Philips PEMD10 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D744

PEMD10

NPN/PNP resistor-equipped
transistors;
R1 = 2.2 kΩ, R2=47kΩ

Preliminary specification 2001 Sep 11

Philips Semiconductors Preliminary specification

NPN/PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ

FEATURES

• 300 mW total power dissipation

• Very small 1.6 × 1.2 mm ultra thin package

• Excellent coplanarity due to straight leads

• Replaces two SC-75/SC-89 packaged transistors on

same PCB area

• Reduces required PCB area

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

DESCRIPTION

NPN/PNP resistor-equipped transistors in a SOT666
plastic package.

MARKING

PEMD10

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V

CEO

I

CM

R1 bias resistor 2.2 kΩ
R2 bias resistor 47 kΩ

PINNING

PIN SYMBOL DESCRIPTION

1, 4 TR1; TR2 emitter
2, 5 TR1; TR2 base
6, 3 TR1; TR2 collector

handbook, halfpage

collector-emitter voltage 50 V
peak collector current 100 mA

5

46

654

R1 R2

TR1

R2

TR2

R1

TYPE NUMBER MARKING CODE

PEMD10 D1

123

Top view

MAM448

123

Fig.1 Simplified outline (SOT666) and symbol.

2, 5

1, 4

MBK120

6, 3

Fig.2 Equivalent inverter symbol.

2001 Sep 11 2

Philips Semiconductors Preliminary specification

NPN/PNP resistor-equipped transistors;

PEMD10

R1 = 2.2 kΩ, R2=47kΩ

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

V

CBO

V

CEO

V

EBO

V

I

I

O

I

CM

P

tot

T

stg

T

j

T

amb

Per device

P

tot

collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage TR1

positive − +12 V
negative −−5V

input voltage TR2

positive − +5 V

negative −−12 V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T

≤ 25 °C; note 1 − 200 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

total power dissipation T

≤ 25 °C; note 1 − 300 mW

amb

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to

notes 1 and 2 416 K/W

ambient

Notes

1. Transistor mounted on an FR4 printed-circuit board.

2. The only recommended soldering method is reflow soldering.

2001 Sep 11 3