Datasheet PESD5V0L7BAS, PESD5V0L7BS Datasheet (Philips)

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PESD5V0L7BAS;
PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode
arrays

Rev. 02 — 25 November 2004 Product data sheet

1. Product profile

1.1 General description

Low capacitance 7-fold bidirectional ESD protection diode arrays in small plastic
packages designed for the protection of up to seven transmission or data lines from
damage caused by ElectroStatic Discharge (ESD) and other transients.

Table 1: Product overview

Type number Package

PESD5V0L7BAS TSSOP8 SOT505-1
PESD5V0L7BS SO8 SOT96-1

Name Philips

1.2 Features

■ ESD protection of up to seven lines ■ Ultra low leakage current: IRM = 3 nA

■ Low diode capacitance ■ ESD protection of up to 10 kV

■ Max. peak pulse power: Ppp = 35 W ■ IEC 61000-4-2, level 4 (ESD)

■ Low clamping voltage: V

= 17 V ■ IEC 61000-4-5 (surge); Ipp = 2.5 A.

(CL)R

1.3 Applications

■ Computers and peripherals ■ High speed data lines

■ Communication systems ■ Parallel ports.

■ Audio and video equipment

1.4 Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V
C

RWM
d

reverse stand-off voltage - - 5 V
diode capacitance VR = 0 V;

f = 1 MHz

- 8 10 pF

Philips Semiconductors

2. Pinning information

Table 3: Pinning

Pin Description Simplified outline Symbol

TSSOP8
1 cathode 1
2 cathode 2
3 cathode 3
4 cathode 4
5 cathode 5
6 cathode 6
7 cathode 7
8 cathode 8

SO8
1 cathode 1
2 cathode 2
3 cathode 3
4 cathode 4
5 cathode 5
6 cathode 6
7 cathode 7
8 cathode 8

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

85

14

8

1

1

2

3

4

5

1

2

3

4

4

8

7

6

5

sym005

8

7

6

5

sym005

3. Ordering information

Table 4: Ordering information

Type number Package

Name Description Version

PESD5V0L7BAS TSSOP8 plastic thin shrink small outline package; 8 leads;

SOT505-1

body width 3 mm

PESD5V0L7BS SO8 plastic small outline package; 8 leads;

SOT96-1

body width 3.9 mm

4. Marking

Table 5: Marking codes

Type number Marking code

PESD5V0L7BAS 5V0L7B
PESD5V0L7BS 5V0L7BS

9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 25 November 2004 2 of 14

Philips Semiconductors

5. Limiting values

Table 6: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

P

pp

I

pp

T

j

T

amb

T

stg

[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see

Figure 1.

Table 7: ESD maximum ratings

Symbol Parameter Conditions Min Max Unit

ESD electrostatic discharge

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

peak pulse power 8/20 µs pulse
peak pulse current 8/20µs pulse
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

IEC 61000-4-2

capability

(contact discharge)
HBM MIL-STD883 - 10 kV

[1]

-35W

[1]

- 2.5 A

[1]

-10kV

[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.

Table 8: ESD standards compliance

ESD Standard Conditions

IEC 61000-4-2, level 4 (ESD); see

Figure 2 > 8 kV (contact)

HBM MIL-STD883, class 3 > 4 kV

9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 25 November 2004 3 of 14

Philips Semiconductors

120

I

(%)

pp

100 % Ipp; 8 µs

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

001aaa191

I

001aaa630

pp

100 %

90 %

80

40

0

0403010 20

−t

e

; 20 µs

50 % I

pp

t (µs)

Fig 1. 8/20 µs pulse waveform according to

IEC 61000-4-5.

10 %

tr = 0.7 to 1 ns

30 ns

60 ns

t

Fig 2. ElectroStatic Discharge (ESD) pulse waveform

according to IEC 61000-4-2.

