Philips PEMB14, PUMB14 User Manual
查询PEMB14供应商
PEMB14; PUMB14
PNP/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = open
Rev. 01 — 17 February 2005 Product data sheet
1. Product profile
1.1 General description
PNP/PNP resistor-equipped transistors.
Table 1: Product overview
Type number Package NPN/PNP
PEMB14 SOT666 - PEMD14 PEMH14
PUMB14 SOT363 SC-88 PUMD14 PUMH14
Philips JEITA
complement
NPN/NPN
complement
1.2 Features
■ Built-in bias resistors
■ Simplifies circuit design
■ Reduces component count
■ Reduces pick and place cost
1.3 Applications
■ Low current peripheral driver
■ Control of IC inputs
■ Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
O
R1 bias resistor 1 (input) 33 47 61 kΩ
collector-emitter voltage open base - - −50 V
output current (DC) - - −100 mA
Philips Semiconductors
2. Pinning information
Table 3: Pinning
Pin Description Simplified outline Symbol
1 GND (emitter) TR1
2 input (base) TR1
3 output (collector) TR2
4 GND (emitter) TR2
5 input (base) TR2
6 output (collector) TR1
3. Ordering information
Table 4: Ordering information
Type number Package
PEMB14 - plastic surface mounted package; 6 leads SOT666
PUMB14 SC-88 plastic surface mounted package; 6 leads SOT363
PEMB14; PUMB14
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open
6 45
1 32
001aab555
Name Description Version
654
R1
TR1
1
TR2
R1
23
006aaa268
4. Marking
Table 5: Marking codes
Type number Marking code
PEMB14 5A
PUMB14 T1*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
[1]
9397 750 14405 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 17 February 2005 2 of 10
Philips Semiconductors
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
PEMB14; PUMB14
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open
collector-base voltage open emitter - −50 V
collector-emitter voltage open base - −50 V
emitter-base voltage open collector - −5V
output current (DC) - −100 mA
peak collector current - −100 mA
total power dissipation T
SOT363
SOT666
storage temperature −65 +150 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C
total power dissipation T
SOT363
SOT666
amb
amb
≤ 25 °C
≤ 25 °C
[1]
- 200 mW
[1] [2]
- 200 mW
[1]
- 300 mW
[1] [2]
- 300 mW
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
Per device
R
th(j-a)
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
thermal resistance from
junction to ambient
SOT363
SOT666
thermal resistance from
junction to ambient
SOT363
SOT666
T
T
amb
amb
≤ 25 °C
≤ 25 °C
[1]
- - 625 K/W
[1] [2]
- - 625 K/W
[1]
- - 416 K/W
[1] [2]
- - 416 K/W
9397 750 14405 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 17 February 2005 3 of 10
Loading...