PESD5V0S1BA
PESD5V0S1BA; PESD5V0S1BB; PESD5V0S1BL
Low capacitance bidirectional ESD protection diodes
Rev. 03 — 17 December 2004 |
Product data sheet |
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1.Product profile
1.1General description
Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD plastic packages designed to protect one signal line from the damage caused by ESD and other transients.
Table 1: Product overview
Type number |
Package |
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Philips |
JEITA |
PESD5V0S1BA |
SOD323 |
SC-76 |
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PESD5V0S1BB |
SOD523 |
SC-79 |
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PESD5V0S1BL |
SOD882 |
- |
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1.2 Features
■ Bidirectional ESD protection of one line |
■ ESD protection > 30 kV |
■ Max. peak pulse power: PPP = 130 W |
■ IEC 61000-4-2, level 4 (ESD) |
■ Low clamping voltage: V(CL)R = 14 V |
■ IEC 61000-4-5 (surge); IPP = 12 A |
■ Ultra low leakage current: IRM = 5 nA |
■ Ultra small SMD plastic packages |
1.3 Applications
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Cellular handsets and accessories |
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Communication systems |
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Portable electronics |
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Audio and video equipment |
■ Computers and peripherals
1.4Quick reference data
Table 2: |
Quick reference data |
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Symbol |
Parameter |
Conditions |
Min |
Typ |
Max |
Unit |
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VRWM |
reverse stand-off voltage |
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- |
- |
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5 |
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V |
Cd |
diode capacitance |
VR = 0 V; |
- |
35 |
45 |
pF |
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f = 1 MHz |
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Philips Semiconductors |
PESD5V0S1BA/BB/BL |
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Low capacitance bidirectional ESD protection diodes |
2. Pinning information
Table 3: Pinning
Pin |
Description |
Simplified outline |
Symbol |
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SOD323, SOD523
1cathode 1
2cathode 2
1 |
1 |
2 |
2 |
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sym045 |
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001aab540 |
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SOD882
1cathode 1
2cathode 2
1 2
Transparent
top view
1 |
2 |
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sym045 |
3. Ordering information
Table 4: Ordering information
Type number |
Package |
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Name |
Description |
Version |
PESD5V0S1BA |
SC-76 |
plastic surface mounted package; 2 leads |
SOD323 |
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PESD5V0S1BB |
SC-79 |
plastic surface mounted package; 2 leads |
SOD523 |
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PESD5V0S1BL |
- |
leadless ultra small plastic package; 2 terminals; |
SOD882 |
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body 1.0 × 0.6 × 0.5 mm |
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4. Marking
Table 5: Marking codes
Type number |
Marking code |
PESD5V0S1BA |
E6 |
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PESD5V0S1BB |
L7 |
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PESD5V0S1BL |
F1 |
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9397 750 14036 |
© Koninklijke Philips Electronics N.V. 2004. All rights reserved. |
Product data sheet |
Rev. 03 — 17 December 2004 |
2 of 15 |
Philips Semiconductors |
PESD5V0S1BA/BB/BL |
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Low capacitance bidirectional ESD protection diodes |
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol |
Parameter |
Conditions |
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Min |
Max |
Unit |
Per diode |
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PPP |
peak pulse power |
8/20 μs |
[1] [2] |
- |
130 |
W |
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IPP |
peak pulse current |
8/20 μs |
[1] [2] |
- |
12 |
A |
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Tj |
junction temperature |
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- |
150 |
°C |
Tamb |
ambient temperature |
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−65 |
+150 |
°C |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
[1]Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC61000-4-5; see Figure 1.
[2]Measured from pin 1 to pin 2.
Table 7: |
ESD maximum ratings |
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Symbol |
Parameter |
Conditions |
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Min |
Max |
Unit |
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ESD |
electrostatic discharge |
IEC 61000-4-2 (contact |
[1] |
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[2] |
- |
30 |
kV |
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capability |
discharge) |
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HBM MIL-Std 883 |
- |
10 |
kV |
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[1]Measured from pin 1 to pin 2.
[2]Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
Table 8: ESD standards compliance
ESD Standard |
Conditions |
IEC 61000-4-2, level 4 (ESD); Figure 2 |
> 15 kV (air); > 8 kV (contact) |
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HBM MIL-STD 883; class 3 |
> 4 kV |
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9397 750 14036 |
© Koninklijke Philips Electronics N.V. 2004. All rights reserved. |
Product data sheet |
Rev. 03 — 17 December 2004 |
3 of 15 |
Philips Semiconductors |
PESD5V0S1BA/BB/BL |
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Low capacitance bidirectional ESD protection diodes |
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001aaa191 |
120 |
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mle218 |
Ipp |
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100 % |
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Ipp |
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100 % Ipp; 8 μs |
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90 % |
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(%) |
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80 |
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e−t |
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50 % Ipp; 20 μs |
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40 |
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10 % |
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0 |
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tr = 0.7 to 1 ns |
t |
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30 |
40 |
30 ns |
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0 |
10 |
20 |
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t (μs) |
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60 ns |
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Fig 1. 8/20 μs pulse waveform according to |
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Fig 2. ElectroStatic Discharge (ESD) pulse waveform |
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IEC 61000-4-5 |
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according to IEC 61000-4-2 |
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9397 750 14036 |
© Koninklijke Philips Electronics N.V. 2004. All rights reserved. |
Product data sheet |
Rev. 03 — 17 December 2004 |
4 of 15 |
Philips Semiconductors |
PESD5V0S1BA/BB/BL |
||
|
|
|
Low capacitance bidirectional ESD protection diodes |
6. Characteristics
Table 9: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol |
Parameter |
Conditions |
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Min |
Typ |
Max |
Unit |
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Per diode |
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VRWM |
reverse stand-off voltage |
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- |
- |
5 |
V |
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IRM |
reverse leakage current |
VRWM = 5 V; |
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5 |
100 |
nA |
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see Figure 6 |
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V |
(CL)R |
clamping voltage |
I = 1 A |
[1] [2] |
- |
- |
10 |
V |
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PP |
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IPP = 12 A |
[1] [2] |
- |
- |
14 |
V |
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V(BR) |
breakdown voltage |
IR = 1 mA |
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5.5 |
- |
9.5 |
V |
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rdif |
differential resistance |
IR = 1 mA |
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- |
- |
50 |
Ω |
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Cd |
diode capacitance |
VR = 0 V; f = 1 MHz; |
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- |
35 |
45 |
pF |
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see Figure 5 |
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[1]Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC61000-4-5; see Figure 1.
[2]Measures from pin 1 to pin 2.
9397 750 14036 |
© Koninklijke Philips Electronics N.V. 2004. All rights reserved. |
Product data sheet |
Rev. 03 — 17 December 2004 |
5 of 15 |
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