Philips PESDxL4UG Technical data

7

查询PESD3V3L4UG供应商

DISCRETE SEMICONDUCTORS

DATA SH EET

e

MBD12

PESDxL4UG series

Low capacitance quadruple ESD
protection diode array in SOT353
package

Product specification 2004 Mar 23

Philips Semiconductors Product specification

Low capacitance quadruple ESD
protection diode array in SOT353 package

FEATURES

• Uni-directional ESD protection of up to four lines

• Low diode capacitance

• Maximum peak pulse power: Ppp= 30 W at tp= 8/20µs

• Low clamping voltage: V

• Ultra low leakage current: IRM= 5 nA at V

= 12 V at Ipp=3A

CL(R)

RWM

=5V

• ESD protection > 20 kV

• IEC 61000-4-2; level 4 (ESD).

APPLICATIONS

• Cellular handsets and accessories

• Portable electronics

• Computers and peripherals

• Communications systems

• Audio and video equipment.

DESCRIPTION

ESD protectiondiode arrays designed to protect up to four
transmissions or data lines from ElectroStatic Discharge
(ESD) damage and other transients.

QUICK REFERENCE DATA

SYMBOL PARAMETER VALUE UNIT

V

C

PINNING

PESDxL4UG series

RWM

d

PIN DESCRIPTION

reverse standoff voltage

PESD3V3L4UG 3.3 V
PESD5V0L4UG 5 V

diode capacitance

PESD3V3L4UG 22 pF
PESD5V0L4UG 16 pF

number of protected lines 4

1 cathode 1
2 common anode
3 cathode 2
4 cathode 3
5 cathode 4

MARKING

TYPE NUMBER MARKING

PESD3V3L4UG L1
PESD5V0L4UG L2

handbook, halfpage

5

4

1
3
4
5

31

2

2

MGT580

Fig.1 Simplified outline (SOT353) and symbol.

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

PESD3V3L4UG − plastic surface mounted package; 5 leads SOT353
PESD5V0L4UG − plastic surface mounted package; 5 leads SOT353

2004 Mar 23 2

Philips Semiconductors Product specification

Low capacitance quadruple ESD

PESDxL4UG series

protection diode array in SOT353 package

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

I

pp

P
I

FSM

I

ZSM

P
P

T
T
T

pp

tot
ZSM

stg
j
amb

peak pulse current 8/20 µs; notes 1 and 2

PESD3V3L4UG − 3A

PESD5V0L4UG − 2.5 A
peak pulse power 8/20 µs; notes 1 and 2 − 30 W
non-repetitive peak forward

tp= 1 ms; square pulse − 3.5 A

current
non-repetitive peak reverse

tp= 1 ms; square pulse

current

PESD3V3L4UG − 0.9 A

PESD5V0L4UG − 0.8 A
total power dissipation T
non-repetitivepeak reversepower

=25°C; note 3 − 300 mW

amb

tp= 1 ms; square pulse; see Fig.4 − 6W

dissipation
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Notes

1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Fig.5.

2. Between any of pins 1, 3, 4 or 5 and pin 2.

3. Device mounted on standard printed-circuit board.

ESD maximum ratings

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Per diode

ESD electrostatic discharge capability IEC 61000-4-2 (contact

20 kV

discharge); notes 1 and 2
HBM MIL-Std 883 10 kV

Notes

1. Device stressed with ten non-repetitive Electrostatic Discharge (ESD) pulses.

2. Measured from any of pins 1, 3, 4, or 5 to pin 2.

ESD standards compliance

STANDARD CONDITION

IEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact)
HBM MIL-Std 883, class 3 >4 kV

2004 Mar 23 3

Philips Semiconductors Product specification

Low capacitance quadruple ESD

PESDxL4UG series

protection diode array in SOT353 package

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

R

th(j-s)

Note

1. Solder point of common anode (pin 2).

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per diode

V

F

I

RM

V

CL(R)

V

RWM

V

BR

r

diff

C

d

thermal resistance from junction to ambient all diodes loaded 410 K/W
thermal resistance from junction to solder point one diode loaded; note 1 200 K/W

