Philips PDZ-B Technical data
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ook, halfpage
M3D049
PDZ-B series
Voltage regulator diodes
Product specification
Supersedes data of 1998 Apr 23
2002 Feb 18
Philips Semiconductors Product specification
Voltage regulator diodes PDZ-B series
FEATURES
• Total power dissipation: max. 400 mW
• Small plastic package suitable for surface mounted
design
PINNING
PIN DESCRIPTION
1 cathode
2 anode
• Wide variety of voltage ranges: nom. 2.4 to 36 V
(E24 range)
• Tolerance approximately ±2%.
handbook, halfpage
APPLICATIONS
12
• General voltage regulation.
Top view
MAM387
DESCRIPTION
Low-power general purpose voltage regulator diodes in a
Fig.1 Simplified outline (SOD323) and symbol.
small plastic SMD SOD323 package.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
PDZ2.4B Z0 PDZ5.1B Z8 PDZ11B ZG PDZ24B ZQ
PDZ2.7B Z1 PDZ5.6B Z9 PDZ12B ZH PDZ27B ZR
PDZ3.0B Z2 PDZ6.2B ZA PDZ13B ZJ PDZ30B ZS
PDZ3.3B Z3 PDZ6.8B ZB PDZ15B ZK PDZ33B ZT
PDZ3.6B Z4 PDZ7.5B ZC PDZ16B ZL PDZ36B ZU
PDZ3.9B Z5 PDZ8.2B ZD PDZ18B ZM
PDZ4.3B Z6 PDZ9.1B ZE PDZ20B ZN
PDZ4.7B Z7 PDZ10B ZF PDZ22B ZP
MARKING
CODE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
tot
continuous forward current − 200 mA
non-repetitive peak reverse current tp= 100 µs; square wave;
T
=25°C prior to surge
amb
total power dissipation T
=25°C; note 1;
amb
− 400 mW
see Table 2
see Fig.2
T
stg
T
j
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
2002 Feb 18 2
Philips Semiconductors Product specification
Voltage regulator diodes PDZ-B series
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
R
th j-a
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
CHARACTERISTICS
Table 1 Total series
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
thermal resistance from junction to soldering point 130 K/W
thermal resistance from junction to ambient note 1 340 K/W
forward voltage IF= 10 mA; see Fig.3 0.9 V
= 100 mA; see Fig.3 1.1 V
I
F
reverse current
PDZ2.4B V
PDZ2.7B V
PDZ3.0B V
PDZ3.3B V
PDZ3.6B V
PDZ3.9B V
PDZ4.3B V
PDZ4.7B V
PDZ5.1B V
PDZ5.6B V
PDZ6.2B V
PDZ6.8B V
PDZ7.5B V
PDZ8.2B V
PDZ9.1B V
PDZ10B V
PDZ11B V
PDZ12B V
PDZ13B V
PDZ15B V
PDZ16B V
PDZ18B V
PDZ20B V
PDZ22B V
PDZ24B V
PDZ27B V
PDZ30B V
PDZ33B V
PDZ36B V
=1V 50 µA
R
=1V 20 µA
R
=1V 10 µA
R
=1V 5 µA
R
=1V 5 µA
R
=1V 3 µA
R
=1V 3 µA
R
=1V 2 µA
R
= 1.5 V 2 µA
R
= 2.5 V 1 µA
R
= 3 V 500 nA
R
= 3.5 V 500 nA
R
= 4 V 500 nA
R
= 5 V 500 nA
R
= 6 V 500 nA
R
= 7 V 100 nA
R
= 8 V 100 nA
R
= 9 V 100 nA
R
= 10 V 100 nA
R
= 11 V 50 nA
R
= 12 V 50 nA
R
= 13 V 50 nA
R
= 15 V 50 nA
R
= 17 V 50 nA
R
= 19 V 50 nA
R
= 21 V 50 nA
R
= 23 V 50 nA
R
= 25 V 50 nA
R
= 27 V 50 nA
R
2002 Feb 18 3
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