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PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
in SOT23 package
Rev. 02 — 27 May 2004 Product data sheet
1. Product profile
1.1 General description
Low capacitance bi-directional double ESD protection diode in the small SOT23 plastic
package designed to protect 2 data lines from the damage caused by Electro Static
Discharge (ESD) and other transients.
1.2 Features
■ Bi-directional ESD protection of 2 lines
■ Low diode capacitance
■ Max. peak pulse power: Ppp = 130 W at tp = 8/20 µs
■ Low clamping voltage: V
■ Ultra low leakage current: IRM = 5 nA at V
■ ESD protection > 30 kV
■ IEC 61000-4-2; level 4 (ESD)
■ IEC-61000-4-5 (surge); Ipp = 12 A at tp = 8/20 µs.
= 14 V at Ipp = 12 A
CL(R)
RWM
= 5 V
1.3 Applications
■ Cellular handsets and accessories
■ Portable electronics
■ Computers and peripherals
■ Communication systems
■ Audio and video equipment.
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
C
RWM
d
reverse stand-off voltage - 5 - V
diode capacitance f = 1 MHz;
V
=0V
R
number of protected lines - 2 -
-35-pF
Philips Semiconductors
2. Pinning information
Table 2: Discrete Pinning
Pin Description Simplified outline Symbol
1 cathode 1
2 cathode 2
3 double cathode
3. Ordering information
Table 3: Ordering information
Type number Package
PESD5V0S2BT - plastic surface mounted package; 3 leads SOT23
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
3
1 2
SOT23
Name Description Version
1
3
2
sym031
4. Marking
Table 4: Marking
Type number Marking code
PESD5V0S2BT *G5
[1] * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
P
pp
I
pp
T
j
T
amb
T
stg
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.
[2] Measured between pins 1 to 3 or pin 2 to 3.
[1]
peak pulse power 8/20 µs pulse
peak pulse current 8/20 µs pulse
[1] [2]
- 130 W
[1] [2]
-12A
junction temperature - 150 °C
operating ambient
−65 +150 °C
temperature
storage temperature −65 +150 °C
9397 750 13344 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 27 May 2004 2 of 11
Philips Semiconductors
Table 6: ESD maximum ratings
Symbol Parameter Conditions Value Unit
ESD electro static
[1] Device stressed with ten non-repetitive Electro Static Discharge (ESD) pulses; see Figure 2.
[2] Measured between pins 1 to 3 or pin 2 to 3.
Table 7: ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD); see
HBM MIL-Std 883; class 3 > 4 kV
120
I
(%)
pp
100 % Ipp; 8 µs
Low capacitance bi-directional double ESD protection diode
discharge capability
001aaa630
PESD5V0S2BT
[1] [2]
IEC 61000-4-2 (contact
discharge)
HBM MIL-Std 883 10 kV
Figure 2 > 15 kV (air); > 8 kV (contact)
I
pp
100 %
90 %
30 kV
001aaa631
80
40
0
0403010 20
−t
e
50 % Ipp; 20 µs
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5.
10 %
tr = 0.7 to 1 ns
30 ns
60 ns
t
Fig 2. ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2.
9397 750 13344 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 27 May 2004 3 of 11
Philips Semiconductors
6. Characteristics
Table 8: Electrical characteristics
T
= 25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
RWM
I
RM
V
(CL)R
V
BR
r
diff
C
d
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform, see Figure 3.
[2] Measured from pin 1 to 3 or pin 2 to 3.
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
reverse stand-off
voltage
reverse leakage
V
= 5 V - 5 100 nA
RWM
current
clamping voltage Ipp = 1 A
= 12 A
I
pp
breakdown voltage IR = 1 mA 5.5 - 9.5 V
differential
IR = 1 mA - - 50 Ω
resistance
diode capacitance f = 1 MHz; VR = 0 V - 35 45 pF
-- 5V
[1] [2]
- - 10 V
[1] [2]
- - 14 V
10
001aaa632
3
tp (µs)
4
3
10
P
pp
(W)
2
10
10
110
T
amb
tp = 8/20 µs exponential decay waveform; see
Figure 1.
10 10
= 25 °C.
2
Fig 3. Peak pulse power dissipation as a function of
pulse time; typical values.
001aaa633
Tj (°C)
P
P
pp(25 °C)
1.2
pp
0.8
0.4
0
0 20015050 100
T
= 25 °C.
amb
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values.
