Philips PESDxS2UQ Technical data
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M3D793
PESDxS2UQ series
Double ESD protection diodes in
SOT663 package
Product specification
Supersedes data of 2003 Dec 15
2004 Apr 27
Philips Semiconductors Product specification
Double ESD protection diodes
in SOT663 package
FEATURES
• Uni-directional ESD protection of up to two lines
• Max. peak pulse power: Ppp= 150 W at tp= 8/20 µs
• Low clamping voltage: V
• Low reverse leakage current: IRM<1nA
• ESD protection > 30 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); Ipp= 15 A at tp= 8/20 µs.
APPLICATIONS
• Computers and peripherals
• Communication systems
• Audio and video equipment
• High speed data lines
• Parallel ports.
= 20 V at Ipp=15A
(CL)R
PESDxS2UQ series
QUICK REFERENCE DATA
SYMBOL PARAMETER VALUE UNIT
V
RWM
C
d
PINNING
reverse stand-off
voltage
diode capacitance
VR=0V;
3.3, 5, 12, 15
and 24
200,150, 38,32
and 23
f = 1 MHz
number of
2
protected lines
PIN DESCRIPTION
1 cathode 1
2 cathode 2
3 common anode
V
pF
DESCRIPTION
Uni-directionaldoubleESDprotection diodesin aSOT663
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
MARKING
TYPE NUMBER MARKING CODE
(1)
PESD3V3S2UQ *E1
PESD5V0S2UQ *E2
PESD12VS2UQ *E3
PESD15VS2UQ *E4
PESD24VS2UQ *E5
Note
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
3
1
3
2
1 2
001aaa732
sym022
Fig.1 Simplified outline (SOT663) and symbol.
2004 Apr 27 2
Philips Semiconductors Product specification
Double ESD protection diodes
PESDxS2UQ series
in SOT663 package
ORDERING INFORMATION
TYPE NUMBER
PESD3V3S2UQ − plastic surface mounted package; 3 leads SOT663
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
P
pp
I
pp
T
j
T
amb
T
stg
peak pulse power 8/20 µs pulse; notes 1 and 2 − 150 W
peak pulse current 8/20 µs pulse; notes 1 and 2
PESD3V3S2UQ − 15 A
PESD5V0S2UQ − 15 A
PESD12VS2UQ − 5A
PESD15VS2UQ − 5A
PESD24VS2UQ − 3A
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
storage temperature −65 +150 °C
NAME DESCRIPTION VERSION
PACKAGE
Notes
1. Non-repetitive current pulse 8/20 µs exponential decaying waveform; see Fig.2.
2. Measured across either pins 1 and 3 or pins 2 and 3.
2004 Apr 27 3
Philips Semiconductors Product specification
Double ESD protection diodes
PESDxS2UQ series
in SOT663 package
ESD maximum ratings
SYMBOL PARAMETER CONDITIONS VALUE UNIT
ESD electrostatic discharge
capability
Notes
1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3.
2. Measured across either pins 1 and 3 or pins 2 and 3.
ESD standards compliance
IEC 61000-4-2 (contact discharge);
notes 1 and 2
PESD3V3S2UQ 30 kV
PESD5V0S2UQ 30 kV
PESD12VS2UQ 30 kV
PESD15VS2UQ 30 kV
PESD24VS2UQ 23 kV
HBM MIL-Std 883
PESDxS2UQ series 10 kV
ESD STANDARD CONDITIONS
IEC 61000-4-2; level 4 (ESD); see Fig.3 >15 kV (air); > 8 kV (contact)
HBM MIL-Std 883; class 3 >4 kV
120
handbook, halfpage
I
pp
(%)
80
40
0
010
100 % Ipp; 8 µs
−t
e
20
MLE218
50 % Ipp; 20 µs
30
t (µs)
40
100 %
90 %
10 %
I
pp
tr = 0.7 to 1 ns
30 ns
60 ns
001aaa191
t
Fig.2 8/20 µs pulse waveform according to
IEC 61000-4-5.
2004 Apr 27 4
Fig.3 ElectroStatic Discharge (ESD) pulse
waveform according to IEC 61000-4-2.
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