Philips PESDxL2BT Technical data

查询PESD12VL2BT供应商

PESDxL2BT series

Low capacitance double bidirectional ESD protection diodes
in SOT23

Rev. 01 — 1 November 2005 Product data sheet

1. Product profile

1.1 General description

Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a
SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two
signal lines from the damage caused by ESD and other transients.

1.2 Features

■ ESD protection of two lines ■ Ultra low leakage current: IRM<90nA

■ Max. peak pulse power: PPP= 350 W ■ ESD protection up to 23 kV

■ Low clamping voltage: VCL=26V ■ IEC 61000-4-2, level 4 (ESD)

■ Small SMD plastic package ■ IEC 61000-4-5 (surge); IPP=15A

1.3 Applications

■ Computers and peripherals ■ Communication systems

■ Audio and video equipment ■ Portable electronics

■ Cellular handsets and accessories ■ Subscriber Identity Module (SIM) card

protection

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

C

RWM

d

reverse standoff voltage

PESD3V3L2BT - - 3.3 V
PESD5V0L2BT - - 5.0 V
PESD12VL2BT - - 12 V
PESD15VL2BT - - 15 V
PESD24VL2BT - - 24 V

diode capacitance VR=0V;

f=1MHz
PESD3V3L2BT - 101 - pF
PESD5V0L2BT - 75 - pF
PESD12VL2BT - 19 - pF
PESD15VL2BT - 16 - pF
PESD24VL2BT - 11 - pF

Philips Semiconductors

2. Pinning information

Table 2: Pinning

Pin Description Simplified outline Symbol

1 cathode 1
2 cathode 2
3 double cathode

3. Ordering information

Table 3: Ordering information

Type number Package

PESD3V3L2BT - plastic surface mounted package; 3 leads SOT23
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT

PESDxL2BT series

Low capacitance double bidirectional ESD protection diodes in SOT23

3

12

Name Description Version

1

3

2

006aaa155

4. Marking

Table 4: Marking codes

Type number Marking code

PESD3V3L2BT V3*
PESD5V0L2BT V4*
PESD12VL2BT V5*
PESD15VL2BT V6*
PESD24VL2BT V7*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

9397 750 14034 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 1 November 2005 2 of 14

[1]

Philips Semiconductors

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

P

PP

I

PP

T

j

T

amb

T

stg

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 3 or 2 to 3.

PESDxL2BT series

Low capacitance double bidirectional ESD protection diodes in SOT23

peak pulse power tp= 8/20 µs

PESD3V3L2BT - 350 W
PESD5V0L2BT - 350 W
PESD12VL2BT - 200 W
PESD15VL2BT - 200 W
PESD24VL2BT - 200 W

peak pulse current tp= 8/20 µs

PESD3V3L2BT - 15 A
PESD5V0L2BT - 13 A
PESD12VL2BT - 5 A
PESD15VL2BT - 5 A
PESD24VL2BT - 3 A

junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

[1] [2]

[1] [2]

Table 6: ESD maximum ratings

Symbol Parameter Conditions Min Max Unit

V

ESD

electrostatic discharge
voltage

IEC 61000-4-2
(contact discharge)

[1] [2]

PESD3V3L2BT - 30 kV
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT - 23 kV
PESDxL2BT series HBM MIL-STD883 - 10 kV

[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to 3 or 2 to 3.

Table 7: ESD standards compliance

ESD Standard Conditions

IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact)
HBM MIL-STD883, class 3 > 4 kV

9397 750 14034 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 1 November 2005 3 of 14

Philips Semiconductors

120

I

PP

(%)

100 % IPP; 8 µs

PESDxL2BT series

Low capacitance double bidirectional ESD protection diodes in SOT23

001aaa631

I

001aaa630

PP

100 %

90 %

80

40

0

0403010 20

−t

e

; 20 µs

50 % I

PP

t (µs)

Fig 1. 8/20 µs pulse waveform according to

IEC 61000-4-5

10 %

tr = 0.7 ns to 1 ns

30 ns

60 ns

Fig 2. ESD pulse waveform according to

IEC 61000-4-2

t

9397 750 14034 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 1 November 2005 4 of 14

