Philips PESD5V0S1BA, PESD5V0S1BB, PESD5V0S1BL Technical data

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Low capacitance bidirectional ESD protection diodes
Rev. 03 — 17 December 2004 Product data sheet
1. Product profile
1.1 General description
Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD plastic packages designed to protect one signal line from the damage caused byESDand other transients.
Table 1: Product overview
Type number Package
PESD5V0S1BA SOD323 SC-76 PESD5V0S1BB SOD523 SC-79 PESD5V0S1BL SOD882 -
Philips JEITA
1.2 Features
Bidirectional ESD protection of one line ESD protection > 30 kV
Max. peak pulse power: PPP = 130 W ■ IEC 61000-4-2, level 4 (ESD)
Low clamping voltage: V
Ultra low leakage current: IRM = 5 nA ■ Ultra small SMD plastic packages
= 14 V IEC 61000-4-5 (surge); IPP = 12 A
(CL)R
1.3 Applications
Cellular handsets and accessories Communication systems
Portable electronics Audio and video equipment
Computers and peripherals
1.4 Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V C
RWM d
reverse stand-off voltage - - 5 V diode capacitance VR = 0 V;
f = 1 MHz
- 3545pF
Philips Semiconductors
2. Pinning information
Table 3: Pinning
Pin Description Simplified outline Symbol
SOD323, SOD523
1 cathode 1 2 cathode 2
SOD882
1 cathode 1 2 cathode 2
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
12
001aab540
21
Transparent
top view
21
sym045
21
sym045
3. Ordering information
Table 4: Ordering information
Type number Package
PESD5V0S1BA SC-76 plastic surface mounted package; 2 leads SOD323 PESD5V0S1BB SC-79 plastic surface mounted package; 2 leads SOD523 PESD5V0S1BL - leadless ultra small plastic package; 2 terminals;
4. Marking
Table 5: Marking codes
Type number Marking code
PESD5V0S1BA E6 PESD5V0S1BB L7 PESD5V0S1BL F1
Name Description Version
SOD882
body 1.0 × 0.6 × 0.5 mm
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 2 of 15
Philips Semiconductors
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
P
PP
I
PP
T
j
T
amb
T
stg
[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see
Figure 1.
[2] Measured from pin 1 to pin 2.
Table 7: ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
ESD electrostatic discharge
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
peak pulse power 8/20 µs peak pulse current 8/20 µs junction temperature - 150 °C ambient temperature 65 +150 °C storage temperature 65 +150 °C
IEC 61000-4-2 (contact
capability
discharge) HBM MIL-Std 883 - 10 kV
[1] [2]
- 130 W
[1] [2]
-12A
[1] [2]
-30kV
[1] Measured from pin 1 to pin 2. [2] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure2.
Table 8: ESD standards compliance
ESD Standard Conditions
IEC 61000-4-2, level 4 (ESD);
Figure 2 > 15 kV (air); > 8 kV (contact)
HBM MIL-STD 883; class 3 > 4 kV
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 3 of 15
Philips Semiconductors
120
I
(%)
pp
100 % Ipp; 8 µs
mle218
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
001aaa191
I
pp
100 %
90 %
80
40
0
010
t
e
50 % Ipp; 20 µs
20
30
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
10 %
tr = 0.7 to 1 ns
40
30 ns
60 ns
t
Fig 2. ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 4 of 15
Philips Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
6. Characteristics
Table 9: Characteristics
T
= 25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
RWM
I
RM
V
(CL)R
V
(BR)
r
dif
C
d
[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1. [2] Measures from pin 1 to pin 2.
reverse stand-off voltage - - 5 V reverse leakage current V
RWM
see
= 5 V;
Figure 6
clamping voltage IPP = 1 A
= 12 A
I
PP
- 5 100 nA
[1] [2]
--10V
[1] [2]
--14V breakdown voltage IR = 1 mA 5.5 - 9.5 V differential resistance IR = 1 mA - - 50 diode capacitance VR = 0 V; f = 1 MHz;
see
Figure 5
- 3545pF
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 5 of 15
Philips Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
10
001aaa202
3
tp (µs)
4
3
10
P
pp
(W)
2
10
10
110
T
amb
10 10
= 25 °C
2
Fig 3. Peak pulse power dissipation as a function of
exponential time duration t
38
C
d
(pF)
34
; typical values
p
001aaa203
1.2
P
pp
P
pp(25˚C)
0.8
0.4
0
0 20015050 100
001aaa193
Tj (°C)
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical values
10
I
RM(Tj)
I
RM(Tj=85°C)
10
2
001aaa204
30
26
22
054231
T
= 25 °C; f = 1 MHz
amb
VR (V)
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
1
1
10
75 150125100
Tj (°C)
Fig 6. Relative variation of reverse leakage current as
a function of junction temperature; typical values
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 6 of 15
Philips Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
ESD TESTER 4 GHz DIGITAL
R
Z
C
Z
IEC 61000-4-2 network
= 150 pF; RZ = 330
C
Z
GND
unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network)
450
PESD5V0S1Bx
vertical scale = 200 V/div horizontal scale = 50 ns/div
RG 223/U 50 coax
GND
clamped +1 kV ESD voltage waveform (IEC61000-4-2 network)
10×
ATTENUATOR
OSCILLOSCOPE
50
vertical scale = 10 V/div horizontal scale = 50 ns/div
GND
GND
vertical scale = 200 V/div horizontal scale = 50 ns/div
unclamped 1 kV ESD voltage waveform (IEC61000-4-2 network)
clamped 1 kV ESD voltage waveform (IEC61000-4-2 network)
vertical scale = 10 V/div horizontal scale = 50 ns/div
006aaa056
Fig 7. ESD clamping test set-up and waveforms
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 7 of 15
Philips Semiconductors
7. Application information
PESD5V0S1Bx series is designed for the protection of one bidirectional signal line from the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The devices may be used on lines where the signal polarities are above and below ground. They provide a surge capability of up to 130 W per line for a 8/20 µs waveform.
