Philips PESD3V3L5UV, PESD5V0L5UV User Manual

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DISCRETE SEMICONDUCTORS

DATA SH EET

M3D744

PESD3V3L5UV; PESD5V0L5UV

Low capacitance 5-fold ESD
protection diode arrays in SOT666
package

Product specification 2004 Mar 23

Philips Semiconductors Product specification

Low capacitance 5-fold ESD protection
diode arrays in SOT666 package

FEATURES

• Uni-directional ESD protection of up to five lines

• Bi-directional ESD protection of up to four lines

• Low diode capacitance

• Maximum peak pulse power: Ppp= 25 W at tp= 8/20µs

• Low clamping voltage: V

• Ultra low leakage current: IRM= 8 nA at V

• ESD protection > 20 kV

• IEC 61000-4-2; level 4 (ESD)

• IEC 61000-4-5 (surge); Ipp= 2.5 A at Tp= 8/20 µs.

APPLICATIONS

• Cellular handsets and accessories

• Portable electronics

• Computers and peripherals

• Communications systems

• Audio and video equipment.

DESCRIPTION

= 12 V at Ipp= 2.5 A

CL(R)

RWM

=5V

PESD3V3L5UV;

PESD5V0L5UV

QUICK REFERENCE DATA

SYMBOL PARAMETER VALUE UNIT

V

RWM

C

d

PINNING

PIN DESCRIPTION

reverse standoff voltage

PESD3V3L5UV 3.3 V
PESD5V0L5UV 5 V

diode capacitance

PESD3V3L5UV 22 pF
PESD5V0L5UV 16 pF

number of protected lines 5

1 cathode 1
2 common anode
3 cathode 2
4 cathode 3
5 cathode 4
6 cathode 5

Low capacitance 5-fold ESD protection array in the ultra
small SOT666 plastic package designed to protect up to
five transmissionor data lines from the damage caused by
Electrostatic Discharge (ESD).

MARKING

TYPE NUMBER MARKING CODE

(1)

456

1
3
42
5
6

PESD3V3L5UV *E1
PESD5V0L5UV *E2

132

001aaa213

sym011

Note

1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.

Fig.1 Simplified outline (SOT666) and symbol.

* = W: Made in China.

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

PESD3V3L5UV − plastic surface mounted package; 6 leads SOT666
PESD5V0L5UV − plastic surface mounted package; 6 leads SOT666

2004 Mar 23 2

Philips Semiconductors Product specification

Low capacitance 5-fold ESD protection
diode arrays in SOT666 package

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

P

pp

I

pp

T

j

T

amb

T

stg

Notes

1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Fig.2.

2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2.

ESD maximum ratings

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Per diode

ESD electrostatic discharge capability IEC 61000-4-2 (contact

peak pulse power 8/20 µs pulse; notes 1 and 2 − 25 W
peak pulse current 8/20 µs pulse; notes 1 and 2 − 2.5 A
junction temperature − 150 °C
operation ambient temperature −65 +150 °C
storage temperature −65 +150 °C

discharge); notes 1 and 2
HBM MIL-Std 883 10 kV

PESD3V3L5UV;

PESD5V0L5UV

20 kV

Notes

1. Device stressed with ten non-repetitive Electrostatic Discharge (ESD) pulses; see Fig.3.

2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2.

ESD standards compliance

ESD STANDARD CONDITIONS

IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact)
HBM MIL-Std 883, class 3 > 4 kV

2004 Mar 23 3

Philips Semiconductors Product specification

Low capacitance 5-fold ESD protection
diode arrays in SOT666 package

120

handbook, halfpage

I

pp

(%)

80

40

0

010

100 % Ipp; 8 µs

−t

e

20

50 % Ipp; 20 µs

MLE218

t (µs)

40

30

100 %

90 %

10 %

PESD3V3L5UV;

PESD5V0L5UV

001aaa191

I

pp

tr = 0.7 to 1 ns

30 ns

60 ns

t

Fig.2 8/20 µs pulse waveform according to

IEC 61000-4-5.

Fig.3 Electrostatic Discharge (ESD) pulse

waveform according to IEC 61000-4-2.

2004 Mar 23 4