Philips PESD3V3L5UV, PESD5V0L5UV Technical data
DATA SH EET
Product specification 2004 Mar 23
DISCRETE SEMICONDUCTORS
PESD3V3L5UV; PESD5V0L5UV
Low capacitance 5-fold ESD
protection diode arrays in SOT666
package
M3D744
查询PESD3V3L5UV供应商
2004 Mar 23 2
Philips Semiconductors Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT666 package
PESD3V3L5UV;
PESD5V0L5UV
FEATURES
• Uni-directional ESD protection of up to five lines
• Bi-directional ESD protection of up to four lines
• Low diode capacitance
• Maximum peak pulse power: P
pp
= 25 W at t
p
= 8/20µs
• Low clamping voltage: V
CL(R)
= 12 V at I
pp
= 2.5 A
• Ultra low leakage current: I
RM
= 8 nA at V
RWM
=5V
• ESD protection > 20 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); I
pp
= 2.5 A at T
p
= 8/20 µs.
APPLICATIONS
• Cellular handsets and accessories
• Portable electronics
• Computers and peripherals
• Communications systems
• Audio and video equipment.
DESCRIPTION
Low capacitance 5-fold ESD protection array in the ultra
small SOT666 plastic package designed to protect up to
five transmissionor data lines from the damage caused by
Electrostatic Discharge (ESD).
MARKING
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER MARKING CODE
(1)
PESD3V3L5UV *E1
PESD5V0L5UV *E2
PINNING
PIN DESCRIPTION
1 cathode 1
2 common anode
3 cathode 2
4 cathode 3
5 cathode 4
6 cathode 5
001aaa213
132
456
1
3
42
5
6
sym011
Fig.1 Simplified outline (SOT666) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER VALUE UNIT
V
RWM
reverse standoff voltage
PESD3V3L5UV 3.3 V
PESD5V0L5UV 5 V
C
d
diode capacitance
PESD3V3L5UV 22 pF
PESD5V0L5UV 16 pF
number of protected lines 5
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PESD3V3L5UV − plastic surface mounted package; 6 leads SOT666
PESD5V0L5UV − plastic surface mounted package; 6 leads SOT666
2004 Mar 23 3
Philips Semiconductors Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT666 package
PESD3V3L5UV;
PESD5V0L5UV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Fig.2.
2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2.
ESD maximum ratings
Notes
1. Device stressed with ten non-repetitive Electrostatic Discharge (ESD) pulses; see Fig.3.
2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2.
ESD standards compliance
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
P
pp
peak pulse power 8/20 µs pulse; notes 1 and 2 − 25 W
I
pp
peak pulse current 8/20 µs pulse; notes 1 and 2 − 2.5 A
T
j
junction temperature − 150 °C
T
amb
operation ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per diode
ESD electrostatic discharge capability IEC 61000-4-2 (contact
discharge); notes 1 and 2
20 kV
HBM MIL-Std 883 10 kV
ESD STANDARD CONDITIONS
IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact)
HBM MIL-Std 883, class 3 > 4 kV
2004 Mar 23 4
Philips Semiconductors Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT666 package
PESD3V3L5UV;
PESD5V0L5UV
handbook, halfpage
010
e
−t
20
t (µs)
I
pp
(%)
40
120
0
40
80
30
MLE218
100 % I
pp
; 8 µs
50 % I
pp
; 20 µs
Fig.2 8/20 µs pulse waveform according to
IEC 61000-4-5.
001aaa191
I
pp
100 %
90 %
t
30 ns
60 ns
10 %
t
r
= 0.7 to 1 ns
Fig.3 Electrostatic Discharge (ESD) pulse
waveform according to IEC 61000-4-2.
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