Datasheet PESD1CAN Datasheet (Philips)

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PESD1CAN

CAN bus ESD protection diode in SOT23

Rev. 01 — 25 January 2005 Objective data sheet

1. Product proﬁle

1.1 General description

PESD1CAN in small SOT23 SMD plastic package designed to protect two automotive Control Area Network (CAN) bus lines from the damage caused by ElectroStatic Discharge (ESD) and other transients.

1.2 Features

■ Due to the integrated diode structure only one small SOT23 package is needed to

protect two CAN bus lines

■ Max. peak pulse power: Ppp = 200 W at tp = 8/20 µs

■ Low clamping voltage: V

■ Ultra low leakage current: IRM < 1 nA

■ ESD protection of up to 23 kV

■ IEC 61000-4-2, level 4 (ESD)

■ IEC 61000-4-5 (surge); Ipp = 3 A at tp = 8/20 µs

■ Small SMD plastic package

= 40 V at Ipp = 1 A

(CL)R

1.3 Applications

■ CAN bus protection

■ Automotive applications

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V C

RWM d

reverse stand-off voltage - - 24 V diode capacitance VR = 0 V;

f=1MHz

-11-pF

Philips Semiconductors

2. Pinning information

Table 2: Pinning

Pin Description Simpliﬁed outline Symbol

1 cathode 1 2 cathode 2 3 double cathode

3. Ordering information

Table 3: Ordering information

Type number Package

PESD1CAN - plastic surface mounted package; 3 leads SOT23

PESD1CAN

CAN bus ESD protection diode in SOT23

SOT23

Name Description Version

006aaa155

4. Marking

Table 4: Marking codes

Type number Marking code

PESD1CAN *AN

[1] * = p: made in Hong Kong

* = t: made in Hong Kong * = W: made in China

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

amb

stg

[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see

Figure 1.

[2] Measured from pin 1 to 3 or 2 to 3.

[1]

peak pulse power 8/20 µs peak pulse current 8/20 µs

[1] [2]

- 200 W

[1] [2]

-3A junction temperature - 150 °C ambient temperature −65 +150 °C storage temperature −65 +150 °C

Objective data sheet Rev. 01 — 25 January 2005 2 of 12

Philips Semiconductors

Table 6: ESD maximum ratings

Symbol Parameter Conditions Min Max Unit

ESD electrostatic discharge

[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2. [2] Measured from pin 1 to 3 or 2 to 3.

Table 7: ESD standards compliance

ESD Standard Conditions

IEC 61000-4-2, level 4 (ESD); see HBM MIL-STD883, class 3 > 4 kV

120

(%)

100 % Ipp; 8 µs

capability

001aaa630

PESD1CAN

CAN bus ESD protection diode in SOT23

[1] [2]

IEC 61000-4-2 (contact discharge)

HBM MIL-STD883 - 10 kV

Figure 2 > 15 kV (air); > 8 kV (contact)

100 %

90 %

-23kV

001aaa631

0403010 20

−t

; 20 µs

50 % I

t (µs)

Fig 1. 8/20 µs pulse waveform according to

IEC 61000-4-5

10 %

tr = 0.7 to 1 ns

30 ns

60 ns

Fig 2. ElectroStatic Discharge (ESD) pulse waveform

according to IEC 61000-4-2

Objective data sheet Rev. 01 — 25 January 2005 3 of 12

Philips Semiconductors

PESD1CAN

CAN bus ESD protection diode in SOT23

6. Characteristics

Table 8: Characteristics

= 25°C unless otherwise speciﬁed.

amb

Symbol Parameter Conditions Min Typ Max Unit

RWM

(BR)

(CL)R

dif

[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1. [2] Measured from pin 1 to 3 or 2 to 3.

reverse stand-off voltage - - 24 V reverse leakage current V

= 24 V - < 1 50 nA

RWM

breakdown voltage IR = 5 mA 25.4 27.8 30.3 V diode capacitance VR = 0 V; f = 1 MHz;

see

Figure 5

clamping voltage IPP = 1 A

= 3 A

-11-pF

[1] [2]

--40V

[1] [2]

--70V

differential resistance IR = 1 mA - - 300 Ω

Objective data sheet Rev. 01 — 25 January 2005 4 of 12

Philips Semiconductors

PESD1CAN

CAN bus ESD protection diode in SOT23

006aaa257

(µs)

(W)

110

amb

10 10

= 25 °C.

