Philips PESDxS2UT Technical data

PESD12VS2UT

DISCRETE SEMICONDUCTORS

DATA SHEET

PESDxS2UT series

Double ESD protection diodes in SOT23 package

Product specification			2004 Apr 15
Supersedes data of 2003 Aug 20

Philips Semiconductors	Product specification

Double ESD protection diodes

PESDxS2UT series

in SOT23 package

FEATURES

∙Uni-directional ESD protection of up to two lines

∙Max. peak pulse power: Ppp = 330 W at tp = 8/20 μs

∙Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A

∙Ultra-low reverse leakage current: IRM < 700 nA

∙ESD protection > 23 kV

∙IEC 61000-4-2; level 4 (ESD)

∙IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 μs.

APPLICATIONS

∙Computers and peripherals

∙Communication systems

∙Audio and video equipment

∙High speed data lines

∙Parallel ports.

DESCRIPTION

Uni-directional double ESD protection diodes in a SOT23 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage.

MARKING

TYPE NUMBER	MARKING CODE(1)
PESD3V3S2UT	*U9
PESD5V2S2UT	*U1
PESD12VS2UT	*U2
PESD15VS2UT	*U3
PESD24VS2UT	*U4

Note

1.* = p : made in Hong Kong.

*= t : made in Malaysia.

*= W : made in China.

QUICK REFERENCE DATA

SYMBOL	PARAMETER		VALUE	UNIT
VRWM	reverse stand-off		3.3, 5.2, 12, 15	V
	voltage		and 24
Cd	diode capacitance		207, 152, 38, 32	pF
	VR = 0 V;		and 23
	f = 1 MHz
	number of		2
	protected lines
PINNING
PIN		DESCRIPTION
1		cathode 1
2		cathode 2
3		common anode

1
3	1
	3
2	2
001aaa490	sym022

Fig.1 Simplified outline (SOT23) and symbol.

2004 Apr 15

2

Philips Semiconductors	Product specification

Double ESD protection diodes

PESDxS2UT series

in SOT23 package

ORDERING INFORMATION

	TYPE NUMBER		PACKAGE
		NAME	DESCRIPTION	VERSION
	PESD3V3S2UT	−	plastic surface mounted package; 3 leads	SOT23
	PESD5V2S2UT
	PESD12VS2UT
	PESD15VS2UT
	PESD24VS2UT

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
Ppp	peak pulse power	8/20 μs pulse; notes 1 and 2
	PESD3V3S2UT		−	330	W
	PESD5V2S2UT		−	260	W
	PESD12VS2UT		−	180	W
	PESD15VS2UT		−	160	W
	PESD24VS2UT		−	160	W
Ipp	peak pulse current	8/20 μs pulse; notes 1 and 2
	PESD3V3S2UT		−	18	A
	PESD5V2S2UT		−	15	A
	PESD12VS2UT		−	5	A
	PESD15VS2UT		−	5	A
	PESD24VS2UT		−	3	A
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C
Tstg	storage temperature		−65	+150	°C

Notes

1.Non-repetitive current pulse 8/20 μs exponential decay waveform; see Fig.2.

2.Measured across either pins 1 and 3 or pins 2 and 3.

2004 Apr 15

3

Philips Semiconductors	Product specification

Double ESD protection diodes

PESDxS2UT series

in SOT23 package

ESD maximum ratings

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
ESD	electrostatic discharge	IEC 61000-4-2 (contact discharge);
	capability	notes 1 and 2
		PESD3V3S2UT	30	kV
		PESD5V2S2UT	30	kV
		PESD12VS2UT	30	kV
		PESD15VS2UT	30	kV
		PESD24VS2UT	23	kV
		HBM MIL-Std 883
		PESDxS2UT series	10	kV

Notes

1.Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3.

2.Measured across either pins 1 and 3 or pins 2 and 3.

ESD standards compliance

ESD STANDARD	CONDITIONS
IEC 61000-4-2; level 4 (ESD); see Fig.3	>15 kV (air); > 8 kV (contact)
HBM MIL-Std 883; class 3	>4 kV

						001aaa191
120			MLE218		Ipp
handbook, halfpage					100 %
Ipp			μs
		100 % Ipp; 8			90 %
(%)
80		e−t
			50 % Ipp; 20 μs
40
					10 %
0	10	20	30	40	tr = 0.7 to 1 ns	t
0					30 ns
			t (μs)
					60 ns

Fig.2 8/20 μs pulse waveform according to	Fig.3 ElectroStatic Discharge (ESD) pulse
IEC 61000-4-5.	waveform according to IEC 61000-4-2.

2004 Apr 15

4