Philips PESDxL2UM Technical data
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M3D883
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PESDxL2UM series
Low capacitance double ESD
protection diode
Product specification 2003 Aug 05
Philips Semiconductors Product specification
Low capacitance double ESD protection diode PESDxL2UM series
FEATURES
• Uni-directional ESD protection of two lines or
bi-directional ESD protection of one line
• Reverse standoff voltage 3.3 and 5 V
• Low diode capacitance
• Ultra low leakage current
• Leadless ultra small SOT883 surface mount package
(1 × 0.6 × 0.5 mm)
• Board space 1.17 mm2 (approx. 10% of SOT23)
• ESD protection >15 kV
• IEC 61000-4-2; level 4 (ESD); 15 kV (air) or
8 kV (contact).
APPLICATIONS
• Cellular handsets and accessories
• Portable electronics
• Computers and peripherals
• Communication systems
• Audio and video equipment.
MARKING
TYPE NUMBER MARKING CODE
PESD3V3L2UM F2
PESD5V0L2UM F1
DESCRIPTION
Low capacitance ESD protection diode in a three pad
SOT883 leadless ultra small plastic package designed to
protect up to two transmission or data lines from
ElectroStatic Discharge (ESD) damage.
PINNING
PIN DESCRIPTION
1 cathode 1
2 cathode 2
3 common anode
handbook, halfpage
Top view
2
1
Bottom view
2
3
3
MLE220
1
Fig.1 Simplified outline (SOT883) and symbol.
2003 Aug 05 2
Philips Semiconductors Product specification
Low capacitance double ESD protection diode PESDxL2UM series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
I
pp
P
pp
I
FSM
I
ZSM
P
tot
P
ZSM
T
stg
T
j
ESD electrostatic discharge IEC 61000-4-2 (contact discharge) 15 − kV
peak pulse current 8/20 µs pulse; notes 1, 2 and 3
PESD3V3L2UM − 3A
PESD5V0L2UM − 2.5 A
peak pulse power 8/20 µs pulse; notes 1, 2 and 3 − 30 W
non-repetitive peak forward current tp= 1 ms; square pulse − 3.5 A
non-repetitive peak reverse current tp= 1 ms; square pulse
PESD3V3L2UM − 0.9 A
PESD5V0L2UM − 0.8 A
total power dissipation T
non-repetitive peak reverse power
=25°C; note 4 − 250 mW
amb
tp= 1 ms; square pulse; see Fig.4 − 6W
dissipation
storage temperature −65 +150 °C
junction temperature − 150 °C
HBM MIL-Std 883 10 − kV
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5.
2. Pins 1 and 3 or 2 and 3.
3. Pins 1 and 2.
4. Device mounted on standard printed-circuit board.
ESD standards compliance
IEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact)
HBM MIL-Std 883, class 3 >4 kV
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient all diodes loaded; note 1 500 K/W
one diode loaded; note 2 290 K/W
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.
2. FR4 single-sided copper 1 cm
2
.
2003 Aug 05 3
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