Philips PEMH13 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D744
PEMH13
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2=47kΩ
Preliminary specification 2001 Dec 13
Philips Semiconductors Preliminary specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
FEATURES
• 300 mW total power dissipation
• Very small 1.6 × 1.2 mm ultra thin package
• Improved thermal behaviour due to flat leads
• Self alignment during soldering due to straight leads
• Replaces two SC-75/SC-89 packaged transistors on
same PCB area
• Reduces required PCB area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
DESCRIPTION
NPN resistor-equipped transistors in a SOT666 plastic
package.
MARKING
TYPE NUMBER MARKING CODE
PEMH13 21
PEMH13
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
CM
TR1 NPN −−
TR2 NPN −−
R1 bias resistor 4.7 kΩ
R2 bias resistor 47 kΩ
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
Top view
collector-emitter voltage 50 V
peak collector current 100 mA
465
123
MHC049
654
R1 R2
TR1
R2
R1
123
TR2
2001 Dec 13 2
Fig.1 Simplified outline (SOT666) and symbol.
2, 5
1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
Philips Semiconductors Preliminary specification
NPN resistor-equipped transistors;
PEMH13
R1 = 4.7 kΩ, R2=47kΩ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
V
CEO
V
EBO
V
i
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage
positive − +30 V
negative −−5V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
notes 1 and 2 416 K/W
ambient
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Dec 13 3
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