Philips PESD5V0S1BA, PESD5V0S1BB, PESD5V0S1BL Technical data
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PESD5V0S1BA;PESD5V0S1BB;
PESD5V0S1BL
Low capacitance bidirectional ESD protection diodes
Rev. 03 — 17 December 2004 Product data sheet
1. Product profile
1.1 General description
Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD
plastic packages designed to protect one signal line from the damage caused byESDand
other transients.
Table 1: Product overview
Type number Package
PESD5V0S1BA SOD323 SC-76
PESD5V0S1BB SOD523 SC-79
PESD5V0S1BL SOD882 -
Philips JEITA
1.2 Features
■ Bidirectional ESD protection of one line ■ ESD protection > 30 kV
■ Max. peak pulse power: PPP = 130 W ■ IEC 61000-4-2, level 4 (ESD)
■ Low clamping voltage: V
■ Ultra low leakage current: IRM = 5 nA ■ Ultra small SMD plastic packages
= 14 V ■ IEC 61000-4-5 (surge); IPP = 12 A
(CL)R
1.3 Applications
■ Cellular handsets and accessories ■ Communication systems
■ Portable electronics ■ Audio and video equipment
■ Computers and peripherals
1.4 Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
C
RWM
d
reverse stand-off voltage - - 5 V
diode capacitance VR = 0 V;
f = 1 MHz
- 3545pF
Philips Semiconductors
2. Pinning information
Table 3: Pinning
Pin Description Simplified outline Symbol
SOD323, SOD523
1 cathode 1
2 cathode 2
SOD882
1 cathode 1
2 cathode 2
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
12
001aab540
21
Transparent
top view
21
sym045
21
sym045
3. Ordering information
Table 4: Ordering information
Type number Package
PESD5V0S1BA SC-76 plastic surface mounted package; 2 leads SOD323
PESD5V0S1BB SC-79 plastic surface mounted package; 2 leads SOD523
PESD5V0S1BL - leadless ultra small plastic package; 2 terminals;
4. Marking
Table 5: Marking codes
Type number Marking code
PESD5V0S1BA E6
PESD5V0S1BB L7
PESD5V0S1BL F1
Name Description Version
SOD882
body 1.0 × 0.6 × 0.5 mm
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 2 of 15
Philips Semiconductors
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
P
PP
I
PP
T
j
T
amb
T
stg
[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see
Figure 1.
[2] Measured from pin 1 to pin 2.
Table 7: ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
ESD electrostatic discharge
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
peak pulse power 8/20 µs
peak pulse current 8/20 µs
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
IEC 61000-4-2 (contact
capability
discharge)
HBM MIL-Std 883 - 10 kV
[1] [2]
- 130 W
[1] [2]
-12A
[1] [2]
-30kV
[1] Measured from pin 1 to pin 2.
[2] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure2.
Table 8: ESD standards compliance
ESD Standard Conditions
IEC 61000-4-2, level 4 (ESD);
Figure 2 > 15 kV (air); > 8 kV (contact)
HBM MIL-STD 883; class 3 > 4 kV
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 3 of 15
Philips Semiconductors
120
I
(%)
pp
100 % Ipp; 8 µs
mle218
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
001aaa191
I
pp
100 %
90 %
80
40
0
010
−t
e
50 % Ipp; 20 µs
20
30
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
10 %
tr = 0.7 to 1 ns
40
30 ns
60 ns
t
Fig 2. ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 4 of 15
Philips Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
6. Characteristics
Table 9: Characteristics
T
= 25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
RWM
I
RM
V
(CL)R
V
(BR)
r
dif
C
d
[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1.
[2] Measures from pin 1 to pin 2.
reverse stand-off voltage - - 5 V
reverse leakage current V
RWM
see
= 5 V;
Figure 6
clamping voltage IPP = 1 A
= 12 A
I
PP
- 5 100 nA
[1] [2]
--10V
[1] [2]
--14V
breakdown voltage IR = 1 mA 5.5 - 9.5 V
differential resistance IR = 1 mA - - 50 Ω
diode capacitance VR = 0 V; f = 1 MHz;
see
Figure 5
- 3545pF
9397 750 14036 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 17 December 2004 5 of 15
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