RWM
RWM

=12V.

=15V.
=24V.

Fig.8 Relative variation of reverse leakage

current as a function of junction
temperature; typical values.

2004 Apr 15 8

Philips Semiconductors Product specification

Double ESD protection diodes
in SOT23 package

ESD TESTER

R

Z

C

Z

note 1

Note 1: IEC61000-4-2 network
C

= 150 pF; RZ = 330 Ω

Z

vertical scale = 200 V/div
horizontal scale = 50 ns/div

D.U.T.: PESDxS2UT

450 Ω

RG 223/U
50 Ω coax

GND

10×

ATTENUATOR

PESDxS2UT series

4 GHz DIGITAL

OSCILLOSCOPE

50 Ω

vertical scale = 20 V/div
horizontal scale = 50 ns/div

PESD24VS2UT

GND

unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)

GND

vertical scale = 200 V/div
horizontal scale = 50 ns/div

unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)

GND

GND

GND

GND

clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)

GND

clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)

PESD15VS2UT

PESD12VS2UT

PESD5V2S2UT

PESD3V3S2UT

vertical scale = 10 V/div
horizontal scale = 50 ns/div

001aaa492

Fig.9 ESD clamping test set-up and waveforms.

2004 Apr 15 9

Philips Semiconductors Product specification

Double ESD protection diodes

PESDxS2UT series

in SOT23 package

APPLICATION INFORMATION

The PESDxS2UT series is designed for uni-directional protection for up to two lines against damage caused by
ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UT series may be used on lines where the signal
polarities are below ground. PESDxS2UT series provide a surge capability of up to 330 W (Ppp) per line for an 8/20 µs
waveform.

line 1 to be protected
line 2 to be protected

PESDxS2UT

ground

unidirectional protection

of two lines

bidirectional protection

Fig.10 Typical application: ESD protection of data lines.

line 1 to be protected

PESDxS2UT

ground

of one line

001aaa491

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The
following guidelines are recommended:

• Place the PESDxS2UT as close as possible to the input terminal or connector.

• The path length between the PESDxS2UT and the protected line should be minimized.

• Keep parallel signal paths to a minimum.

• Avoid running protected conductors in parallel with unprotected conductors.

• Minimize all printed-circuit board conductive loops including power and ground loops.

• Minimize the length of transient return paths to ground.

• Avoid using shared return paths to a common ground point.

• Ground planes should be used whenever possible. For multilayer printed-circuit boards use ground vias.

2004 Apr 15 10

Philips Semiconductors Product specification

Double ESD protection diodes

PESDxS2UT series

in SOT23 package

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D

3

E

H

E

AB

X

v

M

A

12

e

1

DIMENSIONS (mm are the original dimensions)

A

1

0.1

b

p

0.48

0.15

0.38

0.09

IEC JEDEC EIAJ

UNIT

A

max.

1.1

mm

0.9

OUTLINE
VERSION

SOT23 TO-236AB

b

p

e

cD

3.0

2.8

w

M

B

0 1 2 mm

scale

e

0.95

H

1

2.5

2.1

E

1.4

1.9

1.2

REFERENCES

e

Q

A

A

1

c

L

p

detail X

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

2004 Apr 15 11

Philips Semiconductors Product specification

Double ESD protection diodes

PESDxS2UT series

in SOT23 package

DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective specification for product

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

III Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

DEFINITION

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2004 Apr 15 12

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R76/03/pp13 Date of release: 2004 Apr 15 Document order number: 9397 750 12823

SCA76