9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 25 November 2004 4 of 14

Philips Semiconductors

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

6. Characteristics

Table 9: Characteristics

T

= 25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

Per diode

V

RWM

I

RM

V

(CL)R

V

(BR)

r

dif

C

d

[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1.

reverse stand-off voltage - - 5 V
reverse leakage current V
clamping voltage Ipp = 1 A

= 5 V; see Figure 6 - 3 25 nA

RWM

[1]

- - 11 V

= 2.5 A

I

pp

[1]

- - 17 V
breakdown voltage IR = 1 mA 7.2 7.6 7.9 V
differential resistance IR = 1 mA - - 100 Ω
diode capacitance VR = 0 V; f = 1 MHz;

see

Figure 5

- 8 10 pF

9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 25 November 2004 5 of 14

Philips Semiconductors

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

10

001aaa192

3

tp (µs)

4

2

10

P

pp

(W)

10

1

110

T

amb

10 10

= 25 °C.

2

Fig 3. Peak pulse power as a function of exponential

pulse duration t

9

; typical values.

p

001aaa142

1.2

P

pp

P

pp(25˚C)

0.8

0.4

0

0 20015050 100

001aaa193

Tj (°C)

Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical
values.

10

001aaa143

C

d

(pF)

8

7

6

054231

T

= 25 °C; f = 1 MHz.

amb

VR (V)

Fig 5. Diode capacitance as a function of reverse

voltage; typical values.

I

RM

I

RM(25°C)

1

0

−100 150100050−50
T

(°C)

j

Fig 6. Relative variation of reverse leakage current as

a function of junction temperature; typical
values.

9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 25 November 2004 6 of 14

Philips Semiconductors

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

ESD TESTER

R

Z

C

Z

IEC 61000-4-2 network

= 150 pF; RZ = 330 Ω

C

Z

450 Ω

DUT: PESD5V0L7BAS

PESD5V0L7BS

vertical scale = 200 V/div
horizontal scale = 50 ns/div

RG 223/U
50 Ω coax

GND

10×

ATTENUATOR

4 GHz DIGITAL

OSCILLOSCOPE

50 Ω

vertical scale = 10 V/div
horizontal scale = 50 ns/div

GND

unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)

GND

vertical scale = 200 V/div
horizontal scale = 50 ns/div

unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)

Fig 7. ESD clamping test set-up and waveforms.

clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)

GND

vertical scale = 10 V/div
horizontal scale = 50 ns/div

clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)

006aaa062

9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 25 November 2004 7 of 14

Philips Semiconductors

7. Application information

The PESD5V0L7BAS and the PESD5V0L7BS are designed for protection of up to seven
bidirectional data lines from the damage caused by ElectroStatic Discharge (ESD) and
surge pulses. The PESD5V0L7BAS and the PESD5V0L7BS may be used on lines whose
signal polarities are above and below ground.

The PESD5V0L7BAS and the PESD5V0L7BS provide a surge capability of 35 W per line
for a 8/20 µs waveform.

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

high speed
data lines

PESD5V0L7BAS
PESD5V0L7BS

GND

006aaa063

Fig 8. Typical application for ESD protection of seven lines carrying bidirectional data.

Circuit board layout and protection device placement:

Circuit board layout is critical for the suppression of ESD, EFT and surge transients.
The following guidelines are recommended:

1. Place the protection device as close as possible to the input terminal or connector.

2. Minimize the path length between the protection device and the protected line.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all printed-circuit board conductive loops including power and group loops.

6. Minimize the length of transient return paths to ground.

7. Avoid using shared return paths to a common ground point.

8. Ground planes should be used whenever possible.

9. Use vias for multilayer printed-circuit boards.

9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 25 November 2004 8 of 14

Philips Semiconductors

8. Package outline

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm

D

y

Z

8

pin 1 index

5

14

e

w M

b

p

c

A

2

A

1

E

H

E

L

detail X

SOT505-1

A

X

v M

A

(A3)

L

p

A

θ

2.5 5 mm0

scale

DIMENSIONS (mm are the original dimensions)

A

A

UNIT

max.

mm

1.1

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE

VERSION

SOT505-1

1

0.15

0.05

A2A3b

0.95

0.25

0.80

IEC JEDEC JEITA

p

0.45

0.25

ceD

0.28

0.15

REFERENCES

(1)E(2)

3.1

2.9

3.1

2.9

0.65

5.1

4.7

LH

E

L

0.7

0.4

p

wyv

0.1 0.10.10.94

EUROPEAN

PROJECTION

(1)

Z

0.70

0.35

ISSUE DATE

θ

6°
0°

99-04-09
03-02-18

Fig 9. Package outline SOT505-1 (TSSOP8).

