Datasheet PESDxL4UW Datasheet (Philips)

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DISCRETE SEMICONDUCTORS

DATA SH EET

PESDxL4UW series

Low capacitance quadruple ESD
protection array

Product specification
Supersedes data of 2003 Aug 15

2004 Apr 06

Philips Semiconductors Product specification

Low capacitance quadruple ESD
protection array

FEATURES

• Uni-directional ESD protection of four lines or
bi-directional ESD protection of 3 lines

• Reverse standoff voltage: 3.3 and 5 V

• Low diode capacitance

• Ultra low leakage current

• Ultra small SOT665 surface mount package

• ESD protection >20 kV

• IEC 61000-4-2; level 4 (ESD); 15 kV (air) or

8 kV (contact).

APPLICATIONS

• Cellular handsets and accessories

• Portable electronics

• Computers and peripherals

• Communication systems

• Audio and video equipment.

PESDxL4UW series

DESCRIPTION

Low capacitance quadrupleESD protection array in a five
pad SOT665 ultra small plastic package designed to
protect up to four transmission or data lines from
ElectroStatic Discharge (ESD) damage.

PINNING

PIN DESCRIPTION

1 cathode 1
2 common anode
3 cathode 2
4 cathode 3
5 cathode 4

handbook, halfpage

45

54

MARKING

TYPE NUMBER MARKING CODE

PESD3V3L4UW A2

123

Fig.1 Simplified outline (SOT665) and symbol.

123

MDB678

PESD5V0L4UW A1

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

PESD3V3L4UW − plastic surface mounted package; 5 leads SOT665
PESD5V0L4UW

2004 Apr 06 2

Philips Semiconductors Product specification

Low capacitance quadruple ESD

PESDxL4UW series

protection array

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

pp

P

pp

I

FSM

I

ZSM

P

tot

P

ZSM

T

stg

T

j

ESD electrostatic discharge IEC 61000-4-2 (contact discharge) 20 − kV

peak pulse current 8/20 µs; notes 1 and 2

PESD3V3L4UW − 3A

PESD5V0L4UW − 2.5 A
peak pulse power 8/20 µs; notes 1 and 2 − 30 W
non-repetitive peak forward

tp= 1 ms; square pulse − 3.5 A

current
non-repetitive peak reverse

tp= 1 ms; square pulse

current

PESD3V3L4UW − 0.9 A

PESD5V0L4UW − 0.8 A
total power dissipation T
non-repetitive peak reverse

=25°C; note 3 − 250 mW

amb

tp= 1 ms; square pulse; see Fig.4 − 6W

power dissipation
storage temperature −65 +150 °C
junction temperature − 150 °C

HBM MIL-Std 883 10 − kV

Notes

1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform see Fig.5.

2. Pins 1, 3, 4 or 5 to pin 2.

3. Device mounted on standard printed-circuit board.

ESD standards compliance

IEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact)
HBM MIL-Std 883, class 3 >4 kV

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th(j-a)
th(j-sp)

thermal resistance from junction to ambient all diodes loaded 370 K/W
thermal resistance from junction to solder point one diode loaded; note 1 135 K/W

all diodes loaded; note 1 125 K/W

Notes

1. Solder point of common anode (pin 2).

2004 Apr 06 3

Philips Semiconductors Product specification

Low capacitance quadruple ESD

PESDxL4UW series

protection array

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per diode

V
V

I

V

V

r

C

RM

diff

F
RWM

(CL)R

BR

d

forward voltage IF= 200 mA − 1 1.2 V
reverse stand-off voltage

PESD3V3L4UW −−3.3 V

PESD5V0L4UW −−5V
reverse leakage current

PESD3V3L4UW V

PESD5V0L4UW V

= 3.3 V − 75 300 nA

RWM

=5V − 525nA

RWM

clamping voltage

PESD3V3L4UW Ipp= 1 A; note 1 −−8V

Ipp= 3 A; note 1 −−12 V

PESD5V0L4UW Ipp= 1 A; note 1 −−10 V

Ipp= 2.5 A; note 1 −−13 V

breakdown voltage IZ= 1 mA

PESD3V3L4UW 5.32 5.6 5.88 V

PESD5V0L4UW 6.46 6.8 7.14 V
differential resistance IR=1mA

PESD3V3L4UW −−200 Ω

PESD5V0L4UW −−100 Ω
diode capacitance

PESD3V3L4UW f = 1 MHz; VR=0V − 22 28 pF

f = 1 MHz; VR=5V − 12 17 pF

PESD5V0L4UW f = 1 MHz; VR=0V − 16 19 pF

f = 1 MHz; VR=5V − 811pF

Notes

1. Pins 1, 3, 4 or 5 to pin 2.

2004 Apr 06 4

Philips Semiconductors Product specification

Low capacitance quadruple ESD
protection array

10

handbook, halfpage

I

ZSM

(A)