Philips Semiconductors

6. Characteristics

Table 8: Characteristics

T

=25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

V

RWM

I

RM

V

BR

C

d

V

CL

PESDxL2BT series

Low capacitance double bidirectional ESD protection diodes in SOT23

reverse standoff voltage

PESD3V3L2BT - - 3.3 V
PESD5V0L2BT - - 5.0 V
PESD12VL2BT - - 12 V
PESD15VL2BT - - 15 V
PESD24VL2BT - - 24 V

reverse leakage current

PESD3V3L2BT V
PESD5V0L2BT V
PESD12VL2BT V
PESD15VL2BT V
PESD24VL2BT V

breakdown voltage IR=5mA

PESD3V3L2BT 5.8 6.4 6.9 V
PESD5V0L2BT 7.0 7.6 8.2 V
PESD12VL2BT 14.2 15.8 16.7 V
PESD15VL2BT 17.1 18.8 20.3 V
PESD24VL2BT 25.4 27.8 30.3 V

diode capacitance VR=0V;

PESD3V3L2BT - 101 - pF
PESD5V0L2BT - 75 - pF
PESD12VL2BT - 19 - pF
PESD15VL2BT - 16 - pF
PESD24VL2BT - 11 - pF

clamping voltage

PESD3V3L2BT IPP=1A - - 8 V

PESD5V0L2BT I

PESD12VL2BT I

PESD15VL2BT I

PESD24VL2BT I

= 3.3 V - 0.09 2 µA

RWM

= 5.0 V - 0.01 1 µA

RWM

=12V - <1 50 nA

RWM

=15V - <1 50 nA

RWM

=24V - <1 50 nA

RWM

f=1MHz

[1] [2]

=15A - - 26 V

I

PP

=1A - - 10 V

PP

=13A - - 28 V

I

PP

=1A - - 20 V

PP

=5A - - 37 V

I

PP

=1A - - 25 V

PP

=5A - - 44 V

I

PP

=1A - - 40 V

PP

=3A - - 70 V

I

PP

9397 750 14034 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 1 November 2005 5 of 14

Philips Semiconductors

PESDxL2BT series

Low capacitance double bidirectional ESD protection diodes in SOT23

Table 8: Characteristics

T

=25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

r

dif

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 3 or 2 to 3.

differential resistance IR=1mA

PESD3V3L2BT - - 400 Ω
PESD5V0L2BT - - 80 Ω
PESD12VL2BT - - 200 Ω
PESD15VL2BT - - 225 Ω
PESD24VL2BT - - 300 Ω

…continued

9397 750 14034 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 1 November 2005 6 of 14

Philips Semiconductors

PESDxL2BT series

Low capacitance double bidirectional ESD protection diodes in SOT23

3

10

006aaa531

(µs)

t

p

4

4

10

P

PP

(W)

3

10

(1)

2

10

10

110

T

=25°C

amb

(2)

10 10

2

(1) PESD3V3L2BT and PESD5V0L2BT
(2) PESD12VL2BT, PESD15VL2BT, PESD24VL2BT

Fig 3. Peak pulse power as a function of exponential

pulse duration t

110

C

d

(pF)

100

; typical values

p

006aaa067

001aaa193

Tj (°C)

P

PP

P

PP(25 °C)

1.2

0.8

0.4

0

0 20015050 100

Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical values

006aaa068

C

(pF)

20

d

16

90

80

70

60

50

054231

T

=25°C; f = 1 MHz

amb

(1)

(2)

VR (V)

(1) PESD3V3L2BT
(2) PESD5V0L2BT

Fig 5. Diode capacitance as a function of reverse

voltage; typical values

12

8

4

0

0252010 155

T

=25°C; f = 1 MHz

amb

(1)

(2)

(3)

VR (V)

(1) PESD12VL2BT
(2) PESD15VL2BT
(3) PESD24VL2BT

Fig 6. Diode capacitance as a function of reverse

voltage; typical values

9397 750 14034 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 1 November 2005 7 of 14

Philips Semiconductors

10

PESDxL2BT series

Low capacitance double bidirectional ESD protection diodes in SOT23

I

PP

006aaa069

I

RM

I

RM(25°C)

10

1

−1

−100 150100050−50

(1)

Tj (°C)

(1) PESD3V3L2BT, PESD5V0L2BT

PESD12VL2BT, PESD15VL2BT and
PESD24VL2BT: IRM< 20 nA; Tj= 150 °C

Fig 7. Relative variation of reverse leakage current as

a function of junction temperature; typical
values

I

R

−VCL−VBR−V

RWM

I

RM

−I

RM

−I

R

−I

PP

V

RWM

−

+

Fig 8. V-I characteristics for a bidirectional ESD

protection diode

V

V

BR

006aaa676

CL

9397 750 14034 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 1 November 2005 8 of 14

Philips Semiconductors

PESDxL2BT series

Low capacitance double bidirectional ESD protection diodes in SOT23

ESD TESTER

R

Z

C

Z

IEC 61000-4-2 network

= 150 pF; RZ = 330 Ω

C

Z

GND

unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)

450 Ω

D.U.T.

