Philips PEMD9 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D744
PEMD9
NPN/PNP resistor-equipped
transistors;
R1=10kΩ, R2=47kΩ
Preliminary specification 2001 Oct 22
Philips Semiconductors Preliminary specification
NPN/PNP resistor-equipped transistors;
R1=10kΩ, R2 = 47 kΩ
FEATURES
• 300 mW total power dissipation
• Very small 1.6 × 1.2 mm ultra thin package
• Self alignment during soldering due to straight leads
• Replaces two SC-75/SC-89 packaged transistors on
same PCB area
• Reduces required PCB area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
DESCRIPTION
NPN/PNP resistor-equipped transistors in a SOT666
plastic package.
PEMD9
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
CM
TR1 NPN −−
TR2 PNP −−
R1 bias resistor 10 kΩ
R2 bias resistor 47 kΩ
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
collector-emitter voltage 50 V
peak collector current 100 mA
5
46
654
MARKING
TYPE NUMBER MARKING CODE
PEMD9 D9
R1 R2
TR1
R2
R1
123
Top view
MAM448
123
Fig.1 Simplified outline (SOT666) and symbol.
2, 5
1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
TR2
2001 Oct 22 2
Philips Semiconductors Preliminary specification
NPN/PNP resistor-equipped transistors;
PEMD9
R1=10kΩ, R2 = 47 kΩ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
V
i
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage TR1
positive − +40 V
negative −−6V
input voltage TR2
positive − +6 V
negative −−40 V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
notes 1 and 2 416 K/W
ambient
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Oct 22 3
Philips Semiconductors Preliminary specification
NPN/PNP resistor-equipped transistors;
PEMD9
R1=10kΩ, R2 = 47 kΩ
CHARACTERISTICS
T
=25°C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1 input resistor 7 10 13 kΩ
R2
------- R1
C
c
collector-base cut-off current VCB=50V; IE=0 −−100 nA
collector-emitter cut-off current VCE=50V; IB=0 −−1µA
V
=30V; IB= 0; Tj= 150 °C −−50 µA
CE
emitter-base cut-off current VEB=5V; IC=0 −−150 µA
DC current gain VCE=5V; IC=5mA 100 −−
collector-emitter saturation voltage IC= 5 mA; IB= 0.25 mA −−100 mV
input off voltage VCE=5V; IC= 100 µA − 0.7 0.5 V
input on voltage VCE= 0.3 V; IC= 1 mA 1.4 0.8 − V
resistor ratio 3.7 4.7 5.7
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz
TR1 (NPN) −−2.5 pF
TR2 (PNP) −−3pF
2001 Oct 22 4
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