PESD3V3L4UW
DISCRETE SEMICONDUCTORS
DATA SHEET
PESDxL4UW series
Low capacitance quadruple ESD protection array
Product specification |
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2004 Apr 06 |
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Supersedes data of 2003 Aug 15 |
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Philips Semiconductors |
Product specification |
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Low capacitance quadruple ESD
PESDxL4UW series
protection array
FEATURES
∙Uni-directional ESD protection of four lines or bi-directional ESD protection of 3 lines
∙Reverse standoff voltage: 3.3 and 5 V
∙Low diode capacitance
∙Ultra low leakage current
∙Ultra small SOT665 surface mount package
∙ESD protection >20 kV
∙IEC 61000-4-2; level 4 (ESD); 15 kV (air) or 8 kV (contact).
APPLICATIONS
∙Cellular handsets and accessories
∙Portable electronics
∙Computers and peripherals
∙Communication systems
∙Audio and video equipment.
MARKING
TYPE NUMBER |
MARKING CODE |
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PESD3V3L4UW |
A2 |
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PESD5V0L4UW |
A1 |
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DESCRIPTION
Low capacitance quadruple ESD protection array in a five pad SOT665 ultra small plastic package designed to protect up to four transmission or data lines from ElectroStatic Discharge (ESD) damage.
PINNING
PIN |
DESCRIPTION |
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1 |
cathode 1 |
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2 |
common anode |
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3 |
cathode 2 |
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4 |
cathode 3 |
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5 |
cathode 4 |
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5 4
handbook, halfpage
1 2 3
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4 |
1 |
2 |
3 |
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MDB678 |
Fig.1 Simplified outline (SOT665) and symbol.
ORDERING INFORMATION
TYPE NUMBER |
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PACKAGE |
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NAME |
DESCRIPTION |
VERSION |
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PESD3V3L4UW |
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plastic surface mounted package; 5 leads |
SOT665 |
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PESD5V0L4UW |
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2004 Apr 06 |
2 |
Philips Semiconductors |
Product specification |
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Low capacitance quadruple ESD
PESDxL4UW series
protection array
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Ipp |
peak pulse current |
8/20 μs; notes 1 and 2 |
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PESD3V3L4UW |
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− |
3 |
A |
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PESD5V0L4UW |
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− |
2.5 |
A |
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Ppp |
peak pulse power |
8/20 μs; notes 1 and 2 |
− |
30 |
W |
IFSM |
non-repetitive peak forward |
tp = 1 ms; square pulse |
− |
3.5 |
A |
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current |
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IZSM |
non-repetitive peak reverse |
tp = 1 ms; square pulse |
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current |
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PESD3V3L4UW |
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0.9 |
A |
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PESD5V0L4UW |
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− |
0.8 |
A |
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Ptot |
total power dissipation |
Tamb = 25 °C; note 3 |
− |
250 |
mW |
PZSM |
non-repetitive peak reverse |
tp = 1 ms; square pulse; see Fig.4 |
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6 |
W |
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power dissipation |
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Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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150 |
°C |
ESD |
electrostatic discharge |
IEC 61000-4-2 (contact discharge) |
20 |
− |
kV |
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HBM MIL-Std 883 |
10 |
− |
kV |
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Notes
1.Non-repetitive current pulse 8/20 μs exponentially decaying waveform see Fig.5.
2.Pins 1, 3, 4 or 5 to pin 2.
3.Device mounted on standard printed-circuit board.
ESD standards compliance
IEC 61000-4-2, level 4 (ESD) |
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>15 kV (air); >8 kV (contact) |
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HBM MIL-Std 883, class 3 |
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>4 kV |
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THERMAL CHARACTERISTICS |
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SYMBOL |
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PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth(j-a) |
thermal resistance from junction to ambient |
all diodes loaded |
370 |
K/W |
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Rth(j-sp) |
thermal resistance from junction to solder point |
one diode loaded; note 1 |
135 |
K/W |
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all diodes loaded; note 1 |
125 |
K/W |
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Notes
1. Solder point of common anode (pin 2).
2004 Apr 06 |
3 |
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