PESD3V3L5UY
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PESD3V3L5UY; PESD5V0L5UY
Low capacitance 5-fold ESD protection diode arrays in SOT363 package
Product specification |
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2004 Mar 23 |
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Philips Semiconductors |
Product specification |
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Low capacitance 5-fold ESD protection |
PESD3V3L5UY; |
diode arrays in SOT363 package |
PESD5V0L5UY |
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FEATURES
∙Uni-directional ESD protection of up to five lines
∙Bi-directional ESD protection of up to four lines
∙Low diode capacitance
∙Maximum peak pulse power: Ppp = 25 W at tp = 8/20 μs
∙Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A
∙Ultra low leakage current: IRM = 8 nA at VRWM = 5 V
∙ESD protection > 20 kV
∙IEC 61000-4-2; level 4 (ESD)
∙IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 μs.
APPLICATIONS
∙Cellular handsets and accessories
∙Portable electronics
∙Computers and peripherals
∙Communications systems
∙Audio and video equipment.
DESCRIPTION
Low capacitance 5-fold ESD protection array in the very small SOT363 plastic package designed to protect up to five transmission or data lines from the damage caused by Electrostatic Discharge (ESD).
MARKING
TYPE NUMBER |
MARKING CODE(1) |
PESD3V3L5UY |
*K3 |
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PESD5V0L5UY |
*K4 |
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Note
1.* = p: Made in Hong Kong.
*= t: Made in Malaysia.
*= W: Made in China.
ORDERING INFORMATION
QUICK REFERENCE DATA
SYMBOL |
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PARAMETER |
VALUE |
UNIT |
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VRWM |
reverse standoff voltage |
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PESD3V3L5UY |
3.3 |
V |
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PESD5V0L5UY |
5 |
V |
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Cd |
diode capacitance |
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PESD3V3L5UY |
22 |
pF |
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PESD5V0L5UY |
16 |
pF |
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number of protected lines |
5 |
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PINNING |
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PIN |
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DESCRIPTION |
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1 |
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cathode 1 |
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2 |
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common anode |
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3 |
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cathode 2 |
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4 |
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cathode 3 |
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5 |
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cathode 4 |
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6 |
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cathode 5 |
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6 5 4
1
3
4 2
5
6
1 |
2 |
3 |
sym011 |
001aaa212
Fig.1 Simplified outline (SOT363) and symbol.
TYPE NUMBER |
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PACKAGE |
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NAME |
DESCRIPTION |
VERSION |
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PESD3V3L5UY |
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plastic surface mounted package; 6 leads |
SOT363 |
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PESD5V0L5UY |
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plastic surface mounted package; 6 leads |
SOT363 |
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2004 Mar 23 |
2 |
Philips Semiconductors Product specification
Low capacitance 5-fold ESD protection |
PESD3V3L5UY; |
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diode arrays in SOT363 package |
PESD5V0L5UY |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 60134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode |
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Ppp |
peak pulse power |
8/20 μs pulse; notes 1 and 2 |
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25 |
W |
Ipp |
peak pulse current |
8/20 μs pulse; notes 1 and 2 |
− |
2.5 |
A |
Tj |
junction temperature |
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150 |
°C |
Tamb |
operating ambient temperature |
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−65 |
+150 |
°C |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Notes
1.Non-repetitive current pulse 8/20 μs exponentially decaying waveform; see Fig.2.
2.Measured from any of pins 1, 3, 4, 5 or 6 to pin 2.
ESD maximum ratings
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Per diode |
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ESD |
electrostatic discharge capability |
IEC 61000-4-2 (contact discharge); |
20 |
kV |
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notes 1 and 2 |
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HBM MIL-Std 883 |
10 |
kV |
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Notes
1.Device stressed with ten non-repetitive Electrostatic Discharge (ESD) pulses; see Fig.3.
2.Measured from any of pins 1, 3, 4, 5 or 6 to pin 2.
ESD standards compliance
ESD STANDARD |
CONDITIONS |
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IEC 61000-4-2, level 4 (ESD) |
> 15 kV (air); > 8 kV (contact) |
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HBM MIL-Std 883, class 3 |
> 4 kV |
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2004 Mar 23 |
3 |
Philips Semiconductors |
Product specification |
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Low capacitance 5-fold ESD protection |
PESD3V3L5UY; |
diode arrays in SOT363 package |
PESD5V0L5UY |
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001aaa191 |
120 |
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MLE218 |
Ipp |
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handbook, halfpage |
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100 % |
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Ipp |
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μs |
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100 % Ipp; 8 |
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90 % |
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(%) |
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80 |
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e−t |
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50 % Ipp; 20 μs |
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40 |
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10 % |
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0 |
10 |
20 |
30 |
40 |
tr = 0.7 to 1 ns |
t |
0 |
30 ns |
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t (μs) |
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60 ns |
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Fig.2 8/20 μs pulse waveform according to |
Fig.3 Electrostatic Discharge (ESD) pulse |
IEC 61000-4-5. |
waveform according to IEC 61000-4-2. |
2004 Mar 23 |
4 |