9397 750 13344 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 27 May 2004 4 of 11
Philips Semiconductors
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
001aaa634
VR (V)
C
(pF)
d
38
34
30
26
22
054231
T
= 25 °C; f = 1 MHz. IR < 1 nA measured at T
amb
Fig 5. Diode capacitance as a function of reverse
voltage; typical values.
2
10
I
R
I
R(85 °C)
10
1
−1
10
75 150125100
amb
= 25 °C.
001aaa635
Tj (°C)
Fig 6. Relative variation of reverse leakage current as
a function of junction temperature; typical
values.
9397 750 13344 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 27 May 2004 5 of 11
Philips Semiconductors
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
ESD TESTER
R
Z
C
Z
IEC 61000-4-2 network
= 150 pF; RZ = 330 Ω
C
Z
GND
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
vertical scale = 200 V/div
horizontal scale = 50 ns/div
RG 223/U
50 Ω coax
450 Ω
D.U.T.: PESD5V0S2BT
GND
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50 Ω
vertical scale = 10 V/div
horizontal scale = 50 ns/div
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
vertical scale = 10 V/div
horizontal scale = 50 ns/div
coa006
Fig 7. ESD clamping test set-up and waveforms.
9397 750 13344 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 27 May 2004 6 of 11
Philips Semiconductors
7. Application information
The PESD5V0S2BT is designed for the bi-directional protection of 2 lines from the
damage caused by Electro Static Discharge (ESD) and surge pulses. The
PESD5V0S2BT may be used on lines where the signal polarities are above and below
ground. The PESD5V0S2BT provides a surge capability of 130 Wattspeak Pppper line for
an 8/20 µs waveform.
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
line 1 to be protected
line 2 to be protected
PESD5V0S2BT
GND
001aaa636
Fig 8. Typical application for bi-directional protection of two lines.
Circuit board layout and protection device placement:
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESD5V0S2BT as close to the input terminal or connector as possible.
2. The path length between the PESD5V0S2BT and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all printed-circuit board conductive loops including power and group loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
9397 750 13344 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 27 May 2004 7 of 11
Philips Semiconductors
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
8. Package outline
Plastic surface mounted package; 3 leads SOT23
D
3
A
A
1
12
e
1
b
p
e
w M
B
E
H
E
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
mm
OUTLINE
VERSION
SOT23 TO-236AB
A
1.1
0.9
max.
0.1
1
cD
b
p
0.48
0.15
0.38
0.09
IEC JEDEC EIAJ
3.0
2.8
E
1.4
1.2
REFERENCES
1.9
e
H
L
0.45
0.15
Qwv
p
0.55
0.2
0.45
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
e
1
E
2.5
0.95
2.1
Fig 9. Package outline.
9397 750 13344 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 27 May 2004 8 of 11
Philips Semiconductors
Low capacitance bi-directional double ESD protection diode
PESD5V0S2BT
9. Revision history
Table 9: Revision history
Document ID Release date Data sheet status Change notice Order number Supersedes
PESD5V0S2BT_2 20040527 Product data - 9397 750 13344 PESD5V0S2BT_1
PESD5V0S2BT_1 20040517 Product data - 9397 750 12901 -
9397 750 13344 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 27 May 2004 9 of 11
Philips Semiconductors
10. Data sheet status
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
Level Data sheet status
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
II Preliminary data Qualification This datasheet contains data fromthe preliminary specification. Supplementarydatawill be published
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
[1]
Product status
11. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warrantythat such applications will be suitable for
the specified use without further testing or modification.
[2] [3]
Definition
Semiconductors reserves the right to change the specification in any manner without notice.
at a laterdate. Philips Semiconductors reserves theright to changethe specification without notice, in
order to improve the design and supply the best possible product.
right to make changesat any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
12. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, andmakes norepresentations or warrantiesthat theseproductsare
free frompatent, copyright, ormaskwork right infringement, unlessotherwise
specified.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 13344 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 27 May 2004 10 of 11
Philips Semiconductors
Low capacitance bi-directional double ESD protection diode
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 7
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 10
11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information . . . . . . . . . . . . . . . . . . . . 10
PESD5V0S2BT
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form partof any quotation or contract, is believed to beaccurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Document order number: 9397 750 13344
Published in The Netherlands
Date of release: 27 May 2004
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