Philips PESD5V2S18U Technical data
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M3D574
PESD5V2S18U
ESD protection array
Product specification 2003 Apr 28
Philips Semiconductors Product specification
ESD protection array PESD5V2S18U
FEATURES
• Uni-directional ESD protection of
up to 18 lines
• Maximum peak reverse power:
PPP= 100 W at tp= 8/20 µs
• Low clamping voltage:
VCL= 12 V max. at I
ZSM
=10A
• Low leakage current:
IR= 100 nA typ. at V
RWM
= 5.2 V
• IEC 61000-4-2, level 4 (ESD);
15 kV (air) and 8 kV (contact).
APPLICATIONS
• Printer parallel ports
• Computers and peripherals
• Communication systems.
DESCRIPTION
Monolithic ESD protection device
designed to protect up to
18 transmissionordatalinesfromthe
damage caused by electrostatic
discharge (ESD) and surge pulses.
PINNING
PIN DESCRIPTION
1 to 5 cathode (k1 to k5)
6 and 16 common anode (a1; a2)
7 to 15 cathode (k6 to k14)
17 to 20 cathode (k15 to k18)
handbook, 4 columns
1
10
Fig.1 Simplified outline (SSOP20; SOT339-1) and symbol.
1
20
11
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
MHC510
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
PP
P
PP
non-repetitive peak reverse current tp= 8/20 µs − 10 A
non-repetitive peak reverse power
tp= 8/20 µs − 100 W
dissipation
T
stg
T
j
storage temperature −65 +150 °C
junction temperature −65 +150 °C
electrostatic discharge voltage IEC 61000-4-2 (contact discharge) 30 − kV
HBM MIL-Std 883 10 − kV
ESD standards compliance
IEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact)
HBM MIL-Std 883, class 3 >4 kV
2003 Apr 28 2
Philips Semiconductors Product specification
ESD protection array PESD5V2S18U
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Refer to SOT339-1 standard mounting conditions.
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
RWM
I
R
V
CL
V
BR
r
diff
C
d
thermal resistance from junction to
one or more diodes loaded 135 K/W
ambient
crest working reverse
−−5.2 V
voltage
reverse current V
clamping voltage I
= 5.2 V − 0.1 1 µA
RWM
= 3 A; tp= 8/20 µs; see Fig.5 −−8V
ZSM
I
= 10 A; tp= 8/20 µs; see Fig.5 −−12 V
ZSM
breakdown voltage IZ= 5 mA 6.4 6.8 7.2 V
differential resistance IZ=1mA −−40 Ω
I
=5mA −−8Ω
Z
diode capacitance VR= 0; f = 1 MHz; see Fig.4 − 100 − pF
2003 Apr 28 3
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