Philips PEMX1 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D744
PEMX1
NPN general purpose double
transistor
Product specification
Supersedes data of 2001 Aug 30
2001 Nov 07
Philips Semiconductors Product specification
NPN general purpose double transistor PEMX1
FEATURES
• 300 mW total power dissipation
• Very small 1.6 mm x 1.2 mm ultra thin package
• Excellent coplanarity due to straight leads
• Replaces two SC-75/SC-89 packaged transistors on
same PCB area
• Reduced required PCB area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN double transistor pair in a SOT666 plastic package.
PNP complement: PEMT1.
MARKING
TYPE NUMBER MARKING CODE
PEMX1 ZZ
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
Top view
5
46
123
MAM447
645
TR1
132
Fig.1 Simplified outline (SOT666) and symbol.
TR2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
2001 Nov 07 2
Philips Semiconductors Product specification
NPN general purpose double transistor PEMX1
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient notes 1 and 2 416 K/W
collector-base cut-off current VCB= 30 V; IE=0 − 100 nA
= 30 V; IE= 0; Tj= 150 °C − 10 µA
V
CB
emitter-base cut-off current VEB=4V; IC=0 − 100 nA
DC current gain VCE=6V; IC=1mA 120 −
collector-emitter saturation
IC= 50 mA; IB= 5 mA; note 1 − 200 mV
voltage
collector capacitance VCB= 12 V; IE=Ie= 0; f = 1MHz − 1.5 pF
transition frequency IC= 2 mA; VCE= 12 V; f = 100 MHz 100 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2001 Nov 07 3
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