Philips PESDxS1UB Technical data
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PESDxS1UB series
ESD protection diodes in SOD 523 package
Rev. 01 — 14 June 2004 Product data sheet
1. Product profile
1.1 General description
Unidirectional ESD protection diode in a SOD523 plastic package designed to protect one
transmission or data line from the damage caused by ESD (Electro Static Discharge) and
other transients.
1.2 Features
■ Unidirectional ESD protection of one line
■ Max. peak pulse power: PPP = 330 W at tp = 8/20 µs
■ Low clamping voltage: VCL = 20 V at IPP = 18 A
■ Ultra low leakage current: IRM < 700 nA
■ ESD protection > 23 kV
■ IEC 61000-4-2, level 4 (ESD)
■ IEC 61000-4-5 (surge); IPP = 18 A at tp = 8/20 µs.
1.3 Applications
■ Computers and peripherals
■ Communication systems
■ Audio and video equipment
■ Data lines
■ CAN bus protection.
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Value Unit
V
RWM
reverse standoff voltage
PESD3V3S1UB 3.3 V
PESD5V0S1UB 5 V
PESD12VS1UB 12 V
PESD15VS1UB 15 V
PESD24VS1UB 24 V
Philips Semiconductors
PESDxS1UB series
ESD protection diodes in SOD 523 package
Table 1: Quick reference data
Symbol Parameter Conditions Value Unit
C
d
2. Pinning information
Table 2: Discrete pinning
Pin Description Simplified outline Symbol
1 cathode
2 anode
[1] The marking bar indicates the cathode.
…continued
diode capacitance VR = 0 V; f = 1 MHz
PESD3V3S1UB 207 pF
PESD5V0S1UB 152 pF
PESD12VS1UB 38 pF
PESD15VS1UB 32 pF
PESD24VS1UB 23 pF
number of protected
lines
[1]
1
12
Top view
12
sym035
3. Ordering information
Table 3: Ordering information
Type number Package
PESDxS1UB SC -79 plastic surface mounted package; 2 leads SOD523
4. Marking
Table 4: Marking
Type number Marking code
PESD3V3S1UB N1
PESD5V0S1UB N2
PESD12VS1UB N3
PESD15VS1UB N4
PESD24VS1UB N5
Name Description Version
9397 750 13313 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 01 — 14 June 2004 2 of 15
Philips Semiconductors
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
PP
I
PP
T
j
T
amb
T
stg
[1] Non-repetitive current pulse 8/20 µs exponentially decay waveform; see Figure1.
PESDxS1UB series
ESD protection diodes in SOD 523 package
peak pulse power 8/20 µs
PESD3V3S1UB - 330 W
PESD5V0S1UB - 260 W
PESD12VS1UB - 180 W
PESD15VS1UB - 160 W
PESD24VS1UB - 160 W
peak pulse current 8/20 µs
PESD3V3S1UB - 18 A
PESD5V0S1UB - 15 A
PESD12VS1UB - 5 A
PESD15VS1UB - 5 A
PESD24VS1UB - 3 A
junction temperature - 150 °C
operating ambient
temperature
storage temperature −65 +150 °C
[1]
[1]
−65 +150 °C
Table 6: ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
ESD electrostatic discharge
capability
IEC 61000-4-2
(contact discharge)
[1]
PESD3V3S1UB - 30 kV
PESD5V0S1UB - 30 kV
PESD12VS1UB - 30 kV
PESD15VS1UB - 30 kV
PESD24VS1UB - 23 kV
PESDxS1UB series HBM MIL-STD883 - 10 kV
[1] Device stressed with ten non-repetitive Electro Static Discharge (ESD) pulses; see Figure 2.
Table 7: ESD standards compliance
ESD Standard Conditions
IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact)
HBM MIL-STD883, class 3 > 4 kV
9397 750 13313 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 01 — 14 June 2004 3 of 15
Philips Semiconductors
120
I
(%)
pp
100 % Ipp; 8 µs
001aaa630
PESDxS1UB series
ESD protection diodes in SOD 523 package
001aaa631
I
pp
100 %
90 %
80
40
0
0403010 20
−t
e
50 % Ipp; 20 µs
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5.
10 %
tr = 0.7 to 1 ns
30 ns
60 ns
t
Fig 2. Electro Static Discharge (ESD) pulse waveform
according to IEC 61000-4-2.
9397 750 13313 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 01 — 14 June 2004 4 of 15
Philips Semiconductors
PESDxS1UB series
ESD protection diodes in SOD 523 package
6. Characteristics
Table 8: Characteristics
T
= 25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
V
I
RM
V
C
V
RWM
BR
d
(CL)R
reverse standoff voltage
PESD3V3S1UB - - 3.3 V
PESD5V0S1UB - - 5 V
PESD12VS1UB - - 12 V
PESD15VS1UB - - 15 V
PESD24VS1UB - - 24 V
reverse leakage current see Figure 7
PESD3V3S1UB V
PESD5V0S1UB V
PESD12VS1UB V
PESD15VS1UB V
PESD24VS1UB V
= 3.3 V - 0.7 2 µA
RWM
= 5 V - 0.1 1 µA
RWM
= 12 V - < 1 50 nA
RWM
= 15 V - < 1 50 nA
RWM
= 24 V - < 1 50 nA
RWM
breakdown voltage IR = 5 mA
PESD3V3S1UB 5.2 5.6 6.0 V
PESD5V0S1UB 6.4 6.8 7.2 V
PESD12VS1UB 14.7 15.0 15.3 V
PESD15VS1UB 17.6 18.0 18.4 V
PESD24VS1UB 26.5 27.0 27.5 V
diode capacitance VR = 0 V; f = 1 MHz;
see
Figure 5 and 6
PESD3V3S1UB - 207 300 pF
PESD5V0S1UB - 152 200 pF
PESD12VS1UB - 38 75 pF
PESD15VS1UB - 32 70 pF
PESD24VS1UB - 23 50 pF
clamping voltage
[1]
PESD3V3S1UB IPP = 1 A - - 7 V
= 18 A - - 20 V
I
PP
PESD5V0S1UB I
PESD12VS1UB I
PESD15VS1UB I
PESD24VS1UB I
= 1 A - - 9 V
PP
= 15 A - - 20 V
I
PP
= 1 A - - 19 V
PP
= 5A - - 35 V
I
PP
= 1 A - - 23 V
PP
= 5 A - - 40 V
I
PP
= 1 A - - 36 V
PP
= 3 A - - 70 V
I
PP
9397 750 13313 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 01 — 14 June 2004 5 of 15
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