(Device

Under

Test)

vertical scale = 200 V/div
horizontal scale = 50 ns/div

RG 223/U
50 Ω coax

vertical scale = 20 V/div; horizontal scale = 50 ns/div

GND

GND

GND

GND

GND

clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)

10×

ATTENUATOR

4 GHz DIGITAL

OSCILLOSCOPE

50 Ω

PESD24VL2BT

PESD15VL2BT

PESD12VL2BT

PESD5V0L2BT

PESD3V3L2BT

GND

vertical scale = 200 V/div
horizontal scale = 50 ns/div

unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)

Fig 9. ESD clamping test setup and waveforms

vertical scale = 20 V/div; horizontal scale = 50 ns/div

GND

GND

GND

GND

GND

clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)

PESD3V3L2BT

PESD5V0L2BT

PESD12VL2BT

PESD15VL2BT

PESD24VL2BT

006aaa162

9397 750 14034 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 1 November 2005 9 of 14

Philips Semiconductors

Low capacitance double bidirectional ESD protection diodes in SOT23

7. Application information

The PESDxL2BT series is designed for the protection of two bidirectional signal lines from
the damage caused by ESD and surge pulses. The PESDxL2BT series may be used on
lines where the signal polarities are above and below ground. The PESDxL2BT series
provides a surge capability of up to 350 W per line for an 8/20 µs waveform.

Fig 10. Application diagram

PESDxL2BT series

line 1 to be protected
line 2 to be protected

PESDxL2BT

GND

006aaa163

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:

1. Place the PESDxL2BT as close to the input terminal or connector as possible.

2. The path length between the PESDxL2BT and the protected line should be
minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.

9397 750 14034 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 1 November 2005 10 of 14

Philips Semiconductors

8. Package outline

PESDxL2BT series

Low capacitance double bidirectional ESD protection diodes in SOT23

Fig 11. Package outline SOT23 (TO-236AB)

9. Packing information

Table 9: Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PESD3V3L2BT SOT23 4 mm pitch, 8 mm tape and reel -215 -235
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT

2.5

2.1

3.0

2.8

3

0.45

0.15

1.4

1.2

12

0.48

1.9

0.38

1.1

0.9

0.15

0.09

04-11-04Dimensions in mm

[1]

3000 10000

[1] For further information and the availability of packing methods, seeSection 15.

9397 750 14034 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 1 November 2005 11 of 14

Philips Semiconductors

Low capacitance double bidirectional ESD protection diodes in SOT23

PESDxL2BT series

10. Revision history

Table 10: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

PESDXL2BT_SER_1 20051101 Product data sheet - 9397 750 14034 -

9397 750 14034 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 1 November 2005 12 of 14

Philips Semiconductors

11. Data sheet status

PESDxL2BT series

Low capacitance double bidirectional ESD protection diodes in SOT23

Level Data sheet status

I Objective data Development This data sheet contains data from the objective specification for product development. Philips

II Preliminary data Qualification This datasheet contains datafrom thepreliminary specification.Supplementary data willbe published

III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

12. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representationor warranty that such applications willbe suitable for
the specified use without further testing or modification.

[2] [3]

Definition

Semiconductors reserves the right to change the specification in any manner without notice.

at alater date. Philips Semiconductorsreserves theright to change thespecification without notice, in
order to improve the design and supply the best possible product.

right to makechanges at any timein order to improvethe design, manufacturing andsupply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, andmakes norepresentations orwarranties thatthese products are
free frompatent, copyright, ormask work rightinfringement, unless otherwise
specified.

14. Trademarks

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors

Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.

15. Contact information

For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [e-mail]

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Product data sheet Rev. 01 — 1 November 2005 13 of 14

Philips Semiconductors

Low capacitance double bidirectional ESD protection diodes in SOT23

16. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Application information. . . . . . . . . . . . . . . . . . 10

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

9 Packing information. . . . . . . . . . . . . . . . . . . . . 11

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

15 Contact information . . . . . . . . . . . . . . . . . . . . 13

PESDxL2BT series

© Koninklijke Philips Electronics N.V. 2005

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotationor contract, is believed to be accurateand reliable andmay
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 1 November 2005

Document number: 9397 750 14034