Philips PESDxL4UG Technical data
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PESDxL4UG series
Low capacitance quadruple ESD
protection diode array in SOT353
package
Product specification 2004 Mar 23
Philips Semiconductors Product specification
Low capacitance quadruple ESD
protection diode array in SOT353 package
FEATURES
• Uni-directional ESD protection of up to four lines
• Low diode capacitance
• Maximum peak pulse power: Ppp= 30 W at tp= 8/20µs
• Low clamping voltage: V
• Ultra low leakage current: IRM= 5 nA at V
= 12 V at Ipp=3A
CL(R)
RWM
=5V
• ESD protection > 20 kV
• IEC 61000-4-2; level 4 (ESD).
APPLICATIONS
• Cellular handsets and accessories
• Portable electronics
• Computers and peripherals
• Communications systems
• Audio and video equipment.
DESCRIPTION
ESD protectiondiode arrays designed to protect up to four
transmissions or data lines from ElectroStatic Discharge
(ESD) damage and other transients.
QUICK REFERENCE DATA
SYMBOL PARAMETER VALUE UNIT
V
C
PINNING
PESDxL4UG series
RWM
d
PIN DESCRIPTION
reverse standoff voltage
PESD3V3L4UG 3.3 V
PESD5V0L4UG 5 V
diode capacitance
PESD3V3L4UG 22 pF
PESD5V0L4UG 16 pF
number of protected lines 4
1 cathode 1
2 common anode
3 cathode 2
4 cathode 3
5 cathode 4
MARKING
TYPE NUMBER MARKING
PESD3V3L4UG L1
PESD5V0L4UG L2
handbook, halfpage
5
4
1
3
4
5
31
2
2
MGT580
Fig.1 Simplified outline (SOT353) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PESD3V3L4UG − plastic surface mounted package; 5 leads SOT353
PESD5V0L4UG − plastic surface mounted package; 5 leads SOT353
2004 Mar 23 2
Philips Semiconductors Product specification
Low capacitance quadruple ESD
PESDxL4UG series
protection diode array in SOT353 package
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
I
pp
P
I
FSM
I
ZSM
P
P
T
T
T
pp
tot
ZSM
stg
j
amb
peak pulse current 8/20 µs; notes 1 and 2
PESD3V3L4UG − 3A
PESD5V0L4UG − 2.5 A
peak pulse power 8/20 µs; notes 1 and 2 − 30 W
non-repetitive peak forward
tp= 1 ms; square pulse − 3.5 A
current
non-repetitive peak reverse
tp= 1 ms; square pulse
current
PESD3V3L4UG − 0.9 A
PESD5V0L4UG − 0.8 A
total power dissipation T
non-repetitivepeak reversepower
=25°C; note 3 − 300 mW
amb
tp= 1 ms; square pulse; see Fig.4 − 6W
dissipation
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Notes
1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Fig.5.
2. Between any of pins 1, 3, 4 or 5 and pin 2.
3. Device mounted on standard printed-circuit board.
ESD maximum ratings
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per diode
ESD electrostatic discharge capability IEC 61000-4-2 (contact
20 kV
discharge); notes 1 and 2
HBM MIL-Std 883 10 kV
Notes
1. Device stressed with ten non-repetitive Electrostatic Discharge (ESD) pulses.
2. Measured from any of pins 1, 3, 4, or 5 to pin 2.
ESD standards compliance
STANDARD CONDITION
IEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact)
HBM MIL-Std 883, class 3 >4 kV
2004 Mar 23 3
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