Philips PESD1CAN Technical data
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PESD1CAN
CAN bus ESD protection diode in SOT23
Rev. 01 — 25 January 2005 Objective data sheet
1. Product profile
1.1 General description
PESD1CAN in small SOT23 SMD plastic package designed to protect two automotive
Control Area Network (CAN) bus lines from the damage caused by ElectroStatic
Discharge (ESD) and other transients.
1.2 Features
■ Due to the integrated diode structure only one small SOT23 package is needed to
protect two CAN bus lines
■ Max. peak pulse power: Ppp = 200 W at tp = 8/20 µs
■ Low clamping voltage: V
■ Ultra low leakage current: IRM < 1 nA
■ ESD protection of up to 23 kV
■ IEC 61000-4-2, level 4 (ESD)
■ IEC 61000-4-5 (surge); Ipp = 3 A at tp = 8/20 µs
■ Small SMD plastic package
= 40 V at Ipp = 1 A
(CL)R
1.3 Applications
■ CAN bus protection
■ Automotive applications
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
C
RWM
d
reverse stand-off voltage - - 24 V
diode capacitance VR = 0 V;
f=1MHz
-11-pF
Philips Semiconductors
2. Pinning information
Table 2: Pinning
Pin Description Simplified outline Symbol
1 cathode 1
2 cathode 2
3 double cathode
3. Ordering information
Table 3: Ordering information
Type number Package
PESD1CAN - plastic surface mounted package; 3 leads SOT23
PESD1CAN
CAN bus ESD protection diode in SOT23
3
12
SOT23
Name Description Version
1
2
006aaa155
3
4. Marking
Table 4: Marking codes
Type number Marking code
PESD1CAN *AN
[1] * = p: made in Hong Kong
* = t: made in Hong Kong
* = W: made in China
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
pp
I
pp
T
j
T
amb
T
stg
[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see
Figure 1.
[2] Measured from pin 1 to 3 or 2 to 3.
[1]
peak pulse power 8/20 µs
peak pulse current 8/20 µs
[1] [2]
- 200 W
[1] [2]
-3A
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
9397 750 14197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Objective data sheet Rev. 01 — 25 January 2005 2 of 12
Philips Semiconductors
Table 6: ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
ESD electrostatic discharge
[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
[2] Measured from pin 1 to 3 or 2 to 3.
Table 7: ESD standards compliance
ESD Standard Conditions
IEC 61000-4-2, level 4 (ESD); see
HBM MIL-STD883, class 3 > 4 kV
120
I
(%)
pp
100 % Ipp; 8 µs
capability
001aaa630
PESD1CAN
CAN bus ESD protection diode in SOT23
[1] [2]
IEC 61000-4-2
(contact discharge)
HBM MIL-STD883 - 10 kV
Figure 2 > 15 kV (air); > 8 kV (contact)
I
pp
100 %
90 %
-23kV
001aaa631
80
40
0
0403010 20
−t
e
; 20 µs
50 % I
pp
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
10 %
tr = 0.7 to 1 ns
30 ns
60 ns
t
Fig 2. ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2
9397 750 14197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Objective data sheet Rev. 01 — 25 January 2005 3 of 12
Philips Semiconductors
PESD1CAN
CAN bus ESD protection diode in SOT23
6. Characteristics
Table 8: Characteristics
T
= 25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
I
RM
V
(BR)
C
d
V
(CL)R
r
dif
[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1.
[2] Measured from pin 1 to 3 or 2 to 3.
reverse stand-off voltage - - 24 V
reverse leakage current V
= 24 V - < 1 50 nA
RWM
breakdown voltage IR = 5 mA 25.4 27.8 30.3 V
diode capacitance VR = 0 V; f = 1 MHz;
see
Figure 5
clamping voltage IPP = 1 A
= 3 A
I
PP
-11-pF
[1] [2]
--40V
[1] [2]
--70V
differential resistance IR = 1 mA - - 300 Ω
9397 750 14197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Objective data sheet Rev. 01 — 25 January 2005 4 of 12
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