Fig 8. Bidirectional protection of one signal line.
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
signal line
PESD5V0S1Bx
GND
006aaa057
Circuit board layout and protection device placement:
Circuit board layout is critical for the suppression of ESD, EFT and surge transients. The following guidelines are recommended:
1. Place the protection device as close to the input terminal or connector as possible.
2. The path length between the protection device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protection conductors in parallel with unprotected conductor.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit boards, use ground vias.
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 8 of 15
Philips Semiconductors
8. Package outline
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
Plastic surface mounted package; 2 leads
D
H
D
SOD323
A
X
M
vA
E
Q
21
(1)
01
DIMENSIONS (mm are the original dimensions)
A
1.1
0.8
1
b
A
max
c D E H
p
0.40
0.25
1.8
0.25
0.10
IEC JEDEC JEITA
1.6
1.35
1.15
D
2.7
2.3
REFERENCES
UNIT
mm 0.05
Note
1. The marking bar indicates the cathode
OUTLINE VERSION
SOD323 SC-76
L
0.45
0.15
b
p
scale
Q
0.25
0.15
v
0.2
p
A
A
2 mm
1
L
detail X
EUROPEAN
PROJECTION
p
c
ISSUE DATE
99-09-13 03-12-17
Fig 9. Package outline SOD323 (SC-76)
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 9 of 15
Philips Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
Plastic surface mounted package; 2 leads SOD523
A
c
v M
H
E
A
D
12
b
E
p
(1)
OUTLINE VERSION
SOD523 SC-79
IEC JEDEC JEITA
Fig 10. Package outline SOD523 (SC-79)
A
REFERENCES
0 0.5 1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT b
Note
1. The marking bar indicates the cathode.
AH
0.34
0.65
mm
0.58
0.26
p
0.17
0.11
cD
1.25
1.15
EUROPEAN
PROJECTION
E
0.85
0.75
E
1.65
1.55
ISSUE DATE
98-11-25 02-12-13
v
0.1
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 10 of 15
Philips Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm SOD882
L
1
e
1
E
L
2
b
A
A
1
D
(2)
0 0.5 1 mm
DIMENSIONS (mm are the original dimensions)
A
(1)
UNIT
A
0.50
mm
0.46
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
OUTLINE VERSION
SOD882
1
be
max.
0.03
DE
0.55
0.62
1.02
0.47
0.55
IEC JEDEC JEITA
0.95
0.65
L
1
0.30
0.22
REFERENCES
scale
EUROPEAN
PROJECTION
ISSUE DATE
03-04-16 03-04-17
Fig 11. Package outline SOD882
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 11 of 15
Philips Semiconductors
9. Packing information
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
Table 10: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
PESD5V0S1BA SOD323 4 mm pitch, 8 mm tape and reel -115 -135 PESD5V0S1BB SOD523 4 mm pitch, 8 mm tape and reel -115 -135 PESD5V0S1BL SOD882 4 mm pitch, 8 mm tape and reel - -315
[1] For further information and the availability of packing methods, seeSection 14.
[1]
3000 10000
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 12 of 15
Philips Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
10. Revision history
Table 11: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
PESD5V0S1BA_BB_BL_3 20041217 Product data sheet - 9397 750 14036 PESD5V0S1BA_BB_
BL_2
Modifications:
PESD5V0S1BA_BB_BL_2 20040802 Product data sheet - 9397 750 13514 PESD5V0S1BA_1
PESD5V0S1BA_1 20040322 Product
PESD5V0S1BB_1 20040304 Product
Table 1 Product overview added
Figure 1 Figure title amended
Table 9 Symbol for differential resistance amended to r
Figure 5 Axis description changed from V
- 9397 750 12256 -
specification
- 9397 750 12257 -
specification
to VR and figure title amended
BR
dif
PESD5V0S1BB_1
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 13 of 15
Philips Semiconductors
11. Data sheet status
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
Level Data sheet status
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
[1]
Product status
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
[2] [3]
Definition
Semiconductors reserves the right to change the specification in any manner without notice.
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product.
right to make changes at any time in order to improve the design, manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
13. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makesno representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 14 of 15
Philips Semiconductors
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Application information. . . . . . . . . . . . . . . . . . . 8
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Packing information. . . . . . . . . . . . . . . . . . . . . 12
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
14 Contact information . . . . . . . . . . . . . . . . . . . . 14
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Published in The Netherlands
Date of release: 17 December 2004
Document number: 9397 750 14036
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