Philips PEMH11 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D744
PEMH11
NPN resistor-equipped transistors;
R1=10kΩ, R2=10kΩ
Preliminary specification 2001 Oct 22
Philips Semiconductors Preliminary specification
NPN resistor-equipped transistors;
R1=10kΩ, R2 = 10 kΩ
FEATURES
• 300 mW total power dissipation
• Very small 1.6 × 1.2 mm ultra thin package
• Self alignment during soldering due to straight leads
• Replaces two SC-75/SC-89 packaged transistors on
same PCB area
• Reduces required PCB area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
DESCRIPTION
NPN resistor-equipped transistors in a SOT666 plastic
package.
PEMH11
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
CM
TR1 NPN −−
TR2 NPN −−
R1 bias resistor 10 kΩ
R2 bias resistor 10 kΩ
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
collector-emitter voltage 50 V
peak collector current 100 mA
465
654
MARKING
TYPE NUMBER MARKING CODE
PEMH11 H1
R1 R2
TR1
R2
R1
123
Top view
MHC049
123
Fig.1 Simplified outline (SOT666) and symbol.
2, 5
1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
TR2
2001 Oct 22 2
Philips Semiconductors Preliminary specification
NPN resistor-equipped transistors;
PEMH11
R1=10kΩ, R2 = 10 kΩ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
V
CEO
V
EBO
V
i
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage
positive − +40 V
negative −−10 V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
notes 1 and 2 416 K/W
ambient
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Oct 22 3
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