Philips PESD1LIN Technical data
查询PESD1LIN供应商
PESD1LIN
LIN bus ESD protection diode in SOD323
Rev. 01 — 26 October 2004 Product data sheet
1. Product profile
1.1 General description
PESD1LIN in very small SOD323 (SC-76) SMD plastic package designed to protect one
automotive LIN bus line from the damage caused by ElectroStatic Discharge (ESD) and
other transients.
1.2 Features
■ ESD protection of one automotive LIN bus line
■ Asymmetrical diode configurationensuresanoptimized Electromagnetical Immunity of
a LIN Electronic Control Unit (ECU)
■ Due to the integrated diode structure only one very small SOD323 package is needed
■ Max. peak pulse power: PPP = 160 W at tp = 8/20 µs
■ Low clamping voltage: V
■ Ultra low leakage current: IRM < 1 nA
■ ESD protection of up to 23 kV
■ IEC 61000-4-2, level 4 (ESD)
■ IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 µs
= 40 V at IPP = 1 A
(CL)R
1.3 Applications
■ LIN bus protection
■ Automotive applications
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
C
RWM
d
reverse stand-off voltage
PESD1LIN (15 V) - - 15 V
PESD1LIN (24 V) - - 24 V
diode capacitance VR = 0 V;
f = 1 MHz
- 1317pF
Philips Semiconductors
2. Pinning information
Table 2: Pinning
Pin Description Simplified outline Symbol
1 cathode 1 (15 V)
2 cathode 2 (24 V)
3. Ordering information
Table 3: Ordering information
Type number Package
PESD1LIN SC-76 plastic surface mounted package; 2 leads SOD323
PESD1LIN
LIN bus ESD protection diode in SOD323
21
sym045
Name Description Version
21
4. Marking
Table 4: Marking codes
Type number Marking code
PESD1LIN AM
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
PP
I
PP
T
j
T
amb
T
stg
[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Figure 1.
peak pulse power 8/20 µs
peak pulse current 8/20 µs
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
[1]
- 160 W
[1]
-3A
9397 750 14032 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 01 — 26 October 2004 2 of 12
Philips Semiconductors
Table 6: ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
ESD electrostatic discharge
[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
Table 7: ESD standards compliance
ESD Standard Conditions
IEC 61000-4-2, level 4 (ESD); see
HBM MIL-STD883, class 3 > 4 kV
120
I
(%)
pp
100 % Ipp; 8 µs
capability
001aaa630
PESD1LIN
LIN bus ESD protection diode in SOD323
[1]
IEC 61000-4-2
(contact discharge)
HBM MIL-STD883 - 10 kV
Figure 2 > 15 kV (air); > 8 kV (contact)
I
pp
100 %
90 %
-23kV
001aaa631
80
40
0
0403010 20
−t
e
; 20 µs
50 % I
pp
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5.
10 %
tr = 0.7 to 1 ns
30 ns
60 ns
t
Fig 2. ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2.
9397 750 14032 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 01 — 26 October 2004 3 of 12
Philips Semiconductors
PESD1LIN
LIN bus ESD protection diode in SOD323
6. Characteristics
Table 8: Characteristics
T
= 25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
V
I
RM
V
C
V
r
dif
RWM
(BR)
d
(CL)R
reverse stand-off voltage
PESD1LIN (15 V) - - 15 V
PESD1LIN (24 V) - - 24 V
reverse leakage current
PESD1LIN (15 V) V
PESD1LIN (24 V) V
= 15 V - < 1 50 nA
RWM
= 24 V - < 1 50 nA
RWM
breakdown voltage IR = 5 mA
PESD1LIN (15 V) 17.1 18.9 20.3 V
PESD1LIN (24 V) 25.4 27.8 30.3 V
diode capacitance VR = 0 V; f = 1 MHz - 13 17 pF
clamping voltage
[1]
PESD1LIN (15 V) IPP = 1 A - - 25 V
= 5 A - - 44 V
I
PP
PESD1LIN (24 V) I
= 1 A - - 40 V
PP
= 3 A - - 70 V
I
PP
differential resistance
PESD1LIN (15 V) I
PESD1LIN (24 V) I
= 1 mA - - 225 Ω
R
= 1 mA - - 300 Ω
R
[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Figure 1.
9397 750 14032 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 01 — 26 October 2004 4 of 12
Loading...