Philips PEMB4 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D744
PEMB4
PNP resistor-equipped double
transistor R1 = 10 kΩ, R2 = open
Preliminary specification 2001 Sep 14
Philips Semiconductors Preliminary specification
PNP resistor-equipped double transistor
R1=10kΩ, R2 = open
FEATURES
• 300 mW total power dissipation
• Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin
package
• Excellent coplanarity due to straight leads
• Reduces numberofcomponents as replacement of two
SC-75/SC-89 packaged transistors
• Reduces required board space
• Reduces pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
DESCRIPTION
PNP resistor-equipped double transistor in a SOT666
plastic package.
PEMB4
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
CM
TR1 PNP −−
TR2 PNP −−
R1 bias resistor 10 kΩ
handbook, halfpage
Top view
collector-emitter voltage −50 V
peak collector current −100 mA
465
123
MAM452
654
TR1
R1
123
R1
TR2
MARKING
TYPE NUMBER MARKING CODE
PEMB4 B4
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
Fig.1 Simplified outline (SOT666) and symbol.
2, 5
1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
2001 Sep 14 2
Philips Semiconductors Preliminary specification
PNP resistor-equipped double transistor
PEMB4
R1=10kΩ, R2 = open
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−5V
output current (DC) −−100 mA
peak collector current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient notes 1 and 2 416 K/W
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
I
CBO
I
CEO
I
EBO
h
V
FE
CEsat
collector cut-off current IE= 0; VCB= −50 V −−−100 nA
collector cut-off current IB= 0; VCE= −50 V −−−1µA
I
= 0; VCE= −30 V; Tj= 150 °C −−−50 µA
B
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −1 mA; VCE= −5 V 100 − 600
collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−−300 mV
R1 input resistor 7 10 13 kΩ
C
c
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz −−5pF
2001 Sep 14 3
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