PESD5V0L6UAS
PESD5V0L6UAS;
PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
Rev. 02 — 9 November 2004 |
Product data sheet |
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1.Product profile
1.1General description
Low capacitance 6-fold ESD protection diode arrays in small plastic packages designed to protect up to six transmission or data lines from the damage caused by ElectroStatic Discharge (ESD) and other transients.
Table 1: Product overview
Type number |
Package |
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Name |
Philips |
PESD5V0L6UAS |
TSSOP8 |
SOT505-1 |
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PESD5V0L6US |
SO8 |
SOT96-1 |
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1.2 Features
■ ESD protection of up to six lines |
■ Ultra low leakage current: IRM = 8 nA |
■ Low diode capacitance |
■ ESD protection of up to 20 kV |
■ Max. peak pulse power: PPP = 35 W |
■ IEC 61000-4-2, level 4 (ESD) |
■ Low clamping voltage: V(CL)R = 15 V |
■ IEC 61000-4-5 (surge); IPP = 2.5 A. |
1.3 Applications
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Computers and peripherals |
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High speed data lines |
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Communication systems |
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Parallel ports. |
■ Audio and video equipment
1.4Quick reference data
Table 2: |
Quick reference data |
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Symbol |
Parameter |
Conditions |
Min |
Typ |
Max |
Unit |
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VRWM |
reverse stand-off voltage |
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- |
- |
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5 |
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V |
Cd |
diode capacitance |
VR = 0 V; |
- |
16 |
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19 |
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pF |
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f = 1 MHz |
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Philips Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
2. Pinning information
Table 3: |
Discrete pinning |
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Pin |
Description |
Simplified outline |
Symbol |
TSSOP8 |
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1 |
cathode 1 |
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2 |
cathode 2 |
3 |
cathode 3 |
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4 |
cathode 4 |
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5 |
cathode 5 |
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6 |
common anode |
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7 |
common anode |
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8 |
cathode 6 |
8 |
5 |
1 |
8 |
2 |
7 |
3 |
6 |
4 |
5 |
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sym004 |
1 |
4 |
SO8
1 |
cathode 1 |
2 |
cathode 2 |
3 |
cathode 3 |
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4 |
cathode 4 |
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5 |
cathode 5 |
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6 |
common anode |
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7 |
common anode |
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8 |
cathode 6 |
8 |
5 |
8 |
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1 |
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2 |
7 |
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3 |
6 |
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4 |
5 |
1 |
4 |
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sym004 |
3. Ordering information
Table 4: Ordering information
Type number |
Package |
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Name |
Description |
Version |
PESD5V0L6UAS |
TSSOP8 |
plastic thin shrink small outline package; 8 leads; |
SOT505-1 |
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body width 3 mm |
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PESD5V0L6US |
SO8 |
plastic small outline package; 8 leads; |
SOT96-1 |
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body width 3.9 mm |
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4. Marking
Table 5: Marking
Type number |
Marking code |
PESD5V0L6UAS |
5V06U |
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PESD5V0L6US |
5V06US |
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9397 750 13537 |
© Koninklijke Philips Electronics N.V. 2004. All rights reserved. |
Product data sheet |
Rev. 02 — 9 November 2004 |
2 of 14 |
Philips Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol |
Parameter |
Conditions |
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Min |
Max |
Unit |
Per diode |
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PPP |
peak pulse power |
8/20 μs pulse |
[1] [2] |
- |
35 |
W |
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IPP |
peak pulse current |
8/20 μs pulse |
[1] [2] |
- |
2.5 |
A |
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Tj |
junction temperature |
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- |
150 |
°C |
Tamb |
ambient temperature |
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−65 |
+150 |
°C |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
[1]Non-repetitive current pulse 8/20 μs exponentially decay waveform according to IEC 61000-4-5; see Figure 1.
[2]Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
Table 7: |
ESD maximum ratings |
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Symbol |
Parameter |
Conditions |
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Min |
Max |
Unit |
ESD |
electrostatic discharge |
IEC 61000-4-2 |
[1] |
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[2] |
- |
20 |
kV |
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capability |
(contact discharge) |
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HBM MIL-STD883 |
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10 |
kV |
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[1]Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
[2]Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
Table 8: ESD standards compliance
ESD Standard |
Conditions |
IEC 61000-4-2, level 4 (ESD); see Figure 2 |
> 15 kV (air); > 8 kV (contact) |
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HBM MIL-STD883, class 3 |
> 4 kV |
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9397 750 13537 |
© Koninklijke Philips Electronics N.V. 2004. All rights reserved. |
Product data sheet |
Rev. 02 — 9 November 2004 |
3 of 14 |
Philips Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
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001aaa191 |
120 |
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001aaa630 |
Ipp |
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100 % |
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Ipp |
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100 % Ipp; 8 μs |
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90 % |
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(%) |
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80 |
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e−t |
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50 % Ipp; 20 μs |
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40 |
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10 % |
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0 |
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tr = 0.7 to 1 ns |
t |
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30 ns |
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0 |
10 |
20 |
30 |
40 |
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t (μs) |
60 ns |
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Fig 1. 8/20 μs pulse waveform according to |
Fig 2. ElectroStatic Discharge (ESD) pulse waveform |
IEC 61000-4-5. |
according to IEC 61000-4-2. |
9397 750 13537 |
© Koninklijke Philips Electronics N.V. 2004. All rights reserved. |
Product data sheet |
Rev. 02 — 9 November 2004 |
4 of 14 |
Philips Semiconductors PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
6. Characteristics
Table 9: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol |
Parameter |
Conditions |
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Min |
Typ |
Max |
Unit |
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Per diode |
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VRWM |
reverse stand-off voltage |
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- |
- |
5 |
V |
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IRM |
reverse leakage current |
VRWM = 5 V |
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- |
8 |
25 |
nA |
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V |
(CL)R |
clamping voltage |
I = 1 A |
[1] [2] |
- |
- |
10 |
V |
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PP |
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IPP = 2.5 A |
[1] [2] |
- |
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15 |
V |
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V(BR) |
breakdown voltage |
IR = 1 mA |
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6.4 |
6.8 |
7.2 |
V |
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rdif |
differential resistance |
IR = 1 mA |
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- |
- |
100 |
Ω |
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Cd |
diode capacitance |
VR = 0 V; f = 1 MHz; |
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- |
16 |
19 |
pF |
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see Figure 5 |
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[1]Non-repetitive current pulse 8/20 μs exponentially decay waveform according to IEC 61000-4-5; see Figure 1.
[2]Measured between each cathode on pins 1, 2, 3, 4, 5 or 8 and anode on pin 6 or 7.
9397 750 13537 |
© Koninklijke Philips Electronics N.V. 2004. All rights reserved. |
Product data sheet |
Rev. 02 — 9 November 2004 |
5 of 14 |