Philips PEMB14, PUMB14 User Manual

PEMB14

PEMB14; PUMB14

PNP/PNP resistor-equipped transistors;

R1 = 47 kΩ, R2 = open

Rev. 01 — 17 February 2005	Product data sheet

1.Product profile

1.1General description

PNP/PNP resistor-equipped transistors.

Table 1: Product overview

Type number	Package		NPN/PNP	NPN/NPN
	Philips	JEITA	complement	complement
PEMB14	SOT666	-	PEMD14	PEMH14
PUMB14	SOT363	SC-88	PUMD14	PUMH14

1.2Features

■Built-in bias resistors

■Simplifies circuit design

■Reduces component count

■Reduces pick and place cost

1.3Applications

■Low current peripheral driver

■Control of IC inputs

■Replacement of general-purpose transistors in digital applications

1.4Quick reference data

Table 2:	Quick reference data
Symbol	Parameter	Conditions	Min	Typ		Max		Unit
VCEO	collector-emitter voltage	open base	-	-		−50		V
IO	output current (DC)		-	-		−100		mA
R1	bias resistor 1 (input)		33	47		61		kΩ

Philips Semiconductors			PEMB14; PUMB14
			PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open

2. Pinning information

Table 3:	Pinning
Pin	Description	Simplified outline	Symbol
1	GND (emitter) TR1

2	input (base) TR1
3	output (collector) TR2
4	GND (emitter) TR2
5	input (base) TR2
6	output (collector) TR1

6

5

4

6

5

4

R1

TR2

TR1

1 2 3

R1

001aab555

1 2 3

006aaa268

3. Ordering information

Table 4: Ordering information

Type number	Package
	Name	Description	Version
PEMB14	-	plastic surface mounted package; 6 leads	SOT666
PUMB14	SC-88	plastic surface mounted package; 6 leads	SOT363

4. Marking

Table 5: Marking codes

Type number	Marking code	[1]
PEMB14	5A
PUMB14	T1*

[1]* = -: made in Hong Kong

*= p: made in Hong Kong

*= t: made in Malaysia

*= W: made in China

9397 750 14405

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 01 — 17 February 2005

2 of 10

Philips Semiconductors			PEMB14; PUMB14
			PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open
5. Limiting values
		Table 6:	Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions				Min	Max	Unit
Per transistor
VCBO	collector-base voltage	open emitter				-	−50	V
VCEO	collector-emitter voltage	open base				-	−50	V
VEBO	emitter-base voltage	open collector				-	−5	V
IO	output current (DC)					-	−100	mA
ICM	peak collector current					-	−100	mA
Ptot	total power dissipation	Tamb ≤ 25 °C
	SOT363				[1]	-	200	mW
	SOT666	[1]			[2]	-	200	mW
Tstg	storage temperature					−65	+150	°C
Tj	junction temperature					-	150	°C
Tamb	ambient temperature					−65	+150	°C
Per device
Ptot	total power dissipation	Tamb ≤ 25 °C
	SOT363				[1]	-	300	mW
	SOT666	[1]			[2]	-	300	mW

[1]Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[2]Reflow soldering is the only recommended soldering method.

6.Thermal characteristics

Table 7:	Thermal characteristics
Symbol		Parameter	Conditions				Min	Typ	Max	Unit
Per transistor
Rth(j-a)		thermal resistance from	Tamb ≤ 25 °C
		junction to ambient
		SOT363				[1]	-	-	625	K/W
		SOT666	[1]			[2]	-	-	625	K/W
Per device
Rth(j-a)		thermal resistance from	Tamb ≤ 25 °C
		junction to ambient
		SOT363				[1]	-	-	416	K/W
		SOT666	[1]			[2]	-	-	416	K/W

[1]Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[2]Reflow soldering is the only recommended soldering method.

9397 750 14405

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 01 — 17 February 2005

3 of 10