Philips PESDxL2BT Technical data
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PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes
in SOT23
Rev. 01 — 1 November 2005 Product data sheet
1. Product profile
1.1 General description
Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a
SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two
signal lines from the damage caused by ESD and other transients.
1.2 Features
■ ESD protection of two lines ■ Ultra low leakage current: IRM<90nA
■ Max. peak pulse power: PPP= 350 W ■ ESD protection up to 23 kV
■ Low clamping voltage: VCL=26V ■ IEC 61000-4-2, level 4 (ESD)
■ Small SMD plastic package ■ IEC 61000-4-5 (surge); IPP=15A
1.3 Applications
■ Computers and peripherals ■ Communication systems
■ Audio and video equipment ■ Portable electronics
■ Cellular handsets and accessories ■ Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
C
RWM
d
reverse standoff voltage
PESD3V3L2BT - - 3.3 V
PESD5V0L2BT - - 5.0 V
PESD12VL2BT - - 12 V
PESD15VL2BT - - 15 V
PESD24VL2BT - - 24 V
diode capacitance VR=0V;
f=1MHz
PESD3V3L2BT - 101 - pF
PESD5V0L2BT - 75 - pF
PESD12VL2BT - 19 - pF
PESD15VL2BT - 16 - pF
PESD24VL2BT - 11 - pF
Philips Semiconductors
2. Pinning information
Table 2: Pinning
Pin Description Simplified outline Symbol
1 cathode 1
2 cathode 2
3 double cathode
3. Ordering information
Table 3: Ordering information
Type number Package
PESD3V3L2BT - plastic surface mounted package; 3 leads SOT23
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
3
12
Name Description Version
1
3
2
006aaa155
4. Marking
Table 4: Marking codes
Type number Marking code
PESD3V3L2BT V3*
PESD5V0L2BT V4*
PESD12VL2BT V5*
PESD15VL2BT V6*
PESD24VL2BT V7*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
9397 750 14034 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 1 November 2005 2 of 14
[1]
Philips Semiconductors
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
PP
I
PP
T
j
T
amb
T
stg
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 3 or 2 to 3.
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
peak pulse power tp= 8/20 µs
PESD3V3L2BT - 350 W
PESD5V0L2BT - 350 W
PESD12VL2BT - 200 W
PESD15VL2BT - 200 W
PESD24VL2BT - 200 W
peak pulse current tp= 8/20 µs
PESD3V3L2BT - 15 A
PESD5V0L2BT - 13 A
PESD12VL2BT - 5 A
PESD15VL2BT - 5 A
PESD24VL2BT - 3 A
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
[1] [2]
[1] [2]
Table 6: ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
V
ESD
electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
[1] [2]
PESD3V3L2BT - 30 kV
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT - 23 kV
PESDxL2BT series HBM MIL-STD883 - 10 kV
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to 3 or 2 to 3.
Table 7: ESD standards compliance
ESD Standard Conditions
IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact)
HBM MIL-STD883, class 3 > 4 kV
9397 750 14034 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 1 November 2005 3 of 14
Philips Semiconductors
120
I
PP
(%)
100 % IPP; 8 µs
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
001aaa631
I
001aaa630
PP
100 %
90 %
80
40
0
0403010 20
−t
e
; 20 µs
50 % I
PP
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
10 %
tr = 0.7 ns to 1 ns
30 ns
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t
9397 750 14034 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 1 November 2005 4 of 14
Philips Semiconductors
6. Characteristics
Table 8: Characteristics
T
=25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
I
RM
V
BR
C
d
V
CL
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
reverse standoff voltage
PESD3V3L2BT - - 3.3 V
PESD5V0L2BT - - 5.0 V
PESD12VL2BT - - 12 V
PESD15VL2BT - - 15 V
PESD24VL2BT - - 24 V
reverse leakage current
PESD3V3L2BT V
PESD5V0L2BT V
PESD12VL2BT V
PESD15VL2BT V
PESD24VL2BT V
breakdown voltage IR=5mA
PESD3V3L2BT 5.8 6.4 6.9 V
PESD5V0L2BT 7.0 7.6 8.2 V
PESD12VL2BT 14.2 15.8 16.7 V
PESD15VL2BT 17.1 18.8 20.3 V
PESD24VL2BT 25.4 27.8 30.3 V
diode capacitance VR=0V;
PESD3V3L2BT - 101 - pF
PESD5V0L2BT - 75 - pF
PESD12VL2BT - 19 - pF
PESD15VL2BT - 16 - pF
PESD24VL2BT - 11 - pF
clamping voltage
PESD3V3L2BT IPP=1A - - 8 V
PESD5V0L2BT I
PESD12VL2BT I
PESD15VL2BT I
PESD24VL2BT I
= 3.3 V - 0.09 2 µA
RWM
= 5.0 V - 0.01 1 µA
RWM
=12V - <1 50 nA
RWM
=15V - <1 50 nA
RWM
=24V - <1 50 nA
RWM
f=1MHz
[1] [2]
=15A - - 26 V
I
PP
=1A - - 10 V
PP
=13A - - 28 V
I
PP
=1A - - 20 V
PP
=5A - - 37 V
I
PP
=1A - - 25 V
PP
=5A - - 44 V
I
PP
=1A - - 40 V
PP
=3A - - 70 V
I
PP
9397 750 14034 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 1 November 2005 5 of 14
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