Philips PESD5V0L7BAS, PESD5V0L7BS Technical data

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PESD5V0L7BAS;
PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode
arrays

Rev. 02 — 25 November 2004 Product data sheet

1. Product profile

1.1 General description

Low capacitance 7-fold bidirectional ESD protection diode arrays in small plastic
packages designed for the protection of up to seven transmission or data lines from
damage caused by ElectroStatic Discharge (ESD) and other transients.

Table 1: Product overview

Type number Package

PESD5V0L7BAS TSSOP8 SOT505-1
PESD5V0L7BS SO8 SOT96-1

Name Philips

1.2 Features

■ ESD protection of up to seven lines ■ Ultra low leakage current: IRM = 3 nA

■ Low diode capacitance ■ ESD protection of up to 10 kV

■ Max. peak pulse power: Ppp = 35 W ■ IEC 61000-4-2, level 4 (ESD)

■ Low clamping voltage: V

= 17 V ■ IEC 61000-4-5 (surge); Ipp = 2.5 A.

(CL)R

1.3 Applications

■ Computers and peripherals ■ High speed data lines

■ Communication systems ■ Parallel ports.

■ Audio and video equipment

1.4 Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V
C

RWM
d

reverse stand-off voltage - - 5 V
diode capacitance VR = 0 V;

f = 1 MHz

- 8 10 pF

Philips Semiconductors

2. Pinning information

Table 3: Pinning

Pin Description Simplified outline Symbol

TSSOP8
1 cathode 1
2 cathode 2
3 cathode 3
4 cathode 4
5 cathode 5
6 cathode 6
7 cathode 7
8 cathode 8

SO8
1 cathode 1
2 cathode 2
3 cathode 3
4 cathode 4
5 cathode 5
6 cathode 6
7 cathode 7
8 cathode 8

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

85

14

8

1

1

2

3

4

5

1

2

3

4

4

8

7

6

5

sym005

8

7

6

5

sym005

3. Ordering information

Table 4: Ordering information

Type number Package

Name Description Version

PESD5V0L7BAS TSSOP8 plastic thin shrink small outline package; 8 leads;

SOT505-1

body width 3 mm

PESD5V0L7BS SO8 plastic small outline package; 8 leads;

SOT96-1

body width 3.9 mm

4. Marking

Table 5: Marking codes

Type number Marking code

PESD5V0L7BAS 5V0L7B
PESD5V0L7BS 5V0L7BS

9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 25 November 2004 2 of 14

Philips Semiconductors

5. Limiting values

Table 6: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

P

pp

I

pp

T

j

T

amb

T

stg

[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see

Figure 1.

Table 7: ESD maximum ratings

Symbol Parameter Conditions Min Max Unit

ESD electrostatic discharge

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

peak pulse power 8/20 µs pulse
peak pulse current 8/20µs pulse
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

IEC 61000-4-2

capability

(contact discharge)
HBM MIL-STD883 - 10 kV

[1]

-35W

[1]

- 2.5 A

[1]

-10kV

[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.

Table 8: ESD standards compliance

ESD Standard Conditions

IEC 61000-4-2, level 4 (ESD); see

Figure 2 > 8 kV (contact)

HBM MIL-STD883, class 3 > 4 kV

9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 25 November 2004 3 of 14

Philips Semiconductors

120

I

(%)

pp

100 % Ipp; 8 µs

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

001aaa191

I

001aaa630

pp

100 %

90 %

80

40

0

0403010 20

−t

e

; 20 µs

50 % I

pp

t (µs)

Fig 1. 8/20 µs pulse waveform according to

IEC 61000-4-5.

10 %

tr = 0.7 to 1 ns

30 ns

60 ns

t

Fig 2. ElectroStatic Discharge (ESD) pulse waveform

according to IEC 61000-4-2.

9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 25 November 2004 4 of 14

Philips Semiconductors

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

6. Characteristics

Table 9: Characteristics

T

= 25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

Per diode

V

RWM

I

RM

V

(CL)R

V

(BR)

r

dif

C

d

[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1.

reverse stand-off voltage - - 5 V
reverse leakage current V
clamping voltage Ipp = 1 A

= 5 V; see Figure 6 - 3 25 nA

RWM

[1]

- - 11 V

= 2.5 A

I

pp

[1]

- - 17 V
breakdown voltage IR = 1 mA 7.2 7.6 7.9 V
differential resistance IR = 1 mA - - 100 Ω
diode capacitance VR = 0 V; f = 1 MHz;

see

Figure 5

- 8 10 pF

9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 25 November 2004 5 of 14