Philips PESD5V0L6UAS, PESD5V0L6US Technical data

PESD5V0L6UAS

PESD5V0L6UAS;

PESD5V0L6US

Low capacitance 6-fold ESD protection diode arrays

Rev. 02 — 9 November 2004	Product data sheet

1.Product profile

1.1General description

Low capacitance 6-fold ESD protection diode arrays in small plastic packages designed to protect up to six transmission or data lines from the damage caused by ElectroStatic Discharge (ESD) and other transients.

Table 1: Product overview

Type number	Package
	Name	Philips
PESD5V0L6UAS	TSSOP8	SOT505-1
PESD5V0L6US	SO8	SOT96-1

1.2 Features

■ ESD protection of up to six lines	■ Ultra low leakage current: IRM = 8 nA
■ Low diode capacitance	■ ESD protection of up to 20 kV
■ Max. peak pulse power: PPP = 35 W	■ IEC 61000-4-2, level 4 (ESD)
■ Low clamping voltage: V(CL)R = 15 V	■ IEC 61000-4-5 (surge); IPP = 2.5 A.

1.3 Applications

■	Computers and peripherals	■	High speed data lines
■	Communication systems	■	Parallel ports.

■ Audio and video equipment

1.4Quick reference data

Table 2:	Quick reference data
Symbol	Parameter	Conditions	Min	Typ		Max			Unit
VRWM	reverse stand-off voltage		-	-		5			V
Cd	diode capacitance	VR = 0 V;	-	16		19			pF
		f = 1 MHz

Philips Semiconductors PESD5V0L6UAS; PESD5V0L6US

Low capacitance 6-fold ESD protection diode arrays

2. Pinning information

Table 3:	Discrete pinning
Pin	Description	Simplified outline	Symbol
TSSOP8
1	cathode 1

2	cathode 2
3	cathode 3
4	cathode 4
5	cathode 5
6	common anode
7	common anode
8	cathode 6

8

5

1	8
2	7
3	6
4	5
	sym004

1

4

SO8

1

cathode 1

2	cathode 2
3	cathode 3
4	cathode 4
5	cathode 5
6	common anode
7	common anode
8	cathode 6

8	5	8
	1
	2	7
	3	6
	4	5
1	4
		sym004

3. Ordering information

Table 4: Ordering information

Type number	Package
	Name	Description	Version
PESD5V0L6UAS	TSSOP8	plastic thin shrink small outline package; 8 leads;	SOT505-1
		body width 3 mm
PESD5V0L6US	SO8	plastic small outline package; 8 leads;	SOT96-1
		body width 3.9 mm

4. Marking

Table 5: Marking

Type number	Marking code
PESD5V0L6UAS	5V06U
PESD5V0L6US	5V06US

9397 750 13537

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 02 — 9 November 2004

2 of 14

Philips Semiconductors PESD5V0L6UAS; PESD5V0L6US

Low capacitance 6-fold ESD protection diode arrays

5. Limiting values

Table 6: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions				Min	Max	Unit
Per diode
PPP	peak pulse power	8/20 μs pulse	[1] [2]			-	35	W
IPP	peak pulse current	8/20 μs pulse	[1] [2]			-	2.5	A
Tj	junction temperature					-	150	°C
Tamb	ambient temperature					−65	+150	°C
Tstg	storage temperature					−65	+150	°C

[1]Non-repetitive current pulse 8/20 μs exponentially decay waveform according to IEC 61000-4-5; see Figure 1.

[2]Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.

Table 7:	ESD maximum ratings
Symbol	Parameter	Conditions				Min	Max	Unit
ESD	electrostatic discharge	IEC 61000-4-2	[1]		[2]	-	20	kV
	capability	(contact discharge)
		HBM MIL-STD883	-				10	kV

[1]Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.

[2]Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.

Table 8: ESD standards compliance

ESD Standard	Conditions
IEC 61000-4-2, level 4 (ESD); see Figure 2	> 15 kV (air); > 8 kV (contact)
HBM MIL-STD883, class 3	> 4 kV

9397 750 13537

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 02 — 9 November 2004

3 of 14

Philips Semiconductors PESD5V0L6UAS; PESD5V0L6US

Low capacitance 6-fold ESD protection diode arrays

						001aaa191
120				001aaa630	Ipp
					100 %
Ipp		100 % Ipp; 8 μs			90 %
(%)
80		e−t
			50 % Ipp; 20 μs
40
					10 %
0					tr = 0.7 to 1 ns	t
					30 ns
0	10	20	30	40
				t (μs)	60 ns

Fig 1. 8/20 μs pulse waveform according to	Fig 2. ElectroStatic Discharge (ESD) pulse waveform
IEC 61000-4-5.	according to IEC 61000-4-2.

9397 750 13537

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 02 — 9 November 2004

4 of 14

Philips Semiconductors PESD5V0L6UAS; PESD5V0L6US

Low capacitance 6-fold ESD protection diode arrays

6. Characteristics

Table 9: Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol		Parameter	Conditions				Min	Typ	Max	Unit
Per diode
VRWM		reverse stand-off voltage					-	-	5	V
IRM		reverse leakage current	VRWM = 5 V				-	8	25	nA
V	(CL)R	clamping voltage	I = 1 A	[1] [2]			-	-	10	V
			PP
			IPP = 2.5 A	[1] [2]			-	-	15	V
V(BR)		breakdown voltage	IR = 1 mA				6.4	6.8	7.2	V
rdif		differential resistance	IR = 1 mA				-	-	100	Ω
Cd		diode capacitance	VR = 0 V; f = 1 MHz;				-	16	19	pF
			see Figure 5

[1]Non-repetitive current pulse 8/20 μs exponentially decay waveform according to IEC 61000-4-5; see Figure 1.

[2]Measured between each cathode on pins 1, 2, 3, 4, 5 or 8 and anode on pin 6 or 7.

9397 750 13537

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 02 — 9 November 2004

5 of 14