Philips PESD3V3L5UY, PESD5V0L5UY Technical data

PESD3V3L5UY

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

MBD128

PESD3V3L5UY; PESD5V0L5UY

Low capacitance 5-fold ESD protection diode arrays in SOT363 package

Product specification			2004 Mar 23

Philips Semiconductors	Product specification
Low capacitance 5-fold ESD protection	PESD3V3L5UY;
diode arrays in SOT363 package	PESD5V0L5UY

FEATURES

∙Uni-directional ESD protection of up to five lines

∙Bi-directional ESD protection of up to four lines

∙Low diode capacitance

∙Maximum peak pulse power: Ppp = 25 W at tp = 8/20 μs

∙Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A

∙Ultra low leakage current: IRM = 8 nA at VRWM = 5 V

∙ESD protection > 20 kV

∙IEC 61000-4-2; level 4 (ESD)

∙IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 μs.

APPLICATIONS

∙Cellular handsets and accessories

∙Portable electronics

∙Computers and peripherals

∙Communications systems

∙Audio and video equipment.

DESCRIPTION

Low capacitance 5-fold ESD protection array in the very small SOT363 plastic package designed to protect up to five transmission or data lines from the damage caused by Electrostatic Discharge (ESD).

MARKING

TYPE NUMBER	MARKING CODE(1)
PESD3V3L5UY	*K3
PESD5V0L5UY	*K4

Note

1.* = p: Made in Hong Kong.

*= t: Made in Malaysia.

*= W: Made in China.

ORDERING INFORMATION

QUICK REFERENCE DATA

SYMBOL		PARAMETER	VALUE	UNIT
VRWM	reverse standoff voltage
		PESD3V3L5UY	3.3	V
		PESD5V0L5UY	5	V
Cd	diode capacitance
		PESD3V3L5UY	22	pF
		PESD5V0L5UY	16	pF
	number of protected lines		5
PINNING
PIN		DESCRIPTION
1		cathode 1
2		common anode
3		cathode 2
4		cathode 3
5		cathode 4
6		cathode 5

6 5 4

1

3

4 2

5

6

1

2

3

sym011

001aaa212

Fig.1 Simplified outline (SOT363) and symbol.

	TYPE NUMBER		PACKAGE
		NAME	DESCRIPTION	VERSION
	PESD3V3L5UY	−	plastic surface mounted package; 6 leads	SOT363
	PESD5V0L5UY	−	plastic surface mounted package; 6 leads	SOT363

2004 Mar 23

2

Philips Semiconductors Product specification

Low capacitance 5-fold ESD protection			PESD3V3L5UY;
diode arrays in SOT363 package			PESD5V0L5UY
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
Per diode
Ppp	peak pulse power	8/20 μs pulse; notes 1 and 2	−	25	W
Ipp	peak pulse current	8/20 μs pulse; notes 1 and 2	−	2.5	A
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C
Tstg	storage temperature		−65	+150	°C

Notes

1.Non-repetitive current pulse 8/20 μs exponentially decaying waveform; see Fig.2.

2.Measured from any of pins 1, 3, 4, 5 or 6 to pin 2.

ESD maximum ratings

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Per diode
ESD	electrostatic discharge capability	IEC 61000-4-2 (contact discharge);	20	kV
		notes 1 and 2
		HBM MIL-Std 883	10	kV

Notes

1.Device stressed with ten non-repetitive Electrostatic Discharge (ESD) pulses; see Fig.3.

2.Measured from any of pins 1, 3, 4, 5 or 6 to pin 2.

ESD standards compliance

ESD STANDARD	CONDITIONS
IEC 61000-4-2, level 4 (ESD)	> 15 kV (air); > 8 kV (contact)
HBM MIL-Std 883, class 3	> 4 kV

2004 Mar 23

3

Philips Semiconductors	Product specification
Low capacitance 5-fold ESD protection	PESD3V3L5UY;
diode arrays in SOT363 package	PESD5V0L5UY

						001aaa191
120			MLE218		Ipp
handbook, halfpage					100 %
Ipp			μs
		100 % Ipp; 8			90 %
(%)
80		e−t
			50 % Ipp; 20 μs
40
					10 %
0	10	20	30	40	tr = 0.7 to 1 ns	t
0					30 ns
			t (μs)
					60 ns

Fig.2 8/20 μs pulse waveform according to	Fig.3 Electrostatic Discharge (ESD) pulse
IEC 61000-4-5.	waveform according to IEC 61000-4-2.

2004 Mar 23

4