Philips PESDxL1BA Technical data
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PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in
SOD323
Rev. 01 — 4 October 2004 Product data sheet
1. Product profile
1.1 General description
Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323
(SC-76) SMD plastic package designed to protect one signal line from the damage
caused by ESD and other transients.
1.2 Features
■ Bidirectional ESD protection of one line ■ ESD protection > 23 kV
■ Max. peak pulse power: Ppp = 500 W ■ IEC 61000-4-2, level 4 (ESD)
■ Low clamping voltage: V
■ Ultra low leakage current: IRM < 0.09 µA ■ Very small SMD plastic package.
= 26 V ■ IEC 61000-4-5 (surge); Ipp = 18 A
(CL)R
1.3 Applications
■ Computers and peripherals ■ Data lines
■ Communication systems ■ CAN bus protection.
■ Audio and video equipment
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
C
RWM
d
reverse stand-off voltage
PESD3V3L1BA - - 3.3 V
PESD5V0L1BA - - 5.0 V
PESD12VL1BA - - 12 V
PESD15VL1BA - - 15 V
PESD24VL1BA - - 24 V
diode capacitance VR = 0 V;
f=1MHz
PESD3V3L1BA - 101 - pF
PESD5V0L1BA - 75 - pF
PESD12VL1BA - 19 - pF
PESD15VL1BA - 16 - pF
PESD24VL1BA - 11 - pF
Philips Semiconductors
2. Pinning information
Table 2: Pinning
Pin Description Simplified outline Symbol
1 cathode 1
2 cathode 2
3. Ordering information
Table 3: Ordering information
Type number Package
PESDxL1BA series SC-76 plastic surface mounted package; 2 leads SOD323
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
21
Name Description Version
21
sym045
4. Marking
Table 4: Marking codes
Type number Marking code
PESD3V3L1BA AB
PESD5V0L1BA AC
PESD12VL1BA AD
PESD15VL1BA AE
PESD24VL1BA AF
9397 750 13595 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 01 — 4 October 2004 2 of 15
Philips Semiconductors
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
pp
I
pp
T
j
T
amb
T
stg
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
peak pulse power 8/20 µs
PESD3V3L1BA - 500 W
PESD5V0L1BA - 500 W
PESD12VL1BA - 200 W
PESD15VL1BA - 200 W
PESD24VL1BA - 200 W
peak pulse current 8/20 µs
PESD3V3L1BA - 18 A
PESD5V0L1BA - 15 A
PESD12VL1BA - 5 A
PESD15VL1BA - 5 A
PESD24VL1BA - 3 A
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
[1]
[1]
Table 6: ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
ESD electrostatic discharge capability IEC 61000-4-2
[1]
(contact discharge)
PESD3V3L1BA - 30 kV
PESD5V0L1BA - 30 kV
PESD12VL1BA - 30 kV
PESD15VL1BA - 30 kV
PESD24VL1BA - 23 kV
PESDxL1BA series HBM MIL-Std 883 - 10 kV
[1] Device stressed with ten non-repetitive ESD pulses; see Figure 2.
Table 7: ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD);
Figure 2 > 15 kV (air); > 8 kV (contact)
HBM MIL-Std 883; class 3 > 4 kV
9397 750 13595 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 01 — 4 October 2004 3 of 15
Philips Semiconductors
120
I
(%)
pp
100 % Ipp; 8 µs
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
001aaa631
I
001aaa630
pp
100 %
90 %
80
40
0
0403010 20
−t
e
; 20 µs
50 % I
pp
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5.
10 %
tr = 0.7 to 1 ns
30 ns
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2.
t
9397 750 13595 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 01 — 4 October 2004 4 of 15
Philips Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
6. Characteristics
Table 8: Characteristics
T
= 25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
V
I
RM
V
C
V
RWM
(BR)
d
(CL)R
reverse stand-off voltage
PESD3V3L1BA - - 3.3 V
PESD5V0L1BA - - 5.0 V
PESD12VL1BA - - 12 V
PESD15VL1BA - - 15 V
PESD24VL1BA - - 24 V
reverse leakage current see Figure 7
PESD3V3L1BA V
PESD5V0L1BA V
PESD12VL1BA V
PESD15VL1BA V
PESD24VL1BA V
= 3.3 V - 0.09 2 µA
RWM
= 5.0 V - 0.01 1 µA
RWM
= 12 V - < 1 50 nA
RWM
= 15 V - < 1 50 nA
RWM
= 24 V - < 1 50 nA
RWM
breakdown voltage IR = 5 mA
PESD3V3L1BA 5.8 6.4 6.9 V
PESD5V0L1BA 7.0 7.6 8.2 V
PESD12VL1BA 14.2 15.9 16.7 V
PESD15VL1BA 17.1 18.9 20.3 V
PESD24VL1BA 25.4 27.8 30.3 V
diode capacitance VR = 0 V; f = 1 MHz;
see
Figure 5 and 6
PESD3V3L1BA - 101 - pF
PESD5V0L1BA - 75 - pF
PESD12VL1BA - 19 - pF
PESD15VL1BA - 16 - pF
PESD24VL1BA - 11 - pF
clamping voltage
[1]
PESD3V3L1BA Ipp = 1 A - - 8 V
= 18 A - - 26 V
I
pp
PESD5V0L1BA I
PESD12VL1BA I
PESD15VL1BA I
PESD24VL1BA I
= 1 A - - 10 V
pp
= 15 A - - 33 V
I
pp
= 1 A - - 20 V
pp
= 5A - - 37 V
I
pp
= 1 A - - 25 V
pp
= 5 A - - 44 V
I
pp
= 1 A - - 40 V
pp
= 3 A - - 70 V
I
pp
9397 750 13595 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 01 — 4 October 2004 5 of 15
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