all diodes loaded; note 1 185 K/W

forward voltage IF= 200 mA − 1 1.2 V
reverse leakage current

PESD3V3L4UG V
PESD5V0L4UG V

= 3.3 V − 75 300 nA

RWM

=5V − 525nA

RWM

clamping voltage

PESD3V3L4UG Ipp= 1 A; notes 1 and 2 −−8V

Ipp= 3 A; notes 1 and 2 −−12 V

PESD5V0L4UG Ipp= 1 A; notes 1 and 2 −−10 V

Ipp= 2.5 A; notes 1 and 2 −−13 V

reverse stand-off voltage

PESD3V3L4UG −−3.3 V
PESD5V0L4UG −−5V

breakdown voltage IZ=1mA

PESD3V3L4UG 5.32 5.6 5.88 V
PESD5V0L4UG 6.46 6.8 7.14 V

differential resistance IR=1mA

PESD3V3L4UG −−200 Ω
PESD5V0L4UG −−100 Ω

diode capacitance

PESD3V3L4UG VR= 0 V; f = 1 MHz − 22 28 pF

VR= 5 V; f = 1 MHz − 12 17 pF

PESD5V0L4UG VR= 0 V; f = 1 MHz − 16 19 pF

VR= 5 V; f = 1 MHz − 811pF

Notes

1. Non-repetitive current pulse 8 × 20 ms exponentially decay waveform; see Fig.5.

2. Between any of pins 1, 3, 4 or 5 and pin 2.

2004 Mar 23 4

Philips Semiconductors Product specification

Low capacitance quadruple ESD
protection diode array in SOT353 package

26

handbook, halfpage

C

d

(pF)

22

18

14

10

6

05

PESD3V3L4UG

PESD5V0L4UG

1234

MCE657

VR (V)

10

handbook, halfpage

I

ZSM

(A)

1

−1

10

−2

10

PESDxL4UG series

MCE658

PESD3V3L4UG

PESD5V0L4UG

−1

10

1

tp (ms)

10

Fig.2 Diode capacitance as a function of reverse

voltage; typical values.

2

10

handbook, halfpage

P

ZSM
(W)

10

1

−2

10

PESD3V3L4UG

PESD5V0L4UG

−1

10

1

MCE659

tp (ms)

Fig.3 Maximum non-repetitive peak reverse

current as a function of pulse time.

120

handbook, halfpage

I

pp

(%)

80

40

10

0

010

100 % Ipp; 8 µs

−t

e

20

50 % Ipp; 20 µs

MLE218

t (µs)

40

30

Fig.4 Maximum non-repetitive peak reverse

power dissipation as a function of pulse
duration (square pulse).

2004 Mar 23 5

Fig.5 8/20 µs pulse waveform according to

IEC 61000-4-5.

Philips Semiconductors Product specification

Low capacitance quadruple ESD
protection diode array in SOT353 package

ESD TESTER DIGITIZING

R

Z

C

Z

IEC 61000-4-2 network

= 150 pF; RZ = 330 Ω

C

Z

450 Ω

D.U.T.: PESDxL4UG

vertical scale = 200 V/div
horizontal scale = 50 ns/div

RG 223/U
50 Ω coax

GND2

PESDxL4UG series

10×

ATTENUATOR

note 1

Note 1: attenuator is only used for open
socket high voltage measurements

PESD5V0L4UG

OSCILLOSCOPE

50 Ω

vertical scale = 5 V/div
horizontal scale = 50 ns/div

GND

unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)

GND

vertical scale = 200 V/div
horizontal scale = 50 ns/div

unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)

PESD3V3L4UG

GND1

clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)

GND

clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)

vertical scale = 5 V/div
horizontal scale = 50 ns/div

mce656

Fig.6 ESD clamping test set-up and waveforms.

2004 Mar 23 6

Philips Semiconductors Product specification

Low capacitance quadruple ESD

PESDxL4UG series

protection diode array in SOT353 package

PACKAGE OUTLINE

Plastic surface mounted package; 5 leads SOT353

D

y

E

H

E

AB

45

X

v

M

A

132

e

DIMENSIONS (mm are the original dimensions)

A

1

mm

OUTLINE
VERSION

SOT353

1.1

0.8

A

max

0.1

b

p

0.30

0.20

IEC JEDEC EIAJ

UNIT

b

1

0.25

0.10

p

e

cD

2.2

1.8

A

wB

M

0 1 2 mm

scale

(2)

E

1.35

1.15

REFERENCES

1.3

e

0.65

H

E

1

2.2

0.45

2.0

0.15

e

Q

A

1

L

detail X

L

Qywv

p

0.25

0.15

0.2 0.10.2

EUROPEAN

PROJECTION

c

p

ISSUE DATE

97-02-28SC-88A

2004 Mar 23 7

Philips Semiconductors Product specification

Low capacitance quadruple ESD

PESDxL4UG series

protection diode array in SOT353 package

DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective specification for product

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

III Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

3. For data sheets describingmultiple typenumbers, thehighest-level product status determines the data sheetstatus.

DATA SHEET

STATUS

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(1)

PRODUCT

STATUS

(2)(3)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

DEFINITION

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition Limiting valuesgiven are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or atany other conditionsabovethose giveninthe
Characteristics sectionsof the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation or warrantythatsuchapplications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto resultin personalinjury. Philips
Semiconductorscustomers using orsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2004 Mar 23 8

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R76/01/pp9 Date of release: 2004 Mar 23 Document order number: 9397 750 12226

SCA76