Philips PEMD6 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
M3D744
PEMD6
NPN/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = open
Product specification Supersedes data of 2001 Oct 22
2001 Nov 07
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES

300 mW total power dissipation
Very small 1.6 × 1.2 mm ultra thin package
Self alignment during soldering due to straight leads
Replaces two SC-75/SC-89 packaged transistors on
same PCB area
Reduces required PCB area
Reduced pick and place costs.

APPLICATIONS

General purpose switching and amplification
Inverter and interface circuits
Circuit driver.

DESCRIPTION

NPN/PNP resistor-equipped transistors in a SOT666 plastic package.
PEMD6

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT
V
CEO
I
CM
TR1 NPN −− TR2 PNP −− R1 bias resistor 4.7 k R2 open −−

PINNING

PIN DESCRIPTION
1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2
handbook, halfpage
collector-emitter voltage 50 V peak collector current 100 mA
465
654

MARKING

TYPE NUMBER MARKING CODE
PEMD6 D6
R1
TR1
R1
123
Top view
MHC028
123
Fig.1 Simplified outline (SOT666) and symbol.
2, 5
1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
TR2
2001 Nov 07 2
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors;
PEMD6
R1 = 4.7 kΩ, R2 = open

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
V
i
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
collector-base voltage open emitter 50 V collector-emitter voltage open base 50 V emitter-base voltage open collector 10 V input voltage TR1
positive +40 V negative −−10 V
input voltage TR2
positive +10 V
negative −−40 V output current (DC) 100 mA peak collector current 100 mA total power dissipation T
25 °C; note 1 200 mW
amb
storage temperature 65 +150 °C junction temperature 150 °C operating ambient temperature 65 +150 °C
total power dissipation T
25 °C; note 1 300 mW
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
notes 1 and 2 416 K/W
ambient
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Nov 07 3
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