Philips PEMB2 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
M3D744
PEMB2
PNP resistor-equipped double transistor R1 = 47 k,R2=47k
Product specification 2001 Sep 14
PNP resistor-equipped double transistor R1=47kΩ, R2 = 47 k

FEATURES

300 mW total power dissipation
Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin
package
Excellent coplanarity due to straight leads
Reduces numberofcomponents as replacement of two
SC-75/SC-89 packaged transistors
Reduces required board space
Reduces pick and place costs.

APPLICATIONS

General purpose switching and amplification
Inverter and interface circuits
Circuit driver.

DESCRIPTION

PNP resistor-equipped double transistor in a SOT666 plastic package.
PEMB2
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
CM
TR1 PNP −− TR2 PNP −− R1 bias resistor 47 k R2 bias resistor 47 k
handbook, halfpage
Top view
collector-emitter voltage 50 V peak collector current 100 mA
465
123
MAM451
654
R1 R2
TR1
R2
R1
123
TR2

MARKING

TYPE NUMBER MARKING CODE
PEMB2 B2

PINNING

PIN DESCRIPTION
1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 3, 6 collector TR1; TR2
Fig.1 Simplified outline (SOT666) and symbol.
2, 5
1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
2001 Sep 14 2
PNP resistor-equipped double transistor
PEMB2
R1=47kΩ,R2=47k

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
V
CEO
V
EBO
V
I
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
collector-base voltage open emitter −−50 V collector-emitter voltage open base −−50 V emitter-base voltage open collector −−10 V input voltage
positive +10 V
negative −−40 V output current (DC) −−100 mA peak collector current −−100 mA total power dissipation T
25 °C; note 1 200 mW
amb
storage temperature 65 +150 °C junction temperature 150 °C operating ambient temperature 65 +150 °C
total power dissipation T
25 °C; note 1 300 mW
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
2001 Sep 14 3
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