Philips PESD5V0L6UAS, PESD5V0L6US Technical data
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PESD5V0L6UAS;
PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
Rev. 02 — 9 November 2004 Product data sheet
1. Product profile
1.1 General description
Low capacitance 6-fold ESD protection diode arrays in small plastic packages designed to
protect up to six transmission or data lines from the damage caused by ElectroStatic
Discharge (ESD) and other transients.
Table 1: Product overview
Type number Package
PESD5V0L6UAS TSSOP8 SOT505-1
PESD5V0L6US SO8 SOT96-1
Name Philips
1.2 Features
■ ESD protection of up to six lines ■ Ultra low leakage current: IRM = 8 nA
■ Low diode capacitance ■ ESD protection of up to 20 kV
■ Max. peak pulse power: PPP = 35 W ■ IEC 61000-4-2, level 4 (ESD)
■ Low clamping voltage: V
= 15 V ■ IEC 61000-4-5 (surge); IPP = 2.5 A.
(CL)R
1.3 Applications
■ Computers and peripherals ■ High speed data lines
■ Communication systems ■ Parallel ports.
■ Audio and video equipment
1.4 Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
C
RWM
d
reverse stand-off voltage - - 5 V
diode capacitance VR = 0 V;
f=1MHz
- 1619pF
Philips Semiconductors
2. Pinning information
Table 3: Discrete pinning
Pin Description Simplified outline Symbol
TSSOP8
1 cathode 1
2 cathode 2
3 cathode 3
4 cathode 4
5 cathode 5
6 common anode
7 common anode
8 cathode 6
SO8
1 cathode 1
2 cathode 2
3 cathode 3
4 cathode 4
5 cathode 5
6 common anode
7 common anode
8 cathode 6
PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
85
14
8
1
5
4
1
2
3
4
1
2
3
4
8
7
6
5
sym004
8
7
6
5
sym004
3. Ordering information
Table 4: Ordering information
Type number Package
Name Description Version
PESD5V0L6UAS TSSOP8 plastic thin shrink small outline package; 8 leads;
SOT505-1
body width 3 mm
PESD5V0L6US SO8 plastic small outline package; 8 leads;
SOT96-1
body width 3.9 mm
4. Marking
Table 5: Marking
Type number Marking code
PESD5V0L6UAS 5V06U
PESD5V0L6US 5V06US
9397 750 13537 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 9 November 2004 2 of 14
Philips Semiconductors
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
P
PP
I
PP
T
j
T
amb
T
stg
[1] Non-repetitive current pulse 8/20 µs exponentially decay waveform according to IEC 61000-4-5;
see Figure 1.
[2] Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
Table 7: ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
ESD electrostatic discharge
PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
peak pulse power 8/20 µs pulse
peak pulse current 8/20 µs pulse
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
IEC 61000-4-2
capability
(contact discharge)
HBM MIL-STD883 - 10 kV
[1] [2]
-35W
[1] [2]
- 2.5 A
[1] [2]
-20kV
[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
[2] Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
Table 8: ESD standards compliance
ESD Standard Conditions
IEC 61000-4-2, level 4 (ESD); see
Figure 2 > 15 kV (air); > 8 kV (contact)
HBM MIL-STD883, class 3 > 4 kV
9397 750 13537 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 9 November 2004 3 of 14
Philips Semiconductors
120
I
(%)
pp
100 % Ipp; 8 µs
PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
001aaa191
I
001aaa630
pp
100 %
90 %
80
40
0
0403010 20
−t
e
; 20 µs
50 % I
pp
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5.
10 %
tr = 0.7 to 1 ns
30 ns
60 ns
t
Fig 2. ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2.
9397 750 13537 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 9 November 2004 4 of 14
Philips Semiconductors
PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
6. Characteristics
Table 9: Characteristics
T
= 25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
RWM
I
RM
V
(CL)R
V
(BR)
r
dif
C
d
[1] Non-repetitive current pulse 8/20 µs exponentially decay waveform according to IEC 61000-4-5; see Figure 1.
[2] Measured between each cathode on pins 1, 2, 3, 4, 5 or 8 and anode on pin 6 or 7.
reverse stand-off voltage - - 5 V
reverse leakage current V
clamping voltage IPP = 1 A
= 5 V - 8 25 nA
RWM
[1] [2]
--10V
= 2.5 A
I
PP
[1] [2]
--15V
breakdown voltage IR = 1 mA 6.4 6.8 7.2 V
differential resistance IR = 1 mA - - 100 Ω
diode capacitance VR = 0 V; f = 1 MHz;
see
Figure 5
- 1619pF
9397 750 13537 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 9 November 2004 5 of 14
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