1

−1

10

−2

10

−1

10

PESD3V3L4UW

PESD5V0L4UW

1

MDB602

tp (ms)

PESDxL4UW series

26

handbook, halfpage

C

d

(pF)

22

18

14

10

10

6

05

1234

PESD3V3L4UW

PESD5V0L4UW

MDB601

VR (V)

Fig.2 Non-repetitive peak reverse current as a

function of pulse time (square pulse).

2

10

handbook, halfpage

P

ZSM
(W)

10

1

−2

10

PESD3V3L4UW

PESD5V0L4UW

−1

10

1

MDB603

tp (ms)

Tj=25°C; f = 1 MHz.

Fig.3 Diode capacitance as a function of reverse

voltage; typical values.

120

handbook, halfpage

I

pp

(%)

80

40

10

0

010

100 % Ipp; 8 µs

−t

e

20

50 % Ipp; 20 µs

MLE218

t (µs)

40

30

P

= V

ZSM

ZSMxIZSM

V

is the non-repetitive peak reverse voltage at I

ZSM

.

.

ZSM

Fig.4 Maximum non-repetitive peak reverse

power dissipation as a function of pulse
duration (square pulse).

2004 Apr 06 5

Fig.5 8/20 µs pulse waveform according to

IEC 61000-4-5.

Philips Semiconductors Product specification

Low capacitance quadruple ESD
protection array

handbook, full pagewidth

IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω

ESD TESTER 4 GHz DIGITAL

R

Z

C

Z

vertical scale = 200 V/div
horizontal scale = 50 ns/div

450 Ω

1
2
3

RG 223/U
50 Ω coax

GND2

5

D.U.T.
PESDxL4UW

4

10×

ATTENUATOR

PESD5V0L4UW

PESDxL4UW series

OSCILLOSCOPE

50 Ω

vertical scale = 5 V/div
horizontal scale = 50 ns/div

GND

unclamped +1 kV ESD voltage waveform
(IEC 1000-4-2 network)

GND

vertical scale = 200 V/div
horizontal scale = 50 ns/div

unclamped −1 kV ESD voltage waveform
(IEC 1000-4-2 network)

PESD3V3L4UW

GND1

clamped +1 kV ESD voltage waveform
(IEC 1000-4-2 network)

GND

clamped −1 kV ESD voltage waveform
(IEC 1000-4-2 network)

vertical scale = 5 V/div
horizontal scale = 50 ns/div

MDB605

Fig.6 ESD clamping test set-up and waveforms.

2004 Apr 06 6

Philips Semiconductors Product specification

Low capacitance quadruple ESD

PESDxL4UW series

protection array

PACKAGE OUTLINE

Plastic surface mounted package; 5 leads SOT665

D

S

YS

A

E

H

E

X

123

e

DIMENSIONS (mm are the original dimensions)

UNIT b

mm

A

0.6

0.5

0.27

0.17

p

0.18

0.08

cD

b

1

1.7

1.5

p

e

E

1.3

1.1

45

A

w

M

A

0 1 2 mm

scale

1.0

e1H

e

0.5

1.7

1.5

L

w

p

E

0.3

0.1y0.1

0.1

detail X

c

L

p

OUTLINE
VERSION

SOT665

IEC JEDEC EIAJ

REFERENCES

2004 Apr 06 7

EUROPEAN

PROJECTION

ISSUE DATE

01-01-04
01-08-27

Philips Semiconductors Product specification

Low capacitance quadruple ESD

PESDxL4UW series

protection array

DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective specification for product

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

III Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DATA SHEET

STATUS

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(1)

PRODUCT

STATUS

(2)(3)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

DEFINITION

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyother conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warranty that such applicationswillbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2004 Apr 06 8

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R76/02/pp9 Date of release: 2004 Apr 06 Document order number: 9397 750 12933

SCA76