Philips PESDxL4UW Technical data

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PESDxL4UW series

Low capacitance quadruple ESD protection array

Product speciﬁcation Supersedes data of 2003 Aug 15

2004 Apr 06

Philips Semiconductors Product speciﬁcation

Low capacitance quadruple ESD protection array

FEATURES

• Uni-directional ESD protection of four lines or bi-directional ESD protection of 3 lines

• Reverse standoff voltage: 3.3 and 5 V

• Low diode capacitance

• Ultra low leakage current

• Ultra small SOT665 surface mount package

• ESD protection >20 kV

• IEC 61000-4-2; level 4 (ESD); 15 kV (air) or

8 kV (contact).

APPLICATIONS

• Cellular handsets and accessories

• Portable electronics

• Computers and peripherals

• Communication systems

• Audio and video equipment.

PESDxL4UW series

DESCRIPTION

Low capacitance quadrupleESD protection array in a five pad SOT665 ultra small plastic package designed to protect up to four transmission or data lines from ElectroStatic Discharge (ESD) damage.

PINNING

PIN DESCRIPTION

1 cathode 1 2 common anode 3 cathode 2 4 cathode 3 5 cathode 4

handbook, halfpage

MARKING

TYPE NUMBER MARKING CODE

PESD3V3L4UW A2

123

Fig.1 Simplified outline (SOT665) and symbol.

123

MDB678

PESD5V0L4UW A1

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

PESD3V3L4UW − plastic surface mounted package; 5 leads SOT665 PESD5V0L4UW

2004 Apr 06 2

Philips Semiconductors Product speciﬁcation

Low capacitance quadruple ESD

PESDxL4UW series

protection array

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

FSM

ZSM

tot

ZSM

stg

ESD electrostatic discharge IEC 61000-4-2 (contact discharge) 20 − kV

peak pulse current 8/20 µs; notes 1 and 2

PESD3V3L4UW − 3A

PESD5V0L4UW − 2.5 A peak pulse power 8/20 µs; notes 1 and 2 − 30 W non-repetitive peak forward

tp= 1 ms; square pulse − 3.5 A

current non-repetitive peak reverse

tp= 1 ms; square pulse

current

PESD3V3L4UW − 0.9 A

PESD5V0L4UW − 0.8 A total power dissipation T non-repetitive peak reverse

=25°C; note 3 − 250 mW

amb

tp= 1 ms; square pulse; see Fig.4 − 6W

power dissipation storage temperature −65 +150 °C junction temperature − 150 °C

HBM MIL-Std 883 10 − kV

Notes

1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform see Fig.5.

2. Pins 1, 3, 4 or 5 to pin 2.

3. Device mounted on standard printed-circuit board.

ESD standards compliance

IEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact) HBM MIL-Std 883, class 3 >4 kV

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R R

th(j-a) th(j-sp)

thermal resistance from junction to ambient all diodes loaded 370 K/W thermal resistance from junction to solder point one diode loaded; note 1 135 K/W

all diodes loaded; note 1 125 K/W

Notes

1. Solder point of common anode (pin 2).

2004 Apr 06 3

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