Philips PESDxL4UG Technical data

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PESDxL4UG series

Low capacitance quadruple ESD
protection diode array in SOT353
package

Product specification 2004 Mar 23

Philips Semiconductors Product specification

Low capacitance quadruple ESD
protection diode array in SOT353 package

FEATURES

• Uni-directional ESD protection of up to four lines

• Low diode capacitance

• Maximum peak pulse power: Ppp= 30 W at tp= 8/20µs

• Low clamping voltage: V

• Ultra low leakage current: IRM= 5 nA at V

= 12 V at Ipp=3A

CL(R)

RWM

=5V

• ESD protection > 20 kV

• IEC 61000-4-2; level 4 (ESD).

APPLICATIONS

• Cellular handsets and accessories

• Portable electronics

• Computers and peripherals

• Communications systems

• Audio and video equipment.

DESCRIPTION

ESD protectiondiode arrays designed to protect up to four
transmissions or data lines from ElectroStatic Discharge
(ESD) damage and other transients.

QUICK REFERENCE DATA

SYMBOL PARAMETER VALUE UNIT

V

C

PINNING

PESDxL4UG series

RWM

d

PIN DESCRIPTION

reverse standoff voltage

PESD3V3L4UG 3.3 V
PESD5V0L4UG 5 V

diode capacitance

PESD3V3L4UG 22 pF
PESD5V0L4UG 16 pF

number of protected lines 4

1 cathode 1
2 common anode
3 cathode 2
4 cathode 3
5 cathode 4

MARKING

TYPE NUMBER MARKING

PESD3V3L4UG L1
PESD5V0L4UG L2

handbook, halfpage

5

4

1
3
4
5

31

2

2

MGT580

Fig.1 Simplified outline (SOT353) and symbol.

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

PESD3V3L4UG − plastic surface mounted package; 5 leads SOT353
PESD5V0L4UG − plastic surface mounted package; 5 leads SOT353

2004 Mar 23 2

Philips Semiconductors Product specification

Low capacitance quadruple ESD

PESDxL4UG series

protection diode array in SOT353 package

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

I

pp

P
I

FSM

I

ZSM

P
P

T
T
T

pp

tot
ZSM

stg
j
amb

peak pulse current 8/20 µs; notes 1 and 2

PESD3V3L4UG − 3A

PESD5V0L4UG − 2.5 A
peak pulse power 8/20 µs; notes 1 and 2 − 30 W
non-repetitive peak forward

tp= 1 ms; square pulse − 3.5 A

current
non-repetitive peak reverse

tp= 1 ms; square pulse

current

PESD3V3L4UG − 0.9 A

PESD5V0L4UG − 0.8 A
total power dissipation T
non-repetitivepeak reversepower

=25°C; note 3 − 300 mW

amb

tp= 1 ms; square pulse; see Fig.4 − 6W

dissipation
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Notes

1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Fig.5.

2. Between any of pins 1, 3, 4 or 5 and pin 2.

3. Device mounted on standard printed-circuit board.

ESD maximum ratings

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Per diode

ESD electrostatic discharge capability IEC 61000-4-2 (contact

20 kV

discharge); notes 1 and 2
HBM MIL-Std 883 10 kV

Notes

1. Device stressed with ten non-repetitive Electrostatic Discharge (ESD) pulses.

2. Measured from any of pins 1, 3, 4, or 5 to pin 2.

ESD standards compliance

STANDARD CONDITION

IEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact)
HBM MIL-Std 883, class 3 >4 kV

2004 Mar 23 3