Philips PESD5V0S2BT Technical data

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PESD5V0S2BT

Low capacitance bi-directional double ESD protection diode
in SOT23 package

Rev. 02 — 27 May 2004 Product data sheet

1. Product profile

1.1 General description

Low capacitance bi-directional double ESD protection diode in the small SOT23 plastic
package designed to protect 2 data lines from the damage caused by Electro Static
Discharge (ESD) and other transients.

1.2 Features

■ Bi-directional ESD protection of 2 lines

■ Low diode capacitance

■ Max. peak pulse power: Ppp = 130 W at tp = 8/20 µs

■ Low clamping voltage: V

■ Ultra low leakage current: IRM = 5 nA at V

■ ESD protection > 30 kV

■ IEC 61000-4-2; level 4 (ESD)

■ IEC-61000-4-5 (surge); Ipp = 12 A at tp = 8/20 µs.

= 14 V at Ipp = 12 A

CL(R)

RWM

= 5 V

1.3 Applications

■ Cellular handsets and accessories

■ Portable electronics

■ Computers and peripherals

■ Communication systems

■ Audio and video equipment.

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V
C

RWM
d

reverse stand-off voltage - 5 - V
diode capacitance f = 1 MHz;

V

=0V

R

number of protected lines - 2 -

-35-pF

Philips Semiconductors

2. Pinning information

Table 2: Discrete Pinning

Pin Description Simplified outline Symbol

1 cathode 1
2 cathode 2
3 double cathode

3. Ordering information

Table 3: Ordering information

Type number Package

PESD5V0S2BT - plastic surface mounted package; 3 leads SOT23

PESD5V0S2BT

Low capacitance bi-directional double ESD protection diode

3

1 2

SOT23

Name Description Version

1

3

2

sym031

4. Marking

Table 4: Marking

Type number Marking code

PESD5V0S2BT *G5

[1] * = p: made in Hong Kong.

* = t: made in Malaysia.
* = W: made in China.

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

P

pp

I

pp

T

j

T

amb

T

stg

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.
[2] Measured between pins 1 to 3 or pin 2 to 3.

[1]

peak pulse power 8/20 µs pulse
peak pulse current 8/20 µs pulse

[1] [2]

- 130 W

[1] [2]

-12A
junction temperature - 150 °C
operating ambient

−65 +150 °C
temperature

storage temperature −65 +150 °C

9397 750 13344 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 27 May 2004 2 of 11

Philips Semiconductors

Table 6: ESD maximum ratings

Symbol Parameter Conditions Value Unit

ESD electro static

[1] Device stressed with ten non-repetitive Electro Static Discharge (ESD) pulses; see Figure 2.
[2] Measured between pins 1 to 3 or pin 2 to 3.

Table 7: ESD standards compliance

Standard Conditions

IEC 61000-4-2; level 4 (ESD); see
HBM MIL-Std 883; class 3 > 4 kV

120

I

(%)

pp

100 % Ipp; 8 µs

Low capacitance bi-directional double ESD protection diode

discharge capability

001aaa630

PESD5V0S2BT

[1] [2]

IEC 61000-4-2 (contact
discharge)

HBM MIL-Std 883 10 kV

Figure 2 > 15 kV (air); > 8 kV (contact)

I

pp

100 %

90 %

30 kV

001aaa631

80

40

0

0403010 20

−t

e

50 % Ipp; 20 µs

t (µs)

Fig 1. 8/20 µs pulse waveform according to

IEC 61000-4-5.

10 %

tr = 0.7 to 1 ns

30 ns

60 ns

t

Fig 2. ElectroStatic Discharge (ESD) pulse waveform

according to IEC 61000-4-2.

9397 750 13344 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 27 May 2004 3 of 11

Philips Semiconductors

6. Characteristics

Table 8: Electrical characteristics

T

= 25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

Per diode

V

RWM

I

RM

V

(CL)R

V

BR

r

diff

C

d

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform, see Figure 3.
[2] Measured from pin 1 to 3 or pin 2 to 3.

PESD5V0S2BT

Low capacitance bi-directional double ESD protection diode

reverse stand-off
voltage

reverse leakage

V

= 5 V - 5 100 nA

RWM

current
clamping voltage Ipp = 1 A

= 12 A

I

pp

breakdown voltage IR = 1 mA 5.5 - 9.5 V
differential

IR = 1 mA - - 50 Ω

resistance
diode capacitance f = 1 MHz; VR = 0 V - 35 45 pF

-- 5V

[1] [2]

- - 10 V

[1] [2]

- - 14 V

10

001aaa632

3

tp (µs)

4

3

10

P

pp

(W)

2

10

10

110

T

amb

tp = 8/20 µs exponential decay waveform; see

Figure 1.

10 10

= 25 °C.

2

Fig 3. Peak pulse power dissipation as a function of

pulse time; typical values.

001aaa633

Tj (°C)

P

P

pp(25 °C)

1.2

pp

0.8

0.4

0

0 20015050 100

T

= 25 °C.

amb

Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical
values.

9397 750 13344 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 27 May 2004 4 of 11