9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 25 November 2004 9 of 14

Philips Semiconductors

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

SO8: plastic small outline package; 8 leads; body width 3.9 mm

D

c

y

Z

8

pin 1 index

1

e

5

A

2

A

4

w M

b

p

SOT96-1

E

H

E

1

detail X

A

X

v M

A

Q

(A )

L

p

L

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE

VERSION

SOT96-1

A

max.

1.75

0.069

A1A2A

0.25

1.45

0.10

1.25

0.010

0.057

0.004

0.049

IEC JEDEC JEITA

076E03 MS-012

0.25

0.01

b

3

p

0.49

0.36

0.019

0.0100

0.014

0.0075

UNIT

inches

Notes

1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.

cD

0.25

5.0

0.19

4.8

0.20

0.19

REFERENCES

(1)E(2)

4.0

3.8

0.16

0.15

eHELLpQZywv θ

6.2

1.27

5.8

0.244

0.05

0.228

1.05

1.0

0.4

0.039

0.016

0.7

0.6

0.028

0.024

0.25 0.10.25

0.010.010.041 0.004

EUROPEAN

PROJECTION

(1)

0.7

0.3

0.028

0.012

ISSUE DATE

99-12-27
03-02-18

o

8

o

0

Fig 10. Package outline SOT96-1 (SO8/MS-012).

9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 25 November 2004 10 of 14

Philips Semiconductors

9. Packing information

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

Table 10: Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PESD5V0L7BAS SOT505-1 8 mm pitch, 12 mm tape and reel - -118
PESD5V0L7BS SOT96-1 8 mm pitch, 12 mm tape and reel -115 -118

[1] For further information and the availability of packing methods, seeSection 14.

[1]

1000 2500

9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 25 November 2004 11 of 14

Philips Semiconductors

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

10. Revision history

Table 11: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

PESD5V0L7BAS_BS_2 20041125 Product data sheet - 9397 750 13705 PESD5V0L7BS_1
Modifications:

PESD5V0L7BS_1 20040315 Product specification - 9397 750 12249 -

• The format of this data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors.

• PESD5V0L7BAS added

• Table 1: product overview added

• Section 9 Packing information added

9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 25 November 2004 12 of 14

Philips Semiconductors

11. Data sheet status

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

Level Data sheet status

I Objective data Development This data sheet contains data from the objective specification for product development. Philips

II Preliminary data Qualification This data sheet containsdata from thepreliminary specification.Supplementary datawill be published

III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

12. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warrantythat such applications will be suitable for
the specified use without further testing or modification.

[2] [3]

Definition

Semiconductors reserves the right to change the specification in any manner without notice.

at a laterdate. Philips Semiconductors reserves theright to changethe specification without notice, in
order to improve the design and supply the best possible product.

right to make changesat any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, andmakes norepresentations or warrantiesthat theseproducts are
free frompatent, copyright, ormask work right infringement, unlessotherwise
specified.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [e-mail]

9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 25 November 2004 13 of 14

Philips Semiconductors

PESD5V0L7BAS; PESD5V0L7BS

Low capacitance 7-fold bidirectional ESD protection diode arrays

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Application information. . . . . . . . . . . . . . . . . . . 8

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Packing information. . . . . . . . . . . . . . . . . . . . . 11

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 13

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Contact information . . . . . . . . . . . . . . . . . . . . 13

© Koninklijke Philips Electronics N.V. 2004

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form partof any quotation or contract, is believed to beaccurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 25 November 2004

Document number: 9397 750 13705