Fig 3. Peak pulse power as a function of exponential

pulse duration t

; typical values

(pF)

1.2

pp(25˚C)

0.8

0.4

0 20015050 100

001aaa193

Tj (°C)

Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical values

006aaa258

= 25 °C; f = 1 MHz.

amb

0252010 155

VR (V)

Fig 5. Diode capacitance as a function of reverse voltage; typical values

Objective data sheet Rev. 01 — 25 January 2005 5 of 12

Philips Semiconductors

PESD1CAN

CAN bus ESD protection diode in SOT23

ESD TESTER

IEC 61000-4-2 network

= 150 pF; RZ = 330 Ω

GND

unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network)

450 Ω

D.U.T.

(Device

Under

Test)

vertical scale = 200 V/div horizontal scale = 50 ns/div

RG 223/U 50 Ω coax

vertical scale = 20 V/div; horizontal scale = 50 ns/div

GND

clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network)

10×

ATTENUATOR

4 GHz DIGITAL

OSCILLOSCOPE

50 Ω

GND

vertical scale = 200 V/div horizontal scale = 50 ns/div

unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network)

Fig 6. ESD clamping test set-up and waveforms

vertical scale = 20 V/div; horizontal scale = 50 ns/div

GND

clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network)

006aaa259

Objective data sheet Rev. 01 — 25 January 2005 6 of 12

Philips Semiconductors

7. Application information

The PESD1CAN is designed for the protection of two automotive CAN bus lines from the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESD1CAN provides a surge capability of up to 200 W per line for a 8/20 µs waveform.

Fig 7. Typical application: ESD protection of two automotive CAN bus lines

PESD1CAN

CAN bus ESD protection diode in SOT23

line 1 to be protected line 2 to be protected

PESD1CAN

GND

006aaa260

Circuit board layout and protection device placement:

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended:

1. Place the protection device as close to the input terminal or connector as possible.

2. The path length between the protection device and the protected line should be minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protection conductors in parallel with unprotected conductor.

5. Minimize all printed-circuit board conductive loops including power and ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer printed-circuit boards, use ground vias.

Objective data sheet Rev. 01 — 25 January 2005 7 of 12

Philips Semiconductors

PESD1CAN

CAN bus ESD protection diode in SOT23

8. Package outline

Plastic surface mounted package; 3 leads SOT23

w M

detail X

v M

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

OUTLINE

VERSION

SOT23 TO-236AB

1.1

0.9

max.

0.1

0.48

0.15

0.38

0.09

IEC JEDEC JEITA

3.0

2.8

1.4

1.2

REFERENCES

1.9

0.45

0.15

Qwv

0.55

0.2

0.45

0.1

EUROPEAN

PROJECTION

ISSUE DATE

99-09-13 04-11-04

2.5

0.95

2.1

Fig 8. Package outline SOT23 (TO-236AB)

Objective data sheet Rev. 01 — 25 January 2005 8 of 12

Philips Semiconductors

9. Packing information

PESD1CAN

CAN bus ESD protection diode in SOT23

Table 9: Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PESD1CAN SOT23 4 mm pitch, 8 mm tape and reel -215 -235

[1] For further information and the availability of packing methods, seeSection 14.

[1]

3000 10000

Objective data sheet Rev. 01 — 25 January 2005 9 of 12

Philips Semiconductors

CAN bus ESD protection diode in SOT23

PESD1CAN

10. Revision history

Table 10: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

PESD1CAN_1 20050125 Objective data sheet - 9397 750 14197 -

Objective data sheet Rev. 01 — 25 January 2005 10 of 12

Philips Semiconductors

11. Data sheet status

PESD1CAN

CAN bus ESD protection diode in SOT23

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheet containsdata from thepreliminary speciﬁcation.Supplementary datawill be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warrantythat such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a laterdate. Philips Semiconductors reserves theright to changethe speciﬁcation without notice, in order to improve the design and supply the best possible product.

right to make changesat any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, andmakes norepresentations or warrantiesthat theseproducts are free frompatent, copyright, ormask work right infringement, unlessotherwise speciﬁed.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Objective data sheet Rev. 01 — 25 January 2005 11 of 12

Philips Semiconductors

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 7

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Contact information . . . . . . . . . . . . . . . . . . . . 11

PESD1CAN

CAN bus ESD protection diode in SOT23

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form partof any quotation or contract, is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 25 January 2005

Document number: 9397 750 14197

Datasheet PESD1CAN Datasheet (Philips)

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