Philips PEMD6 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D744

PEMD6

NPN/PNP resistor-equipped
transistors;
R1 = 4.7 kΩ, R2 = open

Product specification
Supersedes data of 2001 Oct 22

2001 Nov 07

Philips Semiconductors Product specification

NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open

FEATURES

• 300 mW total power dissipation

• Very small 1.6 × 1.2 mm ultra thin package

• Self alignment during soldering due to straight leads

• Replaces two SC-75/SC-89 packaged transistors on

same PCB area

• Reduces required PCB area

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

DESCRIPTION

NPN/PNP resistor-equipped transistors in a SOT666
plastic package.

PEMD6

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V

CEO

I

CM

TR1 NPN −−
TR2 PNP −−
R1 bias resistor 4.7 kΩ
R2 open −−

PINNING

PIN DESCRIPTION

1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2

handbook, halfpage

collector-emitter voltage 50 V
peak collector current 100 mA

465

654

MARKING

TYPE NUMBER MARKING CODE

PEMD6 D6

R1

TR1

R1

123

Top view

MHC028

123

Fig.1 Simplified outline (SOT666) and symbol.

2, 5

1, 4

MBK120

6, 3

Fig.2 Equivalent inverter symbol.

TR2

2001 Nov 07 2

Philips Semiconductors Product specification

NPN/PNP resistor-equipped transistors;

PEMD6

R1 = 4.7 kΩ, R2 = open

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

V

CBO

V

CEO

V

EBO

V

i

I

O

I

CM

P

tot

T

stg

T

j

T

amb

Per device

P

tot

collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage TR1

positive − +40 V
negative −−10 V

input voltage TR2

positive − +10 V

negative −−40 V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T

≤ 25 °C; note 1 − 200 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

total power dissipation T

≤ 25 °C; note 1 − 300 mW

amb

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to

notes 1 and 2 416 K/W

ambient

Notes

1. Transistor mounted on an FR4 printed-circuit board.

2. The only recommended soldering method is reflow soldering.

2001